Diodes DMN100 User Manual

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N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V

• High Drain Current: 1.1A

• Ideal for Notebook Computer, Portable Phone, PCMCIA

Cards, and Battery Powered Circuits

• ESD Protected Gate

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

ESD PROTECTED

SC59

Top View Equivalent Circuit

Mechanical Data

• Case: SC59

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.014 grams (approximate)

Drain

D

Gate

Gate
Protection
Diode

Source

To

SG

View

DMN100

Ordering Information (Note 3)

Part Number Case Packaging

DMN100-7-F SC59 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

M11

YM

DMN100

Document number: DS30049 Rev. 9 - 2

M11 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)

1 of 4

www.diodes.com

March 2012

© Diodes Incorporated

θ

)

g

g

g

)

)

r

r

DMN100

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage Continuous
Drain Current Continuous

Pulsed

V

DSS

V

GSS

I

D

30 V

±20

1.1

4.0

V
A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

R

TJ, T

PD

JA

STG

500 mW
250 K/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TJ = 25°C
@ T

= 125°C

J

Gate-Body Leakage

BV

I

I

DSS

DSS

GSS

30 — — V

—
—

—
—

1.0
10

± 100

VGS = 0V, ID = 250μA

μA

V

= 24V, VGS = 0V

DS

nA

VGS = ± 12V, V

DS

= 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

GS(th

R

DS (ON)

g

FS

1.0 — 3.0 V
— —

1.3 2.4

0.170

0.150

⎯

VDS = 10V, ID = 1.0mA
V

= 4.5V, ID = 0.5A

GS

Ω
S

= 10V, ID = 1.0A

V

GS

VDS = 10V, ID = 0.5A

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge

C

iss

C

oss

C

rss

Q
Q
Q

— 150 — pF
— 90 — pF
— 30 — pF
— 5.5 — nC
— 0.8 — nC

s

— 1.3 — nC

d

V

= 10V, V

DS

f = 1.0MHz

V

= 24V, ID = 1.0A,

DS

= 10V

V

GS

GS

= 0V

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time

t

D(ON

t

D(OFF

t
t

f

— 10 — ns
— 25 — ns
— 15 — ns
— 45 — ns

= 10V, ID = 0.5A,

V

DD

V

= 5.0V, R

GS

GEN

= 50Ω

SOURCE-DRAIN RATINGS (BODY DIODE)

Continuous Source Current
Pulse Source Current
Forward Voltage
Reverse Recovery Time

Notes: 4. Pulse width ≤ 300μs, duty cycle ≤ 2%.

DMN100

Document number: DS30049 Rev. 9 - 2

www.diodes.com

I

S

I

SM

V

SD

t

r

2 of 4

— — 0.54 A —
— — 4.0 A —
— — 1.2 V
— 35 — ns

IF = 1.0A, V
IF = 1.0A, di/dt = 50A/μs

= 0V

GS

March 2012

© Diodes Incorporated