Diodes DMG9933USD User Manual
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Top View
S1
G1
S2
G2
Internal Schematic
Top View
DMG9933USD
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
SO-8
D
2
S
2
D1
D1
D2
D2
D
1
G
1
S
1
P-Channel MOSFET P-Channel MOSFET
G
2
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3) VGS = -4.5V
Pulsed Drain Current (Note 4)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMG9933USD
Document number: DS32085 Rev. 2 - 2
T
Steady
State
= 25°C R
A
= 25°C
A
T
= 85°C
A
1 of 6
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V
DSS
V
GSS
I
D
I
DM
P
D
θJA
T
, T
J
STG
-20 V
±12
-4.6
-3
V
A
-20 A
1.15 W
109 °C/W
-55 to +150 °C
June 2010
© Diodes Incorporated
)
g
g
g
g
)
r
)
R
C
U
R
R
T
RAIN CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
NEW PRODUCT
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
10
V = -8.0V
8
GS
V = -4.5V
GS
V = -3.0V
GS
V = -2.5V
GS
(A)
6
EN
V = -2.0V
GS
BV
V
R
DSS
DSS
I
GSS
GS(th
DS (ON)
|Y
|
fs
V
SD
C
iss
C
oss
C
rss
R
Q
Q
s
Q
d
t
D(on
t
t
D(off
t
f
-20 - - V
- - -1.0
- - ±100 nA
-0.45 - -1.1 V
-
-
55
76
75
110
- 10 - S
- -0.8 -1.2 V
- 608.4 - pF
- 81.5 - pF
- 72.4 - pF
- 44.91 -
- 6.5 - nC
- 0.9 - nC
- 1.5 - nC
- 12.45 - ns
- 10.29 - ns
- 46.52 - ns
- 22.19 - ns
10
V = -5V
DS
8
(A)
6
DMG9933USD
VGS = 0V, ID = -250μA
μA
mΩ
Ω
= -16V, VGS = 0V
V
DS
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250μA
= -4.5V, ID = -4.8A
V
GS
VGS = -2.5V, ID = -1A
VDS = -9V, ID = -3.4A
VGS = 0V, IS = -2A
V
= -6V, VGS = 0V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= -10V, VGS = -4.5V,
DS
= -3.2A
I
D
V
= -10V, VGS = -4.5V,
DS
R
= 10Ω, RG = 1Ω, ID = -1A
L
4
AIN
D
-I , D
2
0
0 0.5 1 1.5 2 2.5 3
-V , DRAIN-SOURCE VOLTAGE (V)
DS
V = -1.5V
GS
V = -1.2V
GS
Fig. 1 Typical Output Characteristics
4
D
-I , D
2
0
0 0.5 1 1.5 2 2.5 3
T = 150°C
A
T = 125°C
A
T = 85°C
A
-V , GATE SOURCE VOLTAGE (V)
GS
T = 25°C
A
T = -55°C
A
Fig. 2 Typical Transfer Characteristics
DMG9933USD
Document number: DS32085 Rev. 2 - 2
2 of 6
www.diodes.com
June 2010
© Diodes Incorporated
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