Diodes DMHC4035LSD User Manual

485

C403

5LS

Y

NEW PRODUCT

Product Summary

Device

N-Channel 40V

P-Channel -40V

V

R

(BR)DSS

max

DS(ON)

45m @ V

58m @ VGS = 4.5V

65m @ V

100m @ VGS = -4.5V

= 10V

GS

= -10V

GS

Description

This new generation complementary MOSFET H-Bridge features low

on-resistance achievable with low gate drive.

Applications

• DC Motor Control

• DC-AC Inverters

NEW PRODUCT

ADVANCE INFORMATION

SO-8

Top View

Ordering Information (Note 4)

DMHC4035LSD

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Features

I

max

D

TA = +25°C

4.5A

4A

-3.7A

-2.9A

• 2 x N + 2 x P channels in a SOIC package

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

• Weight: 0.074 grams (approximate)

N2D/P2D

P1S/P2S

P1G

P2G N2G

H-Bridge

N1S/N2S

N1D/P1D

N1G

Top View

Pin Configuration

Solderable per MIL-STD-202, Method 208

Internal Schematic

Part Number Compliance Case Packaging

DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

1

Y WW

= Manufacturer’s Marking
C4035LS = Product Type Marking Code

www.diodes.com

YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

1 of 9

January 2014

© Diodes Incorporated

NEW PRODUCT

Thermal Characteristics (@T

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Maximum Ratings N-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

NEW PRODUCT

ADVANCE INFORMATION

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Ratings P-CHANNEL (@T

= +25°C, unless otherwise specified.)

Steady State

t<10s 53

= +25°C, unless otherwise specified.)

A

Steady

State

t<10s

Steady

State

t<10s

= +25°C, unless otherwise specified.)

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

T

V

DSS

V

GSS

I

I

I

I

I

I

DM

P

D

R

JA

θ

R

JC

θ

J, TSTG

D

D

D

D

S

DMHC4035LSD

1.5 W

85

°C/W

15

-55 to +150 °C

40 V

±20 V

4.5

3.5

5.8

4.5

4

3.1

5.1
4

1.5

25

A

A

A

A

A

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Steady

State

t<10s

Steady

State

t<10s

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

-40 V

±20 V

-3.7

-2.9

-4.8

-3.8

-2.9

-2.3

-3.9

-3.0

-1.5

-15

A

A

A

A

A

A

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

2 of 9

www.diodes.com

January 2014

© Diodes Incorporated

NEW PRODUCT

Electrical Characteristics N-CHANNEL (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

NEW PRODUCT

Gate-Drain Charge

Turn-On Delay Time

ADVANCE INFORMATION

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Electrical Characteristics P-CHANNEL (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

Total Gate Charge (VGS = -4.5V) Qg

Total Gate Charge (VGS = -10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

= +25°C, unless otherwise specified.)

A

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

V

SD

C

iss

C

oss

C

rss

R

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

= +25°C, unless otherwise specified.)

