Diodes DMJ7N70SK3 User Manual

NEW PRODUCT

700V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

R

(BR)DSS

700V

1.25Ω @ V

DS(on) max

GS

= 10V

D

TC = +25°C

3.9A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 Switching

TO252

Top View

GS

Top View

Features

 100% Unclamped Inductive Switch (UIS) test in production

 Low Gate Input Resistance

 Low Input Capacitance

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.33 grams (approximate)

D

D

Internal Schematic

DMJ7N70SK3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMJ7N70SK3-13 Standard TO252 2,500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMJ7N70SK3

Document number: DS36907 Rev. 3 - 2

J7N70S

YYWW

=Manufacturer’s Marking
J7N70S = Product Type Marking Code

.

YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)

1 of 6

www.diodes.com

May 2014

© Diodes Incorporated

V

V

DMJ7N70SK3

Maximum Ratings (@T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Maximum Body Diode Forward Current (Note 5)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Avalanche Current (Note 6)

Avalanche Energy (Note 6)

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

V

V

T

= +25°C

C

= +100°C

T

C

E

DSS

GSS

I

I

I

DM

I

AR

D

S

AR

alue Units

700 V

±30 V

3.9

2.5

A

3.0 A

15.6 A

1.5 A

76 mJ

Peak Diode Recovery dv/dt dv/dt 11.8 V/ns

NEW PRODUCT

Thermal Characteristics (@T

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

T

= +25°C

C

TC = +100°C

P

R

R

T

J, TSTG

θJA

θJC

D

alue Units

28

11
38

2.1

-55 to +150 °C

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

700

 

 

 

V

VGS = 0V, ID = 250µA

1 µA

100 nA

V

VGS = ±30V, VDS = 0V

= 700V, VGS = 0V

DS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

2 2.9 4 V





1 1.25 Ω

0.9 1.3 V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 2.5A

VGS = 0V, IS = 5A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Time (T

= +150°C) t

J

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Charge (T

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. UIS in production with V

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

= 50V, V

DD

= +150°C) Q

J

= 10V, L = 60mH, TJ = +25°C.

GS

C



iss

C

oss

C



rss

R

G

Q

g

Q



gs

Q

gd

t

D(on)

t



r

t

D(off)

t



f

t



rr

rr

Q



rr



rr















351

66

1.1

3.5

13.9

1.9

8.5

8.5

11.6

24.5

10

212

251

1.8

2.3































pF

Ω

nC

ns

ns

ns

µC

µC

V

= 50V, f = 1MHz,

DS

= 0V

V

GS

= 0V, VGS = 0V, f = 1MHz

V

DS

= 560V, ID = 5A,

V

DD

= 10V

V

GS

V

= 350V, VGS = 10V,

DD

= 4.7Ω, ID = 2.5A

R

G

I

= 5A, dI/dt = 100A/μs

S

DMJ7N70SK3

Document number: DS36907 Rev. 3 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated