Diodes DMG9N65CTI User Manual

Product Summary

I

V

R

(BR)DSS

650V

V

DS(ON)

= 10V

GS

Package

ITO-220AB 9.0A

D

TC = +25°C

Description

This new generation complementary dual MOSFET features low on­resistance and fast switching, making it ideal for high efficiency power
management applications.

Applications

• Motor Control

• Backlighting

• DC-DC Converters

• Power Management Functions

Top View

ITO-220AB

Bottom View

DMG9N65CTI

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Input Capacitance

• High BVDss Rating for Power Application

• Low Input/Output Leakage

• Lead-Free Finish; RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: ITO-220AB

• Case Material: Molded Plastic, “Green” Molding Compound, UL

Flammability Classification Rating 94V-0

• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram Below

• Weight: ITO-220AB – 1.85 grams (approximate)

D

G

S

Equivalent Circuit

Top View

Pin Out Configuration

Ordering Information (Note 4)

Part Number Case Packaging

DMG9N65CTI ITO-220AB 50 pieces/tube

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

9N65CTI

YYWW AB

9N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)

DMG9N65CTI

Document number: DS36027 Rev. 3 - 2

1 of 5

www.diodes.com

January 2013

© Diodes Incorporated

)

)

g

g

g

)

r

)

r

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Notes 5 & 6)

= 10V

V

GS

Pulsed Drain Current (Note 7)

Steady

State

= +25°C

T

C

T

= +70°C

C

V
V

DSS

GSS

I

I

DM

Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH IAR
Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH EAR

Thermal Characteristics

Characteristic Symbol Max Unit

= +25°C

T

Power Dissipation (Note 5)

Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

C

T

= +70°C

C

T

= +25°C R

C

P

θJC

T

, T

J

D

D

STG

DMG9N65CTI

650 V
±30 V

9.0

7.0

A

30 A

2.7 A

260 mJ

13

8

8.84

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

650 - - V

- - 1.0 µA

- - ±100 nA

VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V

VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON

|Y
V

SD

|

fs

3 - 5 V

- 0.7 1.3 Ω

- 8.5 - S

- 0.7 1.0 V

VDS = VGS, ID = 250μA

VGS = 10V, ID = 4.5A

VDS = 40V, ID = 4.5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

C

oss

C

rss

R
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time

Q
Q

t

D(on

t

D(off

t

t

t

Q

Notes: 5. Device mounted on an infinite heatsink.

6. Drain current limited by maximum junction temperature.

7. Repetitive rating, pulse width limited by junction temperature.

8. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

iss

s

d

f

r

- 2310 -

-

-

-

-

-

-

-

-

-

-

-

-

122

2.2

2.2
39

8.5

11.9
39
29

122

28

570

4.17

V

-

pF

-

- Ω

-

-

nC

-

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

GS

I

D

- ns

- ns

- ns

V

GS

R

G

- ns

- ns

-

dI/dt = 100A/µs, V
I

μC

F

= 8A Body Diode Reverse Recovery Charge

= 25V, VGS = 0V,

= 10V, VDS = 520V,

= 8A

= 10V, VDS = 325V,

= 25Ω, ID = 8A

DS

= 100V,

DMG9N65CTI

Document number: DS36027 Rev. 3 - 2

2 of 5

www.diodes.com

January 2013

© Diodes Incorporated

RAIN CUR

REN

T

RAIN CUR

R

N

T

R

R

OUR

CE ON-R

TANC

R

R

OUR

CE ON-R

TANC

R

R

OUR

C

R

RAIN

OUR

CE O

N

R

T

N

C

DMG9N65CTI

10

V = 10VDS

1

(A)

D

I, D

04 8121620

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristic

2.0

Ω

E ( )

(A)

E

0.1

D

I, D

0.01

0.001
01 2 34 56

V , GATE-SOURCE VOLTAGE

GS

T = 125°C

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

A

Fig. 2 Typical Transfer Characteristi cs

4

Ω

E ( )

V = 10V

GS

1.5

ESIS

1.0

AIN-S

0.5

V = 10VGS

V = 20VGS

, D

DS(ON)

0

02 4 6 810

I , DRAIN-SOURCE CURRENTD
Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

3.0

2.5

E

V=V

10

GS

I= 5A

D

2.0

V=V

GS

I = 10A

1.5

AIN-S

D

, D

1.0

DS(ON)

15

3

ESIS

T = 150°C

2

AIN-S

1

, D

DS(ON)

0

02 4 6 810

I , DRAIN CURRENT

D

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

3.0

Ω

E ( )

2.5

A

ESIS

2.0

-

V=V

10

GS

I= 5A

D

1.5

V=V

15

-S

1.0

GS

I = 10A

D

0.5

0.5

ON-RESISTANCE (NORMALIZED)

0

50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On-Resistance Variation with Temperature

, D

DS(ON)

0

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 On-Resistance Variation with Temperature

DMG9N65CTI

Document number: DS36027 Rev. 3 - 2

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January 2013

© Diodes Incorporated

GATE THRESH

O

OLT

G

OUR

CE CUR

REN

T

DMG9N65CTI

6

E (V)
A

5

LD V

I= 1mA

4

D

10

8

(V)

T= 25°C

6

A

4

I = 250µA

D

3

GS(th)

V,

2

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

S

I, S

2

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D1

P

Ø

L1

E

B

Q

B

D

b1 3x

b 3x

5

L

e

e

5

°

°

5

°

°

5

DMG9N65CTI

Document number: DS36027 Rev. 3 - 2

°

3

°

0

5

SECTION B-B

5

A

°

A1

3

5
°

°

5

ITO-220AB

Dim Min Typ Max

5°

°

5

5°

A 4.50 4.70 4.90
A1 3.04 3.24 3.44
A2 2.56 2.76 2.96

b 0.50 0.60 0.75

b1 1.10 1.20 1.35

c 0.50 0.60 0.70

A2

D 15.67 15.87 16.07
D1 8.99 9.19 9.39

e 2.54

E 9.91 10.11 10.31

L 9.45 9.75 10.05

c

Ø

P

L1 15.80 16.00 16.20

P 2.98 3.18 3.38

Q 3.10 3.30 3.50

All Dimensions in mm

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

DMG9N65CTI

DMG9N65CTI

Document number: DS36027 Rev. 3 - 2

5 of 5

www.diodes.com

January 2013

© Diodes Incorporated