Diodes DMN1019UFDE User Manual

DMN1019UFDE

12V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

D max

TA = +25°C

11A

10 9A 8A 5A

(BR)DSS

12V

Package

DS(ON) max

10m @ V 12m @ VGS = 2.5V 14m @ VGS = 1.8V 18m @ VGS = 1.5V 41m @ VGS = 1.2V

= 4.5V

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

ADVANCE INFORMATION

Applications

 Load Switching

 Battery Management Application

 Power Management Functions

ESD PROTECTED

Pin1

U-DFN2020-6

Type E

Bottom View

Features

 0.6mm profile – ideal for low profile applications

 PCB footprint of 4mm2

 Low Gate Threshold Voltage

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6 Type E

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

GateProtection

Pin Out

Bottom View

Diode

Equivalent Circuit

Ordering Information

Part Number

DMN1019UFDE-7 N7 7 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

(Note 4)

Marking Reel size (inches)

Quantity per reel

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN1019UFDE

atasheet number: DS35561 Rev. 5 - 2

www.diodes.com

N7 = Product Type Marking Code YM = Date Code Marking

Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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

CUR

DMN1019UFDE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Continuous Body Diode Current Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Steady

State

t<5s

= +25°C

= +70°C

= +25°C

= +70°C

DSS

GSS

12 V ±8 V

14 11

3.0 A

100 A

Thermal Characteristics

Characteristic Symbol Value Units

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range

100

(W)

IWE

Single Pulse



R = 178 C/W



R = r * R



JA(t) (t) JA

T - T = P * R

JA JA(t)

DUT on MRP



ANSIEN

EAK ,

(PK)

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

DMN1019UFDE

atasheet number: DS35561 Rev. 5 - 2

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www.diodes.com

= +25°C

TA = +70°C

Steady state

t<5s

= +25°C

TA = +70°C Steady state

t<5s

100

(A)

AIN

I, D

0.1

0.01

0.01 0.1 1 10 100



J, TSTG

DS(on)

Limited

P = 10s

P = 1s

P = 100ms

P = 10ms

T = 150°C

J(max)

T = 25°C

Single Pulse DUT on 1 * MRP Board V = 8V

V , DRAIN-SOURCE VOLTAGE (V)

0.69

0.44

182 118

2.17

1.38

58 38

-55 to +150 °C

P = 1ms

P = 100µs

Fig. 2 SOA, Safe Operation Area

°C/W

P = 10sWµ

October 2013

)

T T

HER

TANC

DMN1019UFDE

D = 0.9 D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R = r * R



JA(t) (t)

R = 178 C/W

Duty Cycle, D = t1/t2

JA



t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Thermal Resistance

ADVANCE INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage

GSS

DSS

12 — —

— — — —

1 µA

±2 µA

VGS = 0V, ID = 250A VDS = 12V, VGS = 0V

VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

GS(th

DS (ON)

|Y V

0.35 — 0.8 V 7 10 8 12

—

10 14 14 18 28 41

—

28 — S

0.8 1.2 V

VDS = VGS, ID = 250A

= 4.5V, ID = 9.7A

= 2.5V, ID = 9A

m

= 1.8V, ID = 8.1A

= 1.5V, ID = 4.5A

= 1.2V, ID = 2.4A

VDS = 4V, ID = 9.7A

VGS = 0V, IS = 10A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

iss

oss

rss

R Total Gate Charge (VGS = 8V) Qg Total Gate Charge (VGS = 4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q Q

D(on

D(off

— 2425 — — 396 — — 375 — — 1.1 — — 50.6 — — 27.3 — — 3.4 — — 5.2 — — 7.6 — — 22.2 — — 57.6 — — 16.8 —

= 10V, VGS = 0V,

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

= 4V, ID = 10A

= 4V, VGS = 10V, ID = 10A

= 1, RL = 0.4

DMN1019UFDE

atasheet number: DS35561 Rev. 5 - 2

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www.diodes.com

October 2013

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