Diodes DMMT3906 User Manual

Features

• Epitaxial Planar Die Construction

• Intrinsically

Matched PNP Pair (Note 1)

• Small Surface Mount Package

• 2% h

• Lead

• "Gree

Matched Tolerance

FE

Free/RoHS Compliant (Note 3)

n" Device (Note 4 and 5)

Mechanical Data

• Case: SOT-26

• Case Material:

Compound, Note 5. UL Flammability Classification
Rating 94V-0

• Terminal Conn

• Terminals: Solderable per MI

• Lead Fr

Copper leadframe).

• Marking Informat

• Orde

ring Information: See Page 3

• Weight: 0.015 gr

Molded Plastic, "Green" Molding

ections: See Diagram

ee Plating (Matte Tin Finish annealed over

ion: See Page 3

ams (approximate)

L-STD-202, Method 208

DMMT3906

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

A

B

C

1,2

1

NC

E

1

H

K

J

C

2

Dim Min Max Typ

SOT-26

A 0.35 0.50 0.38

C

B

B 1.50 1.70 1.60
C 2.70 3.00 2.80

E

2

D
F

⎯ ⎯
⎯ ⎯

0.95

0.55

H 2.90 3.10 3.00
J 0.013 0.10 0.05

M

K 1.00 1.30 1.10

L

FD

L 0.35 0.55 0.40
M 0.10 0.20 0.15
All Dimens ons in mm i

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

Notes: 1. Built with adjacent die from a single wafer.

2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

V
V
V

R

Tj, T

CBO
CEO
EBO

I

C

P

θ

d
JA
STG

-40 V

-40 V

-5.0 V

-200 mA
225 mW
556

-55 to +150

°C/W

°C

DS30293 Rev. 6 - 2 1 of 4

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DMMT3906

© Diodes Incorporated

P

P

O

R

P

T

O

N

C

N

P

U

T C

PACIT

N

C

F

Electrical Characteristics

@TA = 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current

ON CHARACTERISTICS (Note 6)

DC Current Gain (Note 7)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product

Noise Figure NF

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. The DC current gain, h

, is matched at IC = -10mA and VCE = -1.0V with typical matched tolerances of 1% and maximum of 2%.

FE

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

h

V

CE(SAT)

V

BE(SAT)

C
C

h
h
h

h

BL

FE

obo

ibo

oe

f

t
t
t
t

ie
re
fe

T

d
r
s
f

-40

-40

-5.0

⎯
⎯

60
80

100

60
30

⎯

-0.65

⎯

⎯
⎯

⎯
⎯
⎯

-50 nA

-50 nA

⎯
⎯

300

⎯
⎯

-0.25

-0.40

-0.85

-0.95

4.5 pF
10 pF

2.0 12

0.1 10 x 10

100 400

3.0 60

250

⎯

⎯
⎯
⎯
⎯

⎯

4.0 dB

35 ns
35 ns

225 ns

75 ns

100

V

IC = -10μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -10μA, IC = 0
V

= -30V, V

CE

V

= -30V, V

CE

IC = -100µA, V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V

⎯

IC = -50mA, V

EB(OFF)
EB(OFF)

= -1.0V

CE

= -1.0V

CE

IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA

V

IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA

V

IC = -50mA, IB = -5.0mA

VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0

kΩ

-4

V

= 10V, IC = 1.0mA,

CE

f = 1.0kHz

⎯

μS

MHz

VCE = -20V, IC = -10mA, f = 100MHz
V

= -5.0V, IC = -100μA,

CE

RS = 1.0kΩ, f = 1.0kHz

VCC = -3.0V, IC = -10mA,
V

= 0.5V, IB1 = -1.0mA

BE(off)

VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA

= -3.0V
= -3.0V

350

)

E (p
A

10

A

(mW)
I

A

DISSI

300

250

200

150

WE

100

,

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

175

200

Fig. 1, Max Power Dissipation vs.

Ambient Temperatur e, Total Device

, I

IBO

OBO

C , OUTPUT CAPACITANCE (pF)

1

CB

1

10

100

0.1
V , COLLECTOR-BASE VOLTAGE (V)

Fig. 2, Input and Output Capacitance vs.

Collector-Base Voltage

DS30293 Rev. 6 - 2 2 of 4

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.diodes.com

DMMT3906

© Diodes Incorporated