Diodes DMN1025UFDB User Manual
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Y
Product Summary
I
Device
N-Channel 12V
V
(BR)DSS
R
DS(ON) max
25m @ V
30m @ VGS = 2.5V
38m @ VGS = 1.8V
= 4.5V
GS
D MAX
TA = +25°C
6.9A
6.3A
5.5A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
ESD PROTECTED
Pin1
D2
U-DFN2020-6
T
D2
G1
S1
Bottom View
e B
S2
G2
D1
D1
DMN1025UFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
e4
D1
G1
Gate Protection
Diode
N-CHANNEL MOSFET N-CHANNEL MOSFET
S1
Internal Schematic
G2
Gate Protection
Diode
D2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMN1025UFDB-7 U-DFN2020-6 Type B 3000/Tape & Reel
DMN1025UFDB-13 U-DFN2020-6 Type B 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/quality/product_compliance_definitions/.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
N B
M
DMN1025UFDB
Document number: DS36668 Rev. 2 - 2
NB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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April 2014
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)
g
g
g
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Steady
Continuous Drain Current (Note 5) VGS = 4.5V
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
Steady State
Steady State
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
P
R
R
T
J, TSTG
JA
JC
D
t < 5s 2.9
t < 5s 43
12 V
±10 V
6.9
5.5
8.8
7.0
1 A
35 A
9.8 A
4.8 mJ
1.7
71
13
-55 to 150 °C
DMN1025UFDB
A
A
W
°C/W
Electrical Characteristics N-CHANNEL (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
12 — — V
— — 1.0 A
— — ±10 A
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th
0.4 — 1 V
— 18 25
Static Drain-Source On-Resistance
R
DS (ON)
— 20 30
m
— 25 38
Diode Forward Voltage
V
SD
— 0.7 1.2 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
g
s
d
f
—
—
—
—
—
—
—
—
—
—
—
—
917
120
102
11.4
12.6
23.1
1.3
1.6
3.0
9.3
17.2
2.8
— pF
— pF
— pF
—
— nC
— nC
— nC
— nC
— ns
— ns
— ns
— ns
Body Diode Reverse Recovery Time trr — 6.8 — nS
Body Diode Reverse Recovery Charge Qrr — 1.1 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
AS
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
VGS = 0V, ID = 250A
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250A
= 4.5V, ID = 5.2A
V
GS
V
= 2.5V, ID = 4.8A
GS
V
= 1.8V, ID = 2.5A
GS
VGS = 0V, IS = 5.4A
= 6V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 10V, ID = 6.8A
DS
V
= 6V, VGS = 4.5V,
DD
R
= 1.1, RG = 1
L
I
= 5.4A, dI/dt = 100A/s
S
I
= 5.4A, dI/dt = 100A/s
S
DMN1025UFDB
Document number: DS36668 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
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