A

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

V

SD

C

iss

C

oss

C

rss

R

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

40

— —

— —

1 — 3 V

—

—

—

— 574

—

—

—

—

—

—

—

—

—

—

—

—

—

-40

— —

— —

-1 — -3 V

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

— —

26 45

35 58

0.7 1 V

87.8

38.7

1.6

5.9

12.5

1.7

2.2

3.1

2.6

15

5.5

6.5

1.2

—

49 65

73 100

-0.7 -1.2 V

587

88.1

40.2

12.3

5.4

11.1

1.5

2

3.6

2.9

36.3

15.3

15.5

16.9

V

1 A

±100 nA

m

—

—

pF

—

—



—

—

—

nC

—

—

—

—

ns

—

—

—

ns

nC

— V

-1 A

±100 nA

m

—

—

—

—

—

—

—

—

—

—

—

—

—

—

pF

pF

pF



nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

DMHC4035LSD

VGS = 0V, ID = 250A

VDS = 40V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

V

= 10V, ID = 3.9A

GS

V

= 4.5V, ID = 3.5A

GS

VGS = 0V, IS = 1.25A

V

= 20V, VGS = 0V,

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz

= 20V, ID = 3.9A

V

DS

V

= 20V, VGS = 10V,

DD

= 20, RG = 6,

R

L

I

= 3.9A, di/dt = 500A/s

F

VGS = 0V, ID = -250A

VDS = -40V, VGS = 0V

V

= ±20V, VDS = 0V

GS

VDS = VGS, ID = -250A

V

= -10V, ID = -4.2A

GS

= -4.5V, ID = -3.3A

V

GS

V

= 0V, IS = -1A

GS

V

= -20V, VGS = 0V,

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

= -20V, ID = -4.2A

DS

V

= -15V, VGS = -10V,

DD

= 6, ID = -1A

R

G

I

= -4.2A, di/dt = 500A/s

F

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

3 of 9

www.diodes.com

January 2014

© Diodes Incorporated

RAIN

C

URREN

T

R

C

URRENT

R

R

OUR

ON-R

R

RAIN-SOUR

CE O

N-R

TAN

C

R

R

OUR

ON-R

R

R

O

U

R

C

DMHC4035LSD

Typical Characteristics - N-CHANNEL

20

18

V= 10V

GS

V= 5.0V

GS

V= 3.5V

GS

16

14

(A)

12

10

V= 4.5V

GS

V= 4.0V

GS

V= 3.0V

GS

8

6

D

I, D

4

V= 2.3V

2

GS

V= 2.5V

GS

NEW PRODUCT

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

NEW PRODUCT

Figure 1 Typical Output Characteristics

0.05

Ω

0.045

ADVANCE INFORMATION

0.04

ESISTANCE ( )

0.035

0.03

CE

0.025

AIN-S

0.02

, D

0.015

DS(ON)

0.01
0 2 4 6 8 10 12 14 16 18 20

I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.08

Ω

V = 4.5VGS

0.07

0.06

ESISTANCE ( )

0.05

0.04

CE

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

0 2 4 6 8 10121416 1820

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

V = 4.5VGS

V = 10VGS

T = 150°C

A

T = 125°C

A

T = 25°C

I , DRAIN CURRENT (A)

D

T = 85°C

A

A

T = -55°C

A

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20

V= 5.0V

DS

18

16

14

(A)

12

10

8

AIN

6

D

I, D

4

2

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

0.2

Ω

0.18

E ( )

I = 3.9AD

0.16

0.14

ESIS

I = 3.5AD

0.12

0.1

0.08

0.06

0.04

, D

0.02

DS(ON)

0

02468101214161820

V , GATE-SOURCE VOLTAGE (V)GS

Figure 4 Typical Transfer Characteristics

1.8

V=V

10

GS

I= 10A

1.6

D

E

1.4

AIN-S

1.2

, D

1

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On- Resistance Variation with Temperature

V=5V

GS

I= 5A

D

°

January 2014

© Diodes Incorporated

R

R

OUR

CE ON-R

TANC

GATE THRESH

O

OLT

G

OUR

CE CUR

RENT

C

UNC

TION CAPACITANC

G

TE T

H

R

H

O

O

TAG

R

C

U

R

RENT

NEW PRODUCT

NEW PRODUCT

ADVANCE INFORMATION

DMHC4035LSD

0.08

Ω

E ( )

0.07

2.5

E (V)
A

0.06

V=5V

ESIS

0.05

GS

I= 5A

D

0.04

V=V

10

0.03

AIN-S

0.02

GS

I= 10A

D

2

I= 1mA

LD V

1.5

I = 250µA

D

D

1

, D

0.01

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

20

18

°

GS(th)

V,

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 8 Gate Threshold Variation vs. Ambient Temperature

1000

C

iss

16

(A)

14

E (pF)

12

T = 150°C

A

T = 125°C

A

T= 85°C

A

T= 25°C

A

T = -55°C

A

S

I, S

10

8

6

4

2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

V = 20V

DS

I= A

3.9

E (V)

D

8

L

6

LD V

ES

4

A

2

GS

V

0

02468101214

Q(nC)

, TOTAL GATE CHARGE

g

Figure 11 Gate Charge

100

, J

T

10

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

C

oss

C

rss

100

10

(A)

DC

P = 10s

W

1

AIN

D

0.1

I, D

0.01

0.1 1 10 100

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

T = 150°C

J(max)

T = 25°C

A

V = 4.5V

GS

Single Pulse
DUT on 1 * MRP Board

V , DRAIN-SOURCE VOLTAGE (V)

DS

W

P = 100µs

W

Figure 12 SOA, Safe Operation Area

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

5 of 9

www.diodes.com

January 2014

© Diodes Incorporated

R

CUR

RENT

R

CUR

RENT

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

R

R

OUR

ON-R

R

RAIN

OUR

C

NEW PRODUCT

NEW PRODUCT

ADVANCE INFORMATION

DMHC4035LSD

Typical Characteristics - P-CHANNEL

15

12

V= -10V

GS

V = -5.0V

GS

V= -3.5V

GS

(A)

