Diodes DMN10H120SFG User Manual

YYW

W

DMN10H120SFG

100V N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

Product Summary

I

max

D

3.4 A

3.2 A

V

(BR)DSS

100V

R

110m @ V

122m @ VGS = 6.0V

DS(ON)

max

GS

TA = +25°C

= 10V

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

ADVANCE INFORMATION

 Power Management Functions
 DC-DC Converters

Top View

POWERDI3333-8

D

D

D

D

Bottom View

Features and Benefits

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram

Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Pin 1

S

S

S

G

1

2

3

4

Top View

Internal Schematic

8

7

6

5

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMN10H120SFG-7 Standard POWERDI3333-8 2000/Tape & Reel

DMN10H120SFG-13 Standard POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMN10H120SFG

Document number: DS36250 Rev. 1 - 2

N10

N10 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)

1 of 6

www.diodes.com

December 2013

© Diodes Incorporated

)

g

g

g

)

r

)

DMN10H120SFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 6V

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Steady

State

t<10s

Steady

State

t<10s

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

100 V
±20 V

3.4

2.6

4.8

3.7

3.2

2.5

4.6

3.6

A

A

A

A

20 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 76

= +25°C

T

A

TA = +70°C

Steady state

t<10s 28

P

R

P

R

R

T

J, TSTG

JA

JA

JC

D

D

1.0

0.6

131

2.3

1.2

W

°C/W

W

55

°C/W

6.9

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

100 - - V

- - 1.0 A

- - ±100 nA

VGS = 0V, ID = 250 A
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

1.5 2.0 3.0 V

- 68 110

- 75 122

|

- 13 - S

- 0.78 - V

VDS = VGS, ID = 250A
V

= 10V, ID = 3.3A

m

GS

V

= 6.0V, ID = 3.0A

GS

VDS = 10V, ID = 3.3A
VGS = 0V, IS = 3.2A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge VGS = 10V Qg
Total Gate Charge VGS = 4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

POWERDI is a registered trademark of Diodes Incorporated

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMN10H120SFG

Document number: DS36250 Rev. 1 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 549 - pF

- 41.1 - pF

- 19.0 - pF

- 1.6 - 

- 10.6 - nC

- 5.2 - nC

- 2.3 - nC

- 2.6 - nC

- 3.8 - ns

- 1.8 - ns

- 11.5 - ns

- 2.5 - ns

2 of 6

= 50V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 50V, ID = 3.3A

DS

= 10V, VDS = 50V,

V

GS

R

= 6.0, ID = 3.3A

G

December 2013

© Diodes Incorporated