Diodes DMN1033UCB4 User Manual
Product Summary
V
R
SSS
12V 26mΩ @ VGS = 4.5V 5.5 A
SS(ON)
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power
management applications.
and yet maintain superior switching
SS(ON))
Applications
Battery Management
Load Switch
Battery Protection
NEW PRODUCT
I
S
TA = +25°C
DMN1033UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Features and Benefits
Built-in G-S protection diode against ESD 2kV HBM.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1818-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
ESD PROTECTED TO 2kV
Top View
G1
S1
Equivalent Circuit
G2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMN1033UCB4-7 U-WLB1818-4 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
1 of 6
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September 2013
© Diodes Incorporated
Maximum Ratings
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Source Current @
= 4.5V TA = +25°C (Note 5)
V
GS
Steady
State
T
= +25°C
A
= +70°C
T
A
V
SSS
V
GSS
I
S
Pulsed Source Current @ TA = +25°C (Notes 5 & 6) ISM
12 V
6
5.5
4.5
20 A
Thermal Characteristics
Characteristic Symbol Value Units
Power Dissipation, @TA = +25°C (Note 5) PD
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
R
T
, T
J
JA
STG
1.45 W
88.21 °C/W
-55 to +150 °C
NEW PRODUCT
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Source to Source Breakdown Voltage TJ = +25°C V
Zero Gate Voltage Source Current TJ = +25°C I
Gate-Body Leakage
(BR)SS
SSS
I
GSS
12 — — V
— — 1.0 µA
— —
10
µA
IS = 1mA, VGS = V
V
= 12V, VGS = 0V
SS
VGS = 6V, V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Source -Source On-Resistance
Forward Transfer Admittance
Body Diode Forward Voltage
V
R
SS(ON)
|Y
V
GS(th)
F(S-S)
0.35 0.5 0.7 V
19.5
20
20.5
21.5
21
—
22
26
35
— 11 — S
|
fs
— 0.7 1.0 V
26
27
28
29
30
31
33
50
mΩ
VSS = 10V, IS = 1.0mA
= 4.5V, IS = 3.0A
V
GS
= 4.0V, IS = 3.0A
V
GS
= 3.7V, IS = 3.0A
V
GS
= 3.5V, IS = 3.0A
V
GS
V
= 3.1V, IS = 3.0A
GS
= 2.5V, IS = 3.0A
V
GS
= 1.8V, IS = 3.0A
V
GS
= 1.5V, IS = 3.0A
V
GS
VSS = 10V, IS = 3.0A
IF = 3.0 A, VGS = 0 V,
DYNAMIC CHARACTERISTICS (Note 8)
Total Gate Charge
Turn-On Delay Time
Q
t
D(on)
g
Turn-On Rise Time tr —20 — ns
Turn-Off Delay Time
t
D(off)
— 37 — nC
— 10 — ns
— 83 — ns
VGS = 4.5V, VSS = 10V, IS = 6A
V
= 6V,
DD
= 6.0Ω, IS = 3.0A
R
L
Turn-Off Fall Time tf —52 — ns
Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
2 of 6
www.diodes.com
DMN1033UCB4
V
A
= 0V
DS
September 2013
© Diodes Incorporated
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