Diodes DMN1019USN User Manual

Y

Product Summary

V

R

(BR)DSS

10mΩ @ V
12mΩ @ VGS = 2.5V

12V

14mΩ @ VGS = 1.8V
18mΩ @ VGS = 1.5V
41mΩ @ VGS = 1.2V

DS(ON) MAX

= 4.5V

GS

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Load Switch

NEW PRODUCT

• DC-DC Converters

• Power Management Functions

ESD PROTECTED

SC59

Top View

I

D

9.3A

8.5A

7.9A

6.9A

4.6A

DMN1019USN

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59

• Case Material – Molded Plastic. UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

• Terminal Connections: See Diagram

• Weight: 0.014 grams (approximate)

D

G

Top View

Pin Configuration

e3

D

G

S

Gate Protect ion

Diode

Equivalent Circuit

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN1019USN-7 SC59 3,000/Tape & Reel

DMN1019USN-13 SC59 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019 2020

Code A B C D E F G H

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N7

DMN1019USN

Document number: DS36999 Rev. 2 - 2

M

www.diodes.com

N7 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: A = 2013
M = Month ex: 9 = September

1 of 6

May 2014

© Diodes Incorporated

)

g

g

)

)

DMN1019USN

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

12 V
±8 V

9.3

7.4

11

8.8

A

A

70 A

2 A

Thermal Characteristics

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 115 °C/W

= +25°C

T

A

TA = +70°C

Steady state

t<10s 68 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

12 — — V

— — 1 µA
— — ±2 µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th

0.35 0.53 0.8 V
— 7 10

Static Drain-Source On-Resistance

R

DS(ON)

—
—
—

8 12
10 14
14 18

mΩ

— 28 41
Forward Transfer Admittance
Diode Forward Voltage

IYfsI
V

SD

— 28 — S

— 0.8 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C
C
C

oss

rss

Rg

iss

Total Gate Charge (VGS = 8V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s R

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN1019USN

Document number: DS36999 Rev. 2 - 2

Q

s

Q

d

t

D(ON

t

D(OFF

tr

tf

2 of 6

www.diodes.com

—
—
—
—
—
—
—
—
—
—
—
—

2426

396
375

1.1

50.6

27.3

3.4

5.2

7.6

22.2

57.6

16.8

— pF
— pF
— pF
— Ω
—
—
—

nC

—
— ns
— ns
— ns
— ns

D

0.68

0.4

160 °C/W

1.2

0.83
96 °C/W

18 °C/W

-55 to +150 °C

VGS = 0V, ID = 250µA
V

=12V, VGS = 0V

DS

VGS = ±8V, V

DS

= 0V

VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 9.7A
VGS = 2.5V, ID = 9A
VGS = 1.8V, ID = 8.1A
VGS = 1.5V, ID = 4.5A
VGS = 1.2V, ID = 2.4A
VDS = 4V, ID = 9.7A
VGS = 0V, IS = 10A

VDS = 10V, VGS = 0V,
f = 1MHz

V

= 0V, VGS = 0V, f = 1MHz

DS

V

= 4V, ID = 10A

DS

VDD = 4V, V

= 5V, ID = 10A,

GEN

RG = 1Ω, RL = 0.4Ω

.

is based on t<10s R

θJA

.

θJA

© Diodes Incorporated

W

W

May 2014