Diodes DMN1033UCB4 User Manual

Product Summary

V

R

SSS

12V 26mΩ @ VGS = 4.5V 5.5 A

SS(ON)

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power

management applications.

and yet maintain superior switching

SS(ON))

Applications

 Battery Management

 Load Switch

 Battery Protection

NEW PRODUCT

I

S

TA = +25°C

DMN1033UCB4

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Features and Benefits

 Built-in G-S protection diode against ESD 2kV HBM.
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-WLB1818-4

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Weight: 0.005 grams (approximate)

ESD PROTECTED TO 2kV

Top View

G1

S1

Equivalent Circuit

G2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMN1033UCB4-7 U-WLB1818-4 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

September 2013

© Diodes Incorporated

Maximum Ratings

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Source Current @

= 4.5V TA = +25°C (Note 5)

V

GS

Steady

State

T

= +25°C

A

= +70°C

T

A

V

SSS

V

GSS

I

S

Pulsed Source Current @ TA = +25°C (Notes 5 & 6) ISM

12 V

6

5.5

4.5

20 A

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation, @TA = +25°C (Note 5) PD

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

Operating and Storage Temperature Range

R



T

, T

J

JA

STG

1.45 W

88.21 °C/W

-55 to +150 °C

NEW PRODUCT

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Source to Source Breakdown Voltage TJ = +25°C V

Zero Gate Voltage Source Current TJ = +25°C I

Gate-Body Leakage

(BR)SS

SSS

I

GSS

12 — — V

— — 1.0 µA

— —

10

µA

IS = 1mA, VGS = V

V

= 12V, VGS = 0V

SS

VGS = 6V, V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Source -Source On-Resistance

Forward Transfer Admittance

Body Diode Forward Voltage

V

R

SS(ON)

|Y

V

GS(th)

F(S-S)

0.35 0.5 0.7 V

19.5

20

20.5

21.5

21

—

22
26

35

— 11 — S

|

fs

— 0.7 1.0 V

26

27
28
29
30

31
33

50

mΩ

VSS = 10V, IS = 1.0mA

= 4.5V, IS = 3.0A

V

GS

= 4.0V, IS = 3.0A

V

GS

= 3.7V, IS = 3.0A

V

GS

= 3.5V, IS = 3.0A

V

GS

V

= 3.1V, IS = 3.0A

GS

= 2.5V, IS = 3.0A

V

GS

= 1.8V, IS = 3.0A

V

GS

= 1.5V, IS = 3.0A

V

GS

VSS = 10V, IS = 3.0A

IF = 3.0 A, VGS = 0 V,

DYNAMIC CHARACTERISTICS (Note 8)

Total Gate Charge

Turn-On Delay Time

Q

t

D(on)

g

Turn-On Rise Time tr —20 — ns

Turn-Off Delay Time

t

D(off)

— 37 — nC

— 10 — ns

— 83 — ns

VGS = 4.5V, VSS = 10V, IS = 6A

V

= 6V,

DD

= 6.0Ω, IS = 3.0A

R

L

Turn-Off Fall Time tf —52 — ns

Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

2 of 6

www.diodes.com

DMN1033UCB4

V

A

= 0V

DS

September 2013

© Diodes Incorporated

R

CUR

R

T

R

CUR

R

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN-SOUR

CE O

N-R

N

C

R

R

OUR

C

R

R

OUR

C

O

R

TANC

NEW PRODUCT

DMN1033UCB4



E ( )

ESIS

0.06

0.05

0.04

0.03

12.0

V= 6.0V

10.0

(A)

EN

8.0

6.0

GS

V= 2.0V

GS

V= 1.2V

V= 4.5V

GS

V= 4.0V

GS

V= 1.5V

GS

GS

AIN

4.0

V= 1.0V

D

I, D

GS

2.0

0.0
0 0.5 1 1.5 2 2.5 3

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

V = 1.5VGS

V = 1.8VGS

V = 4.5VGS

V= 0.9V

GS



E ( )

ESISTA

20

V = 5.0VDS

16

12

ENT (A)

T = 150°C

A

8

AIN

T = 125°C

D

I, D

4

0

0 0.3 0.6 0.9 1.2 1.5

V , GATE-SOURCE VOLTAGE (V)

A

GS

Figure 2 Typical Transfer Characteristics

0.035

V = 4.5VGS

0.03

T = 125°C

A

0.025

0.02

T = 25°C

T = 85°C

T = 25°C

A

T = -55°C

A

T = 150°C

A

T = 85°C

A

A

A

0.02

, D

0.01

V = 6.0VGS

, D

0.015

T = -55°C

A

DS(ON)

0

024681012

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage

1.6

V= V

1.8

1.4

E

GS

I= 4.0A

D

1.2

AIN-S

, D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Figure 5 On-Resistance Variation with Temperature

DS(ON)

0.01
024681012

I , DRAIN CURRENT (A)

Figure 4 Typical On-Resistance vs. Drain Current and Temperature

D

0.05



E ( )

0.045

0.04

ESIS

0.035

N-

E

0.03

V= V

1.8

GS

I = 4.0A

D

AIN-S

0.025

0.02

, D

0.015

DS(ON)

0.01

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J



DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

3 of 6

www.diodes.com

September 2013

© Diodes Incorporated

G

H

RESH

O

O

G

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

GE CUR

RENT

R

CUR

RENT

NEW PRODUCT

0.8

0.7

E (V)

0.6

LTA

I= 1mA

0.5

LD V

0.4

I= 250µA

D

D

0.3

ATE T

0.2

0.1

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10000

DMN1033UCB4

12

10

(A)

8

T = 25°C

6

4

S

I, S

2

0

0 0.2 0.4 0.6 0.8 1



V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

10000

A

1.2 1.4

SD

E (pF)

C

iss

(nA)

T = 150°C

100

A

T = 125°C

A

1000

1000

10

1

GSS

I , LEAKA

0.1
12

T = 85°C

A

T = 25°C

A

3

V , GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

4

Figure 10 Gate-Source Leakage Current vs. Voltage

56

, J

f = 1MHz

T

100

0 2 4 6 8 10 12

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

100

R

DS(on)

Limited

C

oss

C

rss

P = 100sWµ

10

(A)

1

AIN

D

0.1

I, D

T = 150°C

J(max)

T = 25°C

A

Single Pulse
DUT on 1 * MRP Board
V = 6V

GS

0.01

0.01 0.1 1 10 100

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 SOA, Safe Operation Area

DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

4 of 6

www.diodes.com

September 2013

© Diodes Incorporated

T

R

T T

HER

R

TANC

DMN1033UCB4

1

D = 0.9
D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R



JA JA

R = 156°C/W



JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 12 Transient Thermal Resistance

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

PIN ID

A

B

D

SEATING
PLANE

e

21

E

A

2

A

B

A

6x-Øb

21

e

U-WLB1818-4

Dim Min Max Typ

A

A2

0.62


 



0.36

b 0.25 0.35 0.30
D 1.75 1.80 1.79
E 1.75 1.80 1.79
e

 

0.65

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

D

︵4

x

︶

A

C

21

Dimensions

C

C 0.65

Value

(in mm)

D 0.30

B

5 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN1033UCB4

DMN1033UCB4

Document number: DS36264 Rev. 2 - 2

6 of 6

www.diodes.com

September 2013

© Diodes Incorporated