Diodes DMHC4035LSD User Manual
485
C403
5LS
Y
NEW PRODUCT
Product Summary
Device
N-Channel 40V
P-Channel -40V
V
R
(BR)DSS
max
DS(ON)
45m @ V
58m @ VGS = 4.5V
65m @ V
100m @ VGS = -4.5V
= 10V
GS
= -10V
GS
Description
This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.
Applications
• DC Motor Control
• DC-AC Inverters
NEW PRODUCT
ADVANCE INFORMATION
SO-8
Top View
Ordering Information (Note 4)
DMHC4035LSD
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Features
I
max
D
TA = +25°C
4.5A
4A
-3.7A
-2.9A
• 2 x N + 2 x P channels in a SOIC package
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
• Weight: 0.074 grams (approximate)
N2D/P2D
P1S/P2S
P1G
P2G N2G
H-Bridge
N1S/N2S
N1D/P1D
N1G
Top View
Pin Configuration
Solderable per MIL-STD-202, Method 208
Internal Schematic
Part Number Compliance Case Packaging
DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
1
Y WW
= Manufacturer’s Marking
C4035LS = Product Type Marking Code
www.diodes.com
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
1 of 9
January 2014
© Diodes Incorporated
NEW PRODUCT
Thermal Characteristics (@T
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Maximum Ratings N-CHANNEL (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
NEW PRODUCT
ADVANCE INFORMATION
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Ratings P-CHANNEL (@T
= +25°C, unless otherwise specified.)
Steady State
t<10s 53
= +25°C, unless otherwise specified.)
A
Steady
State
t<10s
Steady
State
t<10s
= +25°C, unless otherwise specified.)
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
T
V
DSS
V
GSS
I
I
I
I
I
I
DM
P
D
R
JA
θ
R
JC
θ
J, TSTG
D
D
D
D
S
DMHC4035LSD
1.5 W
85
°C/W
15
-55 to +150 °C
40 V
±20 V
4.5
3.5
5.8
4.5
4
3.1
5.1
4
1.5
25
A
A
A
A
A
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<10s
Steady
State
t<10s
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
-40 V
±20 V
-3.7
-2.9
-4.8
-3.8
-2.9
-2.3
-3.9
-3.0
-1.5
-15
A
A
A
A
A
A
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
2 of 9
www.diodes.com
January 2014
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics N-CHANNEL (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
NEW PRODUCT
Gate-Drain Charge
Turn-On Delay Time
ADVANCE INFORMATION
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Electrical Characteristics P-CHANNEL (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
= +25°C, unless otherwise specified.)
A
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
= +25°C, unless otherwise specified.)
A
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
40
— —
— —
1 — 3 V
—
—
—
— 574
—
—
—
—
—
—
—
—
—
—
—
—
—
-40
— —
— —
-1 — -3 V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— —
26 45
35 58
0.7 1 V
87.8
38.7
1.6
5.9
12.5
1.7
2.2
3.1
2.6
15
5.5
6.5
1.2
—
49 65
73 100
-0.7 -1.2 V
587
88.1
40.2
12.3
5.4
11.1
1.5
2
3.6
2.9
36.3
15.3
15.5
16.9
V
1 A
±100 nA
m
—
—
pF
—
—
—
—
—
nC
—
—
—
—
ns
—
—
—
ns
nC
— V
-1 A
±100 nA
m
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DMHC4035LSD
VGS = 0V, ID = 250A
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250A
V
= 10V, ID = 3.9A
GS
V
= 4.5V, ID = 3.5A
GS
VGS = 0V, IS = 1.25A
V
= 20V, VGS = 0V,
DS
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
= 20V, ID = 3.9A
V
DS
V
= 20V, VGS = 10V,
DD
= 20, RG = 6,
R
L
I
= 3.9A, di/dt = 500A/s
F
VGS = 0V, ID = -250A
VDS = -40V, VGS = 0V
V
= ±20V, VDS = 0V
GS
VDS = VGS, ID = -250A
V
= -10V, ID = -4.2A
GS
= -4.5V, ID = -3.3A
V
GS
V
= 0V, IS = -1A
GS
V
= -20V, VGS = 0V,
DS
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= -20V, ID = -4.2A
DS
V
= -15V, VGS = -10V,
DD
= 6, ID = -1A
R
G
I
= -4.2A, di/dt = 500A/s
F
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
3 of 9
www.diodes.com
January 2014
© Diodes Incorporated
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