Diodes DMJT9435 User Manual
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Features
• Ideally Suited for Automated Assembly Processes
• Low Collector-Emitter Saturation Voltage
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Continuous Base Current
Top View
= 25°C unless otherwise specified
A
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
Device Schematic
T
DMJT9435
LOW V
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
O
R
T
3
E
C
4
C
E
R
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
2
B
1
-45 V
-30 V
-6 V
-5 A
-3 A
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Power Dissipation @ TC = 25°C PD
Thermal Resistance, Junction to Case @ TC = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DMJT9435
Document number: DS31622 Rev. 2 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
R
R
R
, T
T
J
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JA
JA
JA
STG
1.2 W
104 °C/W
2 W
62.5 °C/W
3 W
42 °C/W
-55 to +150 °C
December 2008
© Diodes Incorporated
(BR)
(BR)
)
)
)
r
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
V
CEO
V
EBO
I
CER
I
EBO
h
FE
V
CE(SAT)
R
CE(SAT
V
⎯ ⎯
BE(SAT
V
⎯ ⎯
BE(ON
f
T
C
⎯
obo
C
⎯
ibo
t
⎯
on
t
⎯
d
t
⎯
t
⎯
off
t
⎯
s
t
⎯
f
-30
-6
⎯ ⎯
⎯ ⎯
⎯ ⎯
125
110
90
⎯
-100 -210
⎯ ⎯
⎯
-250 -550
⎯
⎯
160
140
200
110
155
100
1.0
⎯ ⎯
⎯ ⎯
-20
-200
-10
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
V
I
= -10mA
C
V
I
= -50μA
E
μA
V
CB
V
CB
μA
= 125°C
T
A
μA
VEB = -5V, IC = 0
V
CE
⎯
CE
CE
= -25V, RBE = 200Ω
= -25V, RBE = 200Ω,
= -1V, IC = -0.8A
= -1V, IC = -1.2A
= -1V, IC = -3A
IC = -0.8A, IB = -20mA
-275
mV
IC = -1.2A, IB = -20mA
IC = -3A, IB = -300mA
83 183
-1.25 V
-1.1 V
⎯
45 150 pF
⎯
⎯
90
⎯
⎯
⎯
⎯
55
⎯
mΩ
= -3.0A, IB = -300mA
I
C
IC = -3A, IB = -300mA
VCE = -4V, IC = -1.2A
V
= -10V, IC = -100mA,
CE
MHz
f = 100MHz
VCB = -10V, f = 1MHz
pF
VEB = -8V, f = 1MHz
ns
V
= -15V, IC = -1.2A,
CC
ns
I
= -20mA
B1
ns
ns
V
= -15V, IC = -1.2A,
CC
ns
I
= IB2 = -20mA
B1
ns
DMJT9435
1.6
1.2
Note 4
0.8
D
0.4
P , POWER DISSIPATION (W)
Note 3
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature
0.8
0.6
0.4
C
-I , COLLECTOR CURRENT (A)
0.2
0
048121620
°
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = -5mA
B
I = -4mA
B
I = -3mA
B
I = -2mA
B
I = -1mA
B
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DMJT9435
Document number: DS31622 Rev. 2 - 2
2 of 4
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December 2008
© Diodes Incorporated
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