Diodes DMJT9435 User Manual

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Features

• Ideally Suited for Automated Assembly Processes

• Low Collector-Emitter Saturation Voltage

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

NEW PRODUCT

Maximum Ratings @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Continuous Base Current

Top View

= 25°C unless otherwise specified

A

L

L

C

E

C

O

2,4

1

E

S

A

B

3

E

T

I

M

Device Schematic

T

DMJT9435

LOW V

PNP SURFACE MOUNT TRANSISTOR

CE(SAT)

Mechanical Data

• Case: SOT-223

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.115 grams (approximate)

O

R

T

3

E
C

4

C

E

R

Pin Out Configuration

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

2

B

1

-45 V

-30 V

-6 V

-5 A

-3 A

-1 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Power Dissipation @ TC = 25°C PD
Thermal Resistance, Junction to Case @ TC = 25°C
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

DMJT9435

Document number: DS31622 Rev. 2 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.

R

R

R

, T

T

J

1 of 4

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JA

JA

JA

STG

1.2 W

104 °C/W

2 W

62.5 °C/W
3 W

42 °C/W

-55 to +150 °C

December 2008

© Diodes Incorporated

(BR)

(BR)

)

)

)

r

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

NEW PRODUCT

Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS

Transition Frequency
Output Capacitance

Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time

Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2.0

V

CEO

V

EBO

I

CER

I

EBO

h

FE

V

CE(SAT)

R

CE(SAT

V

⎯ ⎯

BE(SAT

V

⎯ ⎯

BE(ON

f

T

C

⎯

obo

C

⎯

ibo

t

⎯

on

t

⎯

d

t

⎯

t

⎯

off

t

⎯

s

t

⎯

f

-30

-6

⎯ ⎯

⎯ ⎯
⎯ ⎯

125
110

90

⎯

-100 -210

⎯ ⎯
⎯

-250 -550

⎯

⎯

160

140

200

110
155
100

1.0

⎯ ⎯
⎯ ⎯

-20

-200

-10

⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V

V

I

= -10mA

C

V

I

= -50μA

E

μA

V

CB

V

CB

μA

= 125°C

T

A

μA

VEB = -5V, IC = 0

V

CE

⎯

CE
CE

= -25V, RBE = 200Ω
= -25V, RBE = 200Ω,

= -1V, IC = -0.8A
= -1V, IC = -1.2A
= -1V, IC = -3A

IC = -0.8A, IB = -20mA

-275

mV

IC = -1.2A, IB = -20mA
IC = -3A, IB = -300mA

83 183

-1.25 V

-1.1 V

⎯

45 150 pF

⎯

⎯

90

⎯
⎯
⎯
⎯

55

⎯

mΩ

= -3.0A, IB = -300mA

I

C

IC = -3A, IB = -300mA
VCE = -4V, IC = -1.2A

V

= -10V, IC = -100mA,

CE

MHz

f = 100MHz
VCB = -10V, f = 1MHz

pF

VEB = -8V, f = 1MHz

ns

V

= -15V, IC = -1.2A,

CC

ns

I

= -20mA

B1

ns
ns

V

= -15V, IC = -1.2A,

CC

ns

I

= IB2 = -20mA

B1

ns

DMJT9435

1.6

1.2

Note 4

0.8

D

0.4

P , POWER DISSIPATION (W)

Note 3

0

25 50 75 100 125 150

0

T , AMBIENT TEMPERATURE ( C)

A

Fig. 1 Power Dissipation vs. Ambient Temperature

0.8

0.6

0.4

C

-I , COLLECTOR CURRENT (A)

0.2

0

048121620

°

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I = -5mA

B

I = -4mA

B

I = -3mA

B

I = -2mA

B

I = -1mA

B

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

DMJT9435

Document number: DS31622 Rev. 2 - 2

2 of 4

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December 2008

© Diodes Incorporated

C

C

URR

N

T G

N

C

O

CTO

R

T

TER

T

TER TURN-O

OLT

G

T

TER

TURATIO

N VOLTAG

C

P

C

TANC

G

T

H

PRODU

C

T

H

NEW PRODUCT

DMJT9435

-EMI

LLE

-V ,

10

I/I = 10

CB

1

T = 150°C

A

VOLTAGE (V)

0.1

0.01

SATURATION

CE(SAT)

T = 85°C

A

T = -55°C

A

0.001
1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

C

vs. Collector Current

1.2

I = 10

/I

CB

E (V)

1.0

T = 25°C

A

1,000

T = 150°C

100

FE

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

AI

E

h, D

10

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

Fig. 3 Typical DC Current Gain vs. Collector Current

1.2

C

V = -4V

E (V)
A

1.0

V = -1V

CE

CE

N V

0.8

T = -55°C

A

0.6

T = 25°C

A

0.4

T = 85°C

A

T = 150°C

A

0.2

BE(ON)

0

-V , BASE -EM I

1 10 100 1,000 10,000

-I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

1,000

100

E (pF)

C

I

ibo

A
A

10

f = 1MHz

0.8

T = -55°C

A

0.6

T = 25°C

A

SA

T = 85°C

A

0.4

T = 150°C

A

0.2

0

1 10 100 1,000 10,000

BE(SAT)

-V , BASE-EMI

-I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

1,000

z)
(M

100

10

C

obo

1

0.1 1 10 100
V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capaci t ance Characteristics

AIN-BANDWID

T

f,

V = -10V

CE

f = 100MHz

1

0102030405060708090100

-I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current

DMJT9435

Document number: DS31622 Rev. 2 - 2

3 of 4

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December 2008

© Diodes Incorporated

DMJT9435

Ordering Information (Note 6)

Part Number Case Packaging

DMJT9435-13 SOT-223 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Package Outline Dimensions

NEW PRODUCT

A

A1

Y

ZPS33

W

W

ZPS33 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52

SOT-223

Dim Min Max Typ

A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50
E1 6.90 7.10 7.00

e — — 4.60
e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

Y1

Y2

X2

X1

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3

DMJT9435

Document number: DS31622 Rev. 2 - 2

4 of 4

www.diodes.com

December 2008

© Diodes Incorporated