Diodes DMGD7N45SSD User Manual

4

8

5

Y

4

8

5

Y

W

Product Summary

V

R

(BR)DSS

450V

4Ω @ V

DS(ON) MAX

= 10V

GS

Description

This new generation complementary MOSFET features low on-

resistance and fast switching, making it ideal for high efficiency power

management applications.

Applications

• Motor Control

• Backlighting

• DC-DC Converters

• Power Management Functions

NEW PRODUCT

Top View

G1

S2

G2

I

D

TA = +25°C

0.85A

Top View

Pin Configuration

DMGD7N45SSD

450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Input Capacitance

• High BVDss Rating for Power Application

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1S1

D1

D1

D2

G1

G2

D2

S1

Equivalent Circuit

e3

D2

S2

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMGD7N45SSD-13 Standard SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

D7N45SD

Y WW

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

1

Chengdu A/T Site

D7N45SD

Y W

1

Shanghai A/T Site

= Manufacturer’s Marking
D7N45SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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February 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Forward Current (Note 5)

Avalanche Current (Note 6)

Avalanche Energy (Note 6)

L = 10mH (Note 8) 2.2

L = 10mH (Note 8) 25

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

450

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

|Y

V

fs

SD

3.5

⎯

0.55 1.1

|

⎯

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

6. I

AR

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

gs

Q

gd

t

D(on)

t

⎯

r

t

D(off)

t

f

t

⎯

rr

Q

⎯

rr

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

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DMGD7N45SSD

V

DSS

V

GSS

Steady State

t < 10s 0.62

ID

t < 1s 0.85 A

I

DM

I

S

L = 60mH

L = 60mH

Steady state

t<10s 20.2 °C/W

⎯ ⎯

1 µA

±100

⎯

4.5 V

3 4 Ω

⎯

0.7 1.2 V

256

22.5

0.83

2.3

6.9

1.4

3.4

7

6.4

18.9

56.6

103

314

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

I

AS

E

P

R

ΘJA

R

ΘJC

T

J, TSTG

AS

D

V

VGS = 0V, ID = 10mA

VDS = 450V, VGS = 0V

nA

VGS = ±30V, VDS = 0V

VDS =10V ID = 1mA

VGS = 10V, ID = 0.4A

S

V

VGS = 0V, IS = 0.7A

V

pF

f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

nC

V

V

nS

I

nS

I

nC

450 V

±30 V

0.5

2.2 A

1.7 A

1.4

56

1.64 W

78 °C/W

13.3 °C/W

-55 to +150 °C

= 10V, ID =0.4A

DS

= 25V, VGS = 0V

DS

= 360V,ID = 0.7A, VGS = 10V

DS

= 10V, RL = 562Ω, RG = 10Ω,

GS

= 0.4A

D

= 1A, dI/dt = 100A/μs

F

February 2014

© Diodes Incorporated

A

A

mJ

R

N CUR

REN

T

R

CUR

RENT

R

R

OUR

ON-R

R

R

OUR

CE ON-R

C

R

R

OUR

ON-R

R

RAIN

OUR

C

DMGD7N45SSD

2.0

V = 20VGS

V= 6.0V

GS

1.8

V= 7.0V

1.6

V = 15VGS

1.4

(A)

1.2

GS

V= 5.5V

GS

1.0

0.8

AI

0.6

D

NEW PRODUCT

I, D

0.4

V= 4.8V

0.2

0.0
0

24

6810

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

12 14

Figure 1 Typical Output Characteristics

4.0

Ω

3.8

V= 5.0V

GS

16 18 20

3.6

3.4

ESISTANCE ( )

CE

3.2

3.0

V = 10VGS

2.8

2.6

AIN-S

2.4

, D

2.2

DS(ON)

2.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

12

Ω

V = 10VGS

10

T = 150°C

A

ESISTANCE ( )

8

6

CE

T = 125°C

A

T = 85°C

A

4

AIN-S

, D

2

DS(ON)

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

I , DRAIN CURRENT (A)

D

T = 25°C

A

T = -55°C

A

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMGD7N45SSD

Document number: DS36011 Rev. 7 - 2

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1.0

V = 10VDS

0.8

(A)

0.6

T = 150°C

A

T = 85°C

AIN

D

I, D

0.4

T = 125°C

A

A

T = 25°C

A

0.2

T = -55°C

A

0

12345678

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

10

Ω

E ( )

9

8

I = 400mA

ESISTAN

7

D

6

5

AIN-S

4

, D

3

DS(ON)

2

2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristic

3.0

V=V

2.5

E

20

GS

I= 1.0A

D

2.0

-S

V=V

1.5

, D

1.0

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

0

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

10

GS

I= 0.7A

D

°

February 2014

© Diodes Incorporated