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p
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V
• High Drain Current: 1.1A
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• ESD Protected Gate
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED
SC59
Top View Equivalent Circuit
Mechanical Data
• Case: SC59
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
Drain
D
Gate
Gate
Protection
Diode
Source
To
SG
View
DMN100
Ordering Information (Note 3)
Part Number Case Packaging
DMN100-7-F SC59 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
M11
YM
DMN100
Document number: DS30049 Rev. 9 - 2
M11 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
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March 2012
© Diodes Incorporated
Page 2
θ
)
g
g
g
)
)
r
r
DMN100
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage Continuous
Drain Current Continuous
Pulsed
V
DSS
V
GSS
I
D
30 V
±20
1.1
4.0
V
A
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
R
TJ, T
PD
JA
STG
500 mW
250 K/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TJ = 25°C
@ T
= 125°C
J
Gate-Body Leakage
BV
I
I
DSS
DSS
GSS
30 — — V
—
—
—
—
1.0
10
± 100
VGS = 0V, ID = 250μA
μA
V
= 24V, VGS = 0V
DS
nA
VGS = ± 12V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
GS(th
R
DS (ON)
g
FS
1.0 — 3.0 V
— —
1.3 2.4
0.170
0.150
⎯
VDS = 10V, ID = 1.0mA
V
= 4.5V, ID = 0.5A
GS
Ω
S
= 10V, ID = 1.0A
V
GS
VDS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C
iss
C
oss
C
rss
Q
Q
Q
— 150 — pF
— 90 — pF
— 30 — pF
— 5.5 — nC
— 0.8 — nC
s
— 1.3 — nC
d
V
= 10V, V
DS
f = 1.0MHz
V
= 24V, ID = 1.0A,
DS
= 10V
V
GS
GS
= 0V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
t
D(ON
t
D(OFF
t
t
f
— 10 — ns
— 25 — ns
— 15 — ns
— 45 — ns
= 10V, ID = 0.5A,
V
DD
V
= 5.0V, R
GS
GEN
= 50Ω
SOURCE-DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
Forward Voltage
Reverse Recovery Time
Notes: 4. Pulse width ≤ 300μs, duty cycle ≤ 2%.
DMN100
Document number: DS30049 Rev. 9 - 2
www.diodes.com
I
S
I
SM
V
SD
t
r
2 of 4
— — 0.54 A —
— — 4.0 A —
— — 1.2 V
— 35 — ns
IF = 1.0A, V
IF = 1.0A, di/dt = 50A/μs
= 0V
GS
March 2012
© Diodes Incorporated
Page 3
RAIN C
URREN
T
R
O
R
R, NOR
R, NOR
4.0
1.0
DMN100
3.5
3.0
(A)
2.5
V = 4.5V
GS
MALIZED
2.0
, N
0.1
V = 10V
GS
1.5
D
I, D
1.0
0.5
0
01234
V , DRAIN-SOURCE VOLT AGE (V)
DS
Fig. 1 On-Region Characteristics
0.30
0.25
5
DS(ON)
DRAIN-SOURCE ON-RESISTANCE
0.01
0
1
I , DRAIN CURRENT (A)
D
2
3
4
Fig. 2 On-Resista nce vs. Drai n C ur r ent
4.0
3.5
3.0
0.20
2.5
MALIZED
0.15
MALIZED
2.0
0.10
DS(ON)
1.5
DS(ON)
1.0
0.05
DRAIN-SOURCE ON-RESISTANCE
0
-50
050 150100
T, JUNCTION TEMPERATURE ( C)
j
Fig. 3 On-Resistance vs. Junct i on Tem perature
°
DRAIN-SOURCE ON-RESISTANCE
0.5
0
01
V , GATE TO SOURCE VOLTAGE (V)
GS
2345
Fig. 4 On-Resistance vs. Gate-Source V oltage
Package Outline Dimensions
DMN100
Document number: DS30049 Rev. 9 - 2
K
J
A
SC59
Dim Min Max Typ
C
B
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G
H
G - - 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
N
M
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
D
L
N 0.70 0.80 0.75
0° 8° -
α
All Dimensions in mm
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March 2012
© Diodes Incorporated
Page 4
DMN100
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMN100
Document number: DS30049 Rev. 9 - 2
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
Y
Z
X E
C
IMPORTANT NOTICE
LIFE SUPPORT
4 of 4
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Dimensions Value (in mm)
Z 3.4
X 0.8
Y 1.0
C 2.4
E 1.35
March 2012
© Diodes Incorporated
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