Diodes DMG9926USD User Manual

Download

Page 1

485

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

(BR)DSS

24mΩ @ V

20V

29mΩ @ VGS = 2.5V

37mΩ @ VGS = 1.8V

DS(ON)

max

= 4.5V

Description

This MOSFET has been designed to minimize the on-state resistance (R performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

Applications

 Power Management Functions  DC-DC Converters 

) and yet maintain superior switching

DS(on)

TOP VIEW

max

TA = +25°C

5.5A

4.8A

Internal Schematic

TOP VIEW

DMG9926USD

Features

 Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

 Weight: 0.072g (approximate)

N-Channel MOSFET

Ordering Information (Note 4)

Part Number Case Packaging

DMG9926USD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N9926UD

Y WW

Chengdu A/T Site

N9926UD

Y W

Shanghai A/T Site

= Manufacturer’s Marking N9926UD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

DMG9926USD

Document number: DS31757 Rev. 5 - 2

1 of 6

www.diodes.com

February 2014

Page 2

)



)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Drain Current (Note 5) Steady State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient

NEW PRODUCT

Operating and Storage Temperature Range

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by function temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

= +25°C, unless otherwise specified.)

= +25°C

= +70°C

DSS

 

DSS

 

GSS

GS(th

DS (ON)



iss



oss



rss





d(on



d(off



0.5



0.5

DSS

GSS

θJA

J, TSTG

 

100



19 23 29



867

85 81

1.29

8.8

1.2 3

13.2

12.6

64.8

21.7

20 V 8

6.7

30 A

1.3 W 96 °C/W

-55 to +150 °C

1 μA

0.9 V

24 29 37



0.9 V

  



      

VGS = 8V, VDS = 0V

V V

mΩ

V V

V VGS = 0V, IS = 1A

f = 1MHz

Ω

VGS = 0V, VDS = 0V, f = 1MHz

nC nC

V nC ns ns

V ns

R ns

DMG9926USD

= 0V, ID = 250μA

= 20V, VGS = 0V

= VGS, ID = 250μA

= 4.5V, ID = 8.2A

= 2.5V, ID = 3.3A

= 1.8V, ID = 2A

= 10V, ID = 4A

= 15V, VGS = 0V

= 4.5V, VDS = 10V, ID = 8.2A

= 10V, V

= 10, RG = 6Ω

= 4.5V,

DMG9926USD

Document number: DS31757 Rev. 5 - 2

2 of 6

www.diodes.com

February 2014

Page 3

RAIN CUR

REN

OUR

CE ON-R

TANC

NEW PRODUCT

DMG9926USD

(A)

V = 8.0V

V = 4.5V

V = 3.0V

V = 2.5V

V = 2.0V

V = 5V

(A)

V = 1.5V

V = 1.2V

0 0.4 0.8 1.2 1.6 2.0

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0.5 1 1.5 2 2.5 V , GATE SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

0.06



0.05

V = 1.8V

0.05



E ( )

V = 4.5V

0.04

0.03

V = 2.5V

0.02

V = 4.5V

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.8

1.6

1.4

V = 2.5V

I = 5A

1.2

1.0

DS(ON)

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

V = 4.5V

I = 8.2A

ESIS

T = 150°C

0.03

AIN-S

, D

0.02

0.01

DS(ON)

T = 125°C

T = 85°C

T = 25°C

T = -55°C

04 8121620

I , DRAIN CURRENT (A)

Fig. 4 Typical Dr ain-Source On-Resistance

vs. Drain Current and Temperature

0.05



0.04

V = 2.5V

0.03

0.02

I = 5A

V = 4.5V

I = 8.2A

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

DMG9926USD

Document number: DS31757 Rev. 5 - 2

3 of 6

www.diodes.com

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

February 2014

Page 4

OUR

CE C

C, CAPACITANC

OUR

GE CUR

RENT

T T

TANC

NEW PRODUCT

DMG9926USD

1.2

1.0

0.8

I = 1mA

