Diodes DMHC3025LSD User Manual

4

8

5

C3025LS

Y

NEW PRODUCT

Product Summary

Device

N-Channel 30V

P-Channel -30V

V

(BR)DSS

R

25m @ V

40m @ VGS = 4.5V

50m @ V

80m @ VGS = -4.5V

DS(ON)

max

GS

GS

= 10V

= -10V

Description

This new generation complementary MOSFET H-Bridge features low
on-resistance achievable with low gate drive.

Applications

 DC Motor control
 DC-AC Inverters

ADVANCE INFORMATION

SO-8

Top View

DMHC3025LSD

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Features

 2 x N + 2 x P channels in a SOIC package

max

I

D

TA = +25°C

6.0

4.6

-4.2

-3.2

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

N2D/P2D

P1S/P2S

P1G

H-Bridge

N1G

Top View

Pin Configuration

P2G N2G

N1S/N2S

N1D/P1D

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMHC3025LSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

1

Y WW

= Manufacturer’s Marking

www.diodes.com

C3025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)

1 of 9

November 2013

© Diodes Incorporated

DMHC3025LSD

Document number: DS35821 Rev. 4 - 2

NEW PRODUCT

Thermal Characteristics (@T

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

Maximum Ratings N-CHANNEL (@T

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

ADVANCE INFORMATION

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)

= +25°C, unless otherwise specified.)

Steady State

t < 10s 50

= +25°C, unless otherwise specified.)

A

= +25C

Steady

State

t < 10s

Steady

State

t < 10s

T

A

T

= +70C

A

= +25C

T

A

T

= +70C

A

= +25C

T

A

T

= +70C

A

= +25C

T

A

T

= +70C

A

T

V

DSS

V

GSS

I

I

I

I

I

I

DM

P

D

R

JA

R

JC

J, TSTG

D

D

D

D

S

DMHC3025LSD

1.5 W
83

°C/W

14.5

-55 to 150 °C

30 V

±20 V

6.0

4.8

7.8

6.1

4.6

3.6

6.1

4.8

A

A

A

A

2.5 A

60 A

Maximum Ratings P-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

T

= +25C

A

= +70C

T

A

= +25C

T

A

T

= +70C

A

T

= +25C

A

= +70C

T

A

= +25C

T

A

T

= +70C

A

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Steady

State

t < 10s

Steady

State

t < 10s

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)

Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

DMHC3025LSD

Document number: DS35821 Rev. 4 - 2

2 of 9

www.diodes.com

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

30 V

±20 V

-4.2

-3.3

-5.4

-4.3

-3.2

-2.5

-4.3

-3.3

-2.5

A

A

A

A

A

-30 A

November 2013

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

)

g

g

g

)

r

)

r

r

NEW PRODUCT

Electrical Characteristics N-CHANNEL (@T

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time

ADVANCE INFORMATION

Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

BV

I
I

V

GS(th

R

DS (ON)

|Y

V

C
C
C

Q

Q

t

D(on

t

D(off

DSS

DSS

GSS

SD

iss

oss

rss

R

t

t

t

r

Q

30
— —
— —

1 — 2 V
—
—
—

|

fs

—

—
—
—
—
—
—
—

s

d

f

r

—
—
—
—
—
—
—

—

19 25
26 40

4 — S

0.70 1.2 V

590
122

58

1.5

5.4

11.7

1.8

2.1

11.2
15

17.5

8.7

18.3
12

— V

0.5 A
±1 A

m

—
—

pF
—
—



—
—
—

nC

—
—
—
—

ns

—
—
—

ns

nC

DMHC3025LSD

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 5A

V

GS

V

= 4.5V, ID = 4A

GS

VDS = 5V, ID = 5A
VGS = 0V, IS = 1.7A

= 15V, VGS = 0V,

V

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

= 15V, ID = 7.8A

DS

= 15V, VGS = 4.5V,

V

DD

= 2.4, RG = 1,

R

L

I

= 12A, di/dt = 500A/s

F

Electrical Characteristics P-CHANNEL (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

-30
— —
— —

— —

-0.5 A
±1 A

V

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

-1 — -2 V
—
—
—

|

—

43 50
68 80

3.5 — S

-0.7 -1.2 V

VDS = VGS, ID = -250A

= -10V, ID = -5A

V

m

GS

V

= -4.5V, ID = -4A

GS

VDS = -5V, ID = -5A

VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

Q

t

t

t

r

—
—
—
—
—
—
—

s

d

f

r

—
—
—
—
—
—
—

631
137

70

10.8

5.5

11.4

1.8

2.4

7.5

4.9

28.2

13.5

15.1

15.3

—
—
—
—
—
—
—
—
—
—
—
—
—
—

pF
pF
pF



= -15V, VGS = 0V,

V

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz
nC
nC

V

= -15V, ID = -6A

nC

DS

nC
ns
ns
ns

= -15V, VGS = -10V,

V

DD

R

= 6, ID = -1A

G

ns
ns
nC

= 12A, di/dt = 500A/s

I

F

DMHC3025LSD

Document number: DS35821 Rev. 4 - 2

3 of 9

www.diodes.com

November 2013

© Diodes Incorporated