Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DMMT5401)
• Ideal for Low Power Amplification and Switching
• Intrinsically Matched NPN Pair (Note 1)
• 2% Matched Tolerance, h
, V
FE
CE(SAT)
, V
• Lead Free/RoHS Compliant (Note 4)
• "Green" Device (Note 5 and 6)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: K4R & K4T, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
BE(SAT)
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
A
H
K
J
C
E
E
1
C
1
2
2
B
B
2
1
DMMT5551
(K4R Marking Code)
C
B
L
F
D
E
C
1
1
E
B
2
1
DMMT5551S
(K4T Marking Code)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
F
⎯ ⎯
M
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
C
2
B
2
M 0.10 0.20 0.15
0° 8°
α
All Dimens ons in mm i
0.95
0.55
⎯
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30436 Rev. 8 - 2 1 of 4
www.diodes.com
Symbol Value Unit
V
V
V
R
Tj, T
CBO
CEO
EBO
IC
Pd
JA
θ
STG
180 V
160 V
6.0 V
200 mA
300 mW
417 °C/W
-55 to +150
°C
DMMT5551/DMMT5551S
© Diodes Incorporated
C
O
CTO
R
T
O
T
TER
P, P
O
R
P
TIO
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure NF
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
V
are matched with typical matched tolerances of 1% and maximum of 2%.
BE(SAT)
, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, V
FE
400
350
300
N (mW)
250
A
200
DISSI
150
WE
100
D
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
Fig. 1, Max Power Dissipation vs.
Ambie nt Temper at ure
Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE
V
CE(SAT)
V
BE(SAT)
C
hFE
⎯
⎯
⎯
⎯
⎯
obo
fT
180
160
6.0
⎯
⎯
⎯
50
50 nA
80
80
30
⎯
250
⎯
0.15
0.20
1.0 V
6.0 pF
50 250
100 300 MHz
⎯
8.0 dB
V
IC = 100μA, IE = 0
V
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
nA
VCB = 120V, IE = 0
μA
VCB = 120V, IE = 0, TA = 100°C
V
= 4.0V, IC = 0
EB
IC = 1.0mA, VCE = 5.0V
⎯
IC = 10mA, VCE = 5.0V
IC = 50mA, V
IC = 10mA, IB = 1.0mA
V
IC = 50mA, IB = 5.0mA
CE
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 10V, f = 1.0MHz, IE = 0
V
= 10V, IC = 1.0mA,
CE
⎯
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
V
= 5.0V, IC = 200μA,
CE
RS = 1.0kΩ, f = 1.0kHz
, and Base Emitter Saturation Voltage,
CE(SAT)
= 5.0V
0.15
I
C
0.14
= 10
I
B
0.13
0.12
T = 150°C
0.11
EMI
0.10
A
0.09
0.08
LLE
0.07
0.06
SATURATION VOLTAGE (V)
CE(SAT)
V,
200
0.05
0.04
110100
I , COLLECTOR CURRENT (mA)
C
T = -50°C
A
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
1,000
DS30436 Rev. 8 - 2 2 of 4
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DMMT5551/DMMT5551S
© Diodes Incorporated
C CUR
RENT G
T
TER VOLTAG
G
T
H PRODUCT
H
1,000
AIN
100
V = 5V
CE
T = 25°C
A
T = 150°C
A
T = -50°C
A
1.0
V = 5V
CE
0.9
E (V)
0.8
T = -50°C
A
0.7
0.6
T = 25°C
A
0.5
10
FE
h, D
0.4
BE(ON)
V , BASE EMI
0.3
T = 150°C
A
1,000
1
1
I , COLLECTOR CURRENT (mA)
C
10
Fig. 3, DC Current Gain vs. Collector Current
100
0.2
0.1
110
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage vs. Collector Current
z)
(M
100
10
AIN BANDWID
T
f,
1
110
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs. Collector Current
100
Ordering Information (Note 6 & 9 )
100
Device Packaging Shipping
DMMT5551-7-F SOT-26 3000/Tape & Reel
DMMT5551S-7-F SOT-26 3000/Tape & Reel
Notes: 9. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
E
1
C
1
Date Code Key
E
K4R
B
C
2
2
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
YM
M = Month ex: 9 = September
B
2
1
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DS30436 Rev. 8 - 2 3 of 4
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E
1
K4T
E
2
C
2
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
YM
M = Month ex: 9 = September
B
2
C
1
B
1
DMMT5551/DMMT5551S
© Diodes Incorporated
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
IMPORTANT NOTICE
LIFE SUPPORT
DS30436 Rev. 8 - 2 4 of 4
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DMMT5551/DMMT5551S
© Diodes Incorporated
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