Diodes DMG9N65CTI User Manual
Product Summary
I
V
R
(BR)DSS
650V
V
DS(ON)
= 10V
GS
Package
ITO-220AB 9.0A
D
TC = +25°C
Description
This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power
management applications.
Applications
• Motor Control
• Backlighting
• DC-DC Converters
• Power Management Functions
Top View
ITO-220AB
Bottom View
DMG9N65CTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low Input Capacitance
• High BVDss Rating for Power Application
• Low Input/Output Leakage
• Lead-Free Finish; RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: ITO-220AB
• Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram Below
• Weight: ITO-220AB – 1.85 grams (approximate)
D
G
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMG9N65CTI ITO-220AB 50 pieces/tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
9N65CTI
YYWW AB
9N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)
DMG9N65CTI
Document number: DS36027 Rev. 3 - 2
1 of 5
www.diodes.com
January 2013
© Diodes Incorporated
)
)
g
g
g
)
r
)
r
r
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Notes 5 & 6)
= 10V
V
GS
Pulsed Drain Current (Note 7)
Steady
State
= +25°C
T
C
T
= +70°C
C
V
V
DSS
GSS
I
I
DM
Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH IAR
Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH EAR
Thermal Characteristics
Characteristic Symbol Max Unit
= +25°C
T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
C
T
= +70°C
C
T
= +25°C R
C
P
θJC
T
, T
J
D
D
STG
DMG9N65CTI
650 V
±30 V
9.0
7.0
A
30 A
2.7 A
260 mJ
13
8
8.84
W
°C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
650 - - V
- - 1.0 µA
- - ±100 nA
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON
|Y
V
SD
|
fs
3 - 5 V
- 0.7 1.3 Ω
- 8.5 - S
- 0.7 1.0 V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 4.5A
VDS = 40V, ID = 4.5A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
oss
C
rss
R
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Q
Q
t
D(on
t
D(off
t
t
t
Q
Notes: 5. Device mounted on an infinite heatsink.
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
AR
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
iss
s
d
f
r
- 2310 -
-
-
-
-
-
-
-
-
-
-
-
-
122
2.2
2.2
39
8.5
11.9
39
29
122
28
570
4.17
V
-
pF
-
- Ω
-
-
nC
-
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
GS
I
D
- ns
- ns
- ns
V
GS
R
G
- ns
- ns
-
dI/dt = 100A/µs, V
I
μC
F
= 8A Body Diode Reverse Recovery Charge
= 25V, VGS = 0V,
= 10V, VDS = 520V,
= 8A
= 10V, VDS = 325V,
= 25Ω, ID = 8A
DS
= 100V,
DMG9N65CTI
Document number: DS36027 Rev. 3 - 2
2 of 5
www.diodes.com
January 2013
© Diodes Incorporated
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