Diodes DMG9N65CT User Manual

A



Product Summary

I

V

R

(BR)DSS

650V

V

DS(ON)

= 10V

GS

Package

TO-220AB 9.0 A

D

TC = +25°C

Description

This new generation complementary dual MOSFET features low on­resistance and fast switching, making it ideal for high efficiency power
management applications.

Applications

 Motor Control
 Backlighting
 DC-DC Converters
 Power Management Functions

Top View

TO-220AB

Bottom View

Green

DMG9N65CT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low Input Capacitance
 High BVDss rating for power application
 Low Input/Output Leakage
 Lead-Free Finish; RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO-220AB
 Case Material: Molded Plastic, “Green” Molding Compound, UL

Flammability Classification Rating 94V-0

 Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram Below
 Weight: TO-220AB – 1.85 grams (approximate)

D

G

S

Equivalent Circuit

Top View

Pin Out Configuration

Ordering Information (Note 4)

Part Number Case Packaging

DMG9N65CT TO-220AB 50 pieces/tube

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

9N65CT

YYWW AB

9N65CT = Product Type Marking Code

YYWW = Date Code Marking
YY = Last two digits of year (ex: 11 = 2011)
WW = Week (01 - 53)

B = Foundry and Assembly Code

DMG9N65CT

Document number: DS35619 Rev. 6 - 2

1 of 6

www.diodes.com

February 2013

© Diodes Incorporated

)

)

g

g

g

)

r

)

r

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Pulsed Drain Current (Note 6)

Steady

State

T

= +25°C

C

= +70°C

T

C

V
V

DSS

GSS

I

I

DM

Avalanche Current (Note 7) VDD = 100V, VGS = 10V, L = 60mH IAR
Repetitive Avalanche Energy (Note 7) VDD = 100V, VGS = 10V, L = 60mH EAR

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 5) TC = +25°C
T

= +70°C

C

Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

P

R

θJC

T

, T

J

D

D

STG

DMG9N65CT

650 V
±30 V

9.0

7.0

A

30 A

2.7 A

260 mJ

165
100

0.7

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

650 — — V

— — 1.0 µA
— — ±100 nA

VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V

VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage

V

R

DS (ON

|Y
V

GS(th

fs

SD

|

3 — 5 V
—
—
—

0.7 1.3 Ω

8.5 — S

0.7 1.0 V

VDS = VGS, ID = 250μA
VGS = 10V, ID = 4.5A
VDS = 40V, ID = 4.5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

C

oss

C

rss

R
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time

t

t

Q
Q

D(on

t

D(off

t

t

Q

Notes: 5. Device mounted on an infinite heatsink

6. Repetitive rating, pulse width limited by junction temperature.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

—

iss

2310
— 122 —
— 2.2 —
— 2.2 —
— 39 —
— 8.5 —

s

d

f

r

— 11.9 —
— 39 —
— 29 —
— 122 —
— 28 —
— 570 —
— 4.17 —

—

= 25V, VGS = 0V,

V

pF

Ω

nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= 10V, VDS = 520V,

V

GS

= 8A

I

D

ns
ns

V

= 10V, VDS = 325V,

GS

R

ns

= 25Ω, ID = 8A

G

ns
ns

dI/dt = 100A/µs, V
I

µC

= 8A Body Diode Reverse Recovery Charge

F

= 100V,

DS

DMG9N65CT

Document number: DS35619 Rev. 6 - 2

2 of 6

www.diodes.com

February 2013

© Diodes Incorporated