9

V= -3.0V

GS

6

AIN

D

-I , D

V = -2.5V

GS

3

V = -2.0V

GS

0

012345

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Figure 13 Typical Output Characteristics

0.2

Ω

0.18

0.16

15

V = -5.0V

DS

12

(A)

9

6

AIN

D

-I , D
3

0

0123 45

T = 150°C

A

T = 125°C

A

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 14 Typical Transfer Characteristics

0.5

Ω

0.45

E ( )

I = -4.2A

D

0.4

0.14

ESISTANCE ( )

0.12

V = -4.5V

CE

0.1

GS

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0

0 2 4 6 8 101214 1618 20

-I , DRAIN SOURCE CURRENT (A)

D

V = -10V

GS

Figure 15 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.2

Ω

V = -4.5V

GS

0.18

ESISTANCE ( )

CE

0.16

0.14

0.12

0.1

T = 125CA°

T = 150CA°

T = 85CA°

T = 25CA°

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0

0 3 6 9 12 15

-I , DRAIN SOURCE CURRENT (A)

D

T = -55CA°

Figure 17 Typical On-Resistance vs.

Drain Current and Temperature

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

6 of 9

www.diodes.com

0.35

ESIS

0.3

0.25

I = -3.3A

D

0.2

0.15

AIN-S

0.1

, D

0.05

DS(ON)

0

0 2 4 6 8 101214161820

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 16 Typical Transfer Characteristics

1.8

V = -10V

GS

I = -10A

1.6

D

E

1.4

-S

1.2

, D

1

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 18 On-Resistance Variation with Temperature

V = -5V

GS

I = -5A

D

°

January 2014

© Diodes Incorporated

R

RAIN-SOUR

CE O

N-R

TAN

C

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

C

UNC

TION CAPACITANC

F

G

T

OUR

C

OLT

G

R

C

U

R

RENT

NEW PRODUCT

NEW PRODUCT

ADVANCE INFORMATION

DMHC4035LSD

0.15

2

Ω

E ( )

ESIS

0.12

0.09

0.06

-

V=5V

GS

-5

I= A

D

V= -10V

GS

I= A

-10

D

1.8

E (V)

1.6

-I = 250µA

1.4

LD V

D

-I = 1m AD

1.2

1

0.03

, D

DS(on)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 19 On-Resistance Variation with Temperature

15

°

0.8

GS(TH)

V,

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Figure 20 Gate Threshold Variation vs. Ambient Temperature

1000

C

iss

)

12

(A)

E (p

9

T= 85CA°

6

S

-I , S
3

0

0 0.3 0.6 0.9 1.2 1.5

T= 125CA°

T= 150CA°

-V , SOURCE-DRAIN VOLTAGE (V)

SD

T= 25CA°

T= -55CA°

Figure 21 Diode Forward Voltage vs. Current

10

8

E (V)
A

6

E V

V = -20V

DS

I = -4.2A

4

E-S

D

A

GS

2

-V ,

0

024681012

Q , TOTAL GATE CHARGE (nC)

g

Figure 23 Gate-Charge Characteristics

100

, J

T

10

0 5 10 15 20 25 30 35 40

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

oss

Figure 22 Typical Junction Capacitance

100

10

(A)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

T = 150°C

J(max)

T = 25°C

A

V = -4.5V

GS

Single Pulse
DUT on 1 * MRP Board

P = 1ms

W

P = 100µs

W

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

AIN

D

-I , D

1

0.1

0.01

Figure 24 SOA, Safe Operation Area

C

rss

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

7 of 9

www.diodes.com

January 2014

© Diodes Incorporated

T

R

T T

HER

R

TANC

NEW PRODUCT

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

1

D = 0.9
D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

ANSIEN

D = Single Pulse

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)

Figure 25 Transient Thermal Resistance

E1

E

A1

Detail ‘A’

L

0.254
Gauge Plan e

Seating Plane

7°~9

A2

e

b

D

A

A3

h

°

45

°

Detail ‘A’

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

C1

C2

Y

R (t) = r(t) * R

θθ

JA JA

R = 110°C/W

θ

JA

Duty Cycle, D = t1/ t2

Dim Min Max

Dimensions Value (in mm)

X 0.60

Y 1.55
C1 5.4
C2 1.27

SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10
E1 3.85 3.95

e 1.27 Typ
h - 0.35
L 0.62 0.82

0° 8°

θ

All Dimensions in mm

DMHC4035LSD

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

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NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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NEW PRODUCT

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMHC4035LSD

DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

9 of 9

www.diodes.com

January 2014

© Diodes Incorporated