Diodes DMG9933USD User Manual

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

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Top View

S1

G1

S2

G2

Internal Schematic

Top View

DMG9933USD

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072 grams (approximate)

SO-8

D

2

S

2

D1 D1

D2 D2

D

1

G

1

S

1

P-Channel MOSFET P-Channel MOSFET

G

2

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 3) VGS = -4.5V Pulsed Drain Current (Note 4)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @T Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMG9933USD

Document number: DS32085 Rev. 2 - 2

T

Steady

State

= 25°C R

A

= 25°C

A

T

= 85°C

A

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V

DSS

V

GSS

I

D

I

DM

P

D

θJA

T

, T

J

STG

-20 V

±12

-4.6

-3

V A

-20 A

1.15 W 109 °C/W

-55 to +150 °C

June 2010

)

g

)

r

)

R

C

U

R

T

RAIN CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance

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Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

10

V = -8.0V

8

GS

V = -4.5V

GS

V = -3.0V

GS

V = -2.5V

GS

(A)

6

EN

V = -2.0V

GS

BV

V

R

DSS

I

GSS

GS(th

DS (ON)

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R Q

Q

s

Q

d

t

D(on

t

D(off

t

f

-20 - - V

- - -1.0

- - ±100 nA

-0.45 - -1.1 V

-

55 76

75

110

- 10 - S

- -0.8 -1.2 V

- 608.4 - pF

- 81.5 - pF

- 72.4 - pF

- 44.91 -

- 6.5 - nC

- 0.9 - nC

- 1.5 - nC

- 12.45 - ns

- 10.29 - ns

- 46.52 - ns

- 22.19 - ns

10

V = -5V

DS

8

(A)

6

DMG9933USD

VGS = 0V, ID = -250μA

μA

mΩ

Ω

= -16V, VGS = 0V

V

DS

VGS = ±12V, VDS = 0V

VDS = VGS, ID = -250μA

= -4.5V, ID = -4.8A

V

GS

VGS = -2.5V, ID = -1A VDS = -9V, ID = -3.4A VGS = 0V, IS = -2A

V

= -6V, VGS = 0V

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz V

= -10V, VGS = -4.5V,

DS

= -3.2A

I

D

V

= -10V, VGS = -4.5V,

DS

R

= 10Ω, RG = 1Ω, ID = -1A

L

4

AIN

D

-I , D 2

0

0 0.5 1 1.5 2 2.5 3

-V , DRAIN-SOURCE VOLTAGE (V)

DS

V = -1.5V

GS

V = -1.2V

GS

Fig. 1 Typical Output Characteristics

4

D

-I , D 2

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

T = 85°C

A

-V , GATE SOURCE VOLTAGE (V)

GS

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characteristics

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Document number: DS32085 Rev. 2 - 2

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R

OUR

CE ON-R

TANC

R

OUR

CE O

R

TANC

O

URCE C

U

R

N

T

NEW PRODUCT

DMG9933USD

0.25

Ω

E ( )

0.16

Ω

E ( )

V = 4.5V

GS

0.20

0.12

ESIS

0.15

0.10

AIN-S

0.05

, D

DS(ON)

0

0.1 1 10

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

-V = 1.8V

GS

-V = 2.5V

GS

-V = 4.5V

GS

vs. Drain C urrent an d G at e Vol tage

1.7

ESIS N-

AIN-S

0.08

0.04

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

, D

DS(ON)

0

0246 810

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain C urrent and Tem per ature

0.16

Ω

1.5

1.3

1.1

-V = 5.0V

GS

-I = 10A

D

0.9

DS(ON)

R , DRAIN-SOURCE

-V = 2.5V

ON-RESISTANCE (NORMALIZED)

0.7

0.5

GS

-I = 5.0A

D

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with Temperature

1.6

1.2

0.8

-I = 250µA

D

-I = 1mA

D

0.4

0.12

-V = 2.5V

GS

-I = 5.5A

D

-V = 5.0V

GS

-I = 10A

D

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

0.08

0.04

DS(ON)

Fig. 6 On-Resistance Variation with T emperature

10

8 (A) E

6

T = 25°C

A

4

S

-I , S

2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Thresh ol d Variation vs. Ambi ent Te m perature

0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLT AGE (V)

SD

Fig. 8 Diode Forwa r d Voltage vs. Curr ent

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C, CAPACITAN

C

F

R

OUR

C

GE CUR

RENT

T

R

T T

HER

R

TANC

NEW PRODUCT

DMG9933USD

(nA)

E LEAKA

10,000

1,000

100

T = 150°C

A

T = 125°C

A

T = 85°C

A

) E (p

1,000

100

f = 1MHz

C

iss

C

oss

C

rss

10

AIN-S

T = 25°C

A

10

048121620

-V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 9 Typical Total Capacitance

DSS

1

-I , D 04 8121620

-V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-S ource Volta ge

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = Single Pulse

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.005

D = 0.9

t , PULSE DURATION TIME (s)

1

R (t) = r(t) *

θ

JA

R = 156°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number Case Packaging

DMG9933USD-13 SO-8 2500 / Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

DMG9933USD

Document number: DS32085 Rev. 2 - 2

Top View

8 5

G9933UD

WW

YY

1 4

www.diodes.com

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Logo Part no.

Xth week: 01 ~ 53 Y ear: “09” = 2009

June 2010

Package Outline Dimensions

NEW PRODUCT

e

b

D

Suggested Pad Layout

DMG9933USD

Dim Min Max

E1

E

A1

Detail ‘A’

h

°

45

A2

A3

A

X

C1

C2

Y

L

0.254

Gaug e Plane Seating Plane

7°~9

°

Detail ‘A’

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

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Document number: DS32085 Rev. 2 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and

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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

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