Diodes DMMT5551S User Manual
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DMMT5401)
• Ideal for Low Power Amplification and Switching
• Intrinsically Matched NPN Pair (Note 1)
• 2% Matched Tolerance, h
, V
FE
CE(SAT)
, V
• Lead Free/RoHS Compliant (Note 4)
• "Green" Device (Note 5 and 6)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: K4R & K4T, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
BE(SAT)
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
H
K
J
C
E
E
1
C
1
2
2
B
B
2
1
DMMT5551
(K4R Marking Code)
C
B
L
F
D
E
C
1
1
E
B
2
1
DMMT5551S
(K4T Marking Code)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
F
⎯ ⎯
M
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
C
2
B
2
M 0.10 0.20 0.15
0° 8°
α
All Dimens ons in mm i
0.95
0.55
⎯
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30436 Rev. 8 - 2 1 of 4
www.diodes.com
Symbol Value Unit
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
JA
θ
STG
180 V
160 V
6.0 V
200 mA
300 mW
417 °C/W
-55 to +150
°C
DMMT5551/DMMT5551S
© Diodes Incorporated
C
O
CTO
R
T
O
T
TER
P, P
O
R
P
TIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
V
are matched with typical matched tolerances of 1% and maximum of 2%.
BE(SAT)
, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, V
FE
400
350
300
N (mW)
250
A
200
DISSI
150
WE
100
D
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
Fig. 1, Max Power Dissipation vs.
Ambie nt Temper at ure
Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE
V
CE(SAT)
V
BE(SAT)
C
hFE
⎯
⎯
⎯
⎯
⎯
obo
fT
180
160
6.0
⎯
⎯
⎯
50
50 nA
80
80
30
⎯
250
⎯
0.15
0.20
1.0 V
6.0 pF
50 250
100 300 MHz
⎯
8.0 dB
V
IC = 100μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
nA
VCB = 120V, IE = 0
μA
VCB = 120V, IE = 0, TA = 100°C
V
= 4.0V, IC = 0
EB
IC = 1.0mA, VCE = 5.0V
⎯
IC = 10mA, VCE = 5.0V
IC = 50mA, V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
CE
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 10V, f = 1.0MHz, IE = 0
V
= 10V, IC = 1.0mA,
CE
⎯
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
V
= 5.0V, IC = 200μA,
CE
RS = 1.0kΩ, f = 1.0kHz
, and Base Emitter Saturation Voltage,
CE(SAT)
= 5.0V
0.15
I
C
0.14
= 10
I
B
0.13
0.12
T = 150°C
0.11
EMI
0.10
A
0.09
0.08
LLE
0.07
0.06
SATURATION VOLTAGE (V)
CE(SAT)
V,
200
0.05
0.04
110100
I , COLLECTOR CURRENT (mA)
C
T = -50°C
A
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
1,000
DS30436 Rev. 8 - 2 2 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
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