Diodes DMGD7N45SSD User Manual

4

8

5

Y

4

8

5

Y

W

Product Summary

V

R

(BR)DSS

450V

4Ω @ V

DS(ON) MAX

= 10V

GS

Description

This new generation complementary MOSFET features low on-

resistance and fast switching, making it ideal for high efficiency power

management applications.

Applications

• Motor Control

• Backlighting

• DC-DC Converters

• Power Management Functions

NEW PRODUCT

Top View

G1

S2

G2

I

D

TA = +25°C

0.85A

Top View

Pin Configuration

DMGD7N45SSD

450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Input Capacitance

• High BVDss Rating for Power Application

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1S1

D1

D2

G1

G2

D2

S1

Equivalent Circuit

e3

D2

S2

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMGD7N45SSD-13 Standard SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

D7N45SD

Y WW

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

1

Chengdu A/T Site

D7N45SD

Y W

1

Shanghai A/T Site

= Manufacturer’s Marking D7N45SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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February 2014

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Forward Current (Note 5)

Avalanche Current (Note 6)

Avalanche Energy (Note 6)

L = 10mH (Note 8) 2.2

L = 10mH (Note 8) 25

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

450

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

|Y

V

fs

SD

3.5

⎯

0.55 1.1

|

⎯

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

6. I

AR

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

gs

Q

gd

t

D(on)

t

⎯

r

t

D(off)

t

f

t

⎯

rr

Q

⎯

rr

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

⎯

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DMGD7N45SSD

V

DSS

V

GSS

Steady State

t < 10s 0.62

ID

t < 1s 0.85 A

I

DM

I

S

L = 60mH

Steady state

t<10s 20.2 °C/W

⎯ ⎯

1 µA

±100

⎯

4.5 V

3 4 Ω

⎯

0.7 1.2 V

256

22.5

0.83

2.3

6.9

1.4

3.4

7

6.4

18.9

56.6

103

314

⎯

I

AS

E

P

R

ΘJA

R

ΘJC

T

J, TSTG

AS

D

V

VGS = 0V, ID = 10mA

VDS = 450V, VGS = 0V

nA

VGS = ±30V, VDS = 0V

VDS =10V ID = 1mA

VGS = 10V, ID = 0.4A

S

V

VGS = 0V, IS = 0.7A

V

pF

f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

nC

V

nS

I

nS

I

nC

450 V

±30 V

0.5

2.2 A

1.7 A

1.4

56

1.64 W

78 °C/W

13.3 °C/W

-55 to +150 °C

= 10V, ID =0.4A

DS

= 25V, VGS = 0V

DS

= 360V,ID = 0.7A, VGS = 10V

DS

= 10V, RL = 562Ω, RG = 10Ω,

GS

= 0.4A

D

= 1A, dI/dt = 100A/μs

F

February 2014

A

mJ

R

N CUR

REN

T

R

CUR

RENT

R

OUR

ON-R

R

OUR

CE ON-R

C

R

OUR

ON-R

R

RAIN

OUR

C

DMGD7N45SSD

2.0

V = 20VGS

V= 6.0V

GS

1.8

V= 7.0V

1.6

V = 15VGS

1.4

(A)

1.2

GS

V= 5.5V

GS

1.0

0.8

AI

0.6

D

NEW PRODUCT

I, D

0.4

V= 4.8V

0.2

0.0 0

24

6810

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

12 14

Figure 1 Typical Output Characteristics

4.0

Ω

3.8

V= 5.0V

GS

16 18 20

3.6

3.4

ESISTANCE ( )

CE

3.2

3.0

V = 10VGS

2.8

2.6

AIN-S

2.4

, D

2.2

DS(ON)

2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

I , DRAIN-SOURCE CURRENT (A)D Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

12

Ω

V = 10VGS

10

T = 150°C

A

ESISTANCE ( )

8

6

CE

T = 125°C

A

T = 85°C

A

4

AIN-S

, D

2

DS(ON)

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

I , DRAIN CURRENT (A)

D

T = 25°C

A

T = -55°C

A

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

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1.0

V = 10VDS

0.8

(A)

0.6

T = 150°C

A

T = 85°C

AIN

D

I, D

0.4

T = 125°C

A

T = 25°C

A

0.2

T = -55°C

A

0

12345678

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

10

Ω

E ( )

9

8

I = 400mA

ESISTAN

7

D

6

5

AIN-S

4

, D

3

DS(ON)

2

2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristic

3.0

V=V

2.5

E

20

GS

I= 1.0A

D

2.0

-S

V=V

1.5

, D

1.0

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

0

-50-25 0 255075100125150 T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

10

GS

I= 0.7A

D

°

February 2014

R

OUR

CE ON-R

TANC

GATE THRESH

O

T

G

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

G

H

RESH

O

G

R

N

CUR

R

N

T

NEW PRODUCT

10

Ω

9

E ( )

8

7

ESIS

6

5

5.0

4.5

E (V)

V =20V

GS

I= 1.0A

D

A L

4.0

V=V

10

GS

I= 0.7A

D

LD V

3.5

I = 250µA

D

DMGD7N45SSD

I= 1mA

D

4

3

3.0

AIN-S

2

, D

1

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 7 On-Resistance Variation with Temperature

2.0

1.8

2.5

GS(th)

V,

2.0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Figure 8 Gate Threshold Variation vs. Ambient Temperat ure

1000

C

iss

1.6 100

(A)

1.4

1.2

T = 150°C

A

T =85°CA

E (pF)

C

oss

S

I, S

1.0

0.8

0.6

0.4

T = 125°C

A

T= 25°C

A

T = -55°C

A

, J

10

C

1

T

rss

0.2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

E (V)

8

f = 1MHz

0

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Juncti on Capacitance

10

P = 100µs

R

DS(on)

Limited

W

1

LTA

V = 360V

6

LD V

DS

I= A

0.7

D

4

ATE T

2

GS

V

0

01234567

Q(nC)

, TOTAL GATE CHARGE

g

Figure 11 Gate Charge

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

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(A)

E

0.1

AI

D

I, D

0.01

T = 150°C

J(max)

T = 25°C

A

V = 10V

GS

Single Pulse DUT on 1 * MRP FR-4 Board

0.001

0.1 1 10 100 1000

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

February 2014

RAIN C

URREN

T

RAIN CUR

REN

T

R

CUR

RENT

T

R

T

HER

R

TANC

NEW PRODUCT

DMGD7N45SSD

10

R

DS(on)

Limited

1

(A)

DS

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

0.1

D

I, D

0.01

T = 150°C

J(max)

T = -25°C

A

V = 10V

GS

Single Pulse

0.001

DUT on 1 * MRP Board

0.1 1 10 100 1000 V , DRAIN-SOURCE VOLTAGE (V)

Figure 13 SOA, Safe Operation Area

10

R

DS(on)

Limited

P = 100µs

W

10

R

DS(on)

Limited

1

(A)

0.1

D

0.01

-I , D

T = 150°C

J(max)

T = 85°C

A

V = 10V

GS

Single Pulse DUT on 1 * MRP Board

0.001

0.1 1 10 100 1000

-V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

Figure 14 SOA, Safe Operation Area

1

(A)

0.1

DC

P = 10s

0.01

AIN

D

-I , D

0.001

0.0001

T = 150°C

J(max)

T = 125°C

A

V = 10V

GS

Single Pulse DUT on 1 * MRP Board

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.1 1 10 100 1000

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 15 SOA, Safe Operat ion Area

1

D = 0.9 D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

ANSIEN

r(t),

0.001

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

D = Single Pulse

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R

θθ

JA JA

R = 98°C/W

θ

JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 16 Transient Thermal Resistance

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

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February 2014

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

e

b

D

E1

A2

E

A1

Detail ‘A’

h

°

45

A3

A

L

0.254 Gauge Plane

Seating Plane

7°~9

°

Detail ‘A’

NEW PRODUCT

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

C2

Y

C1

Dim Min Max

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

SO-8

A — 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h — 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

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February 2014

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

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February 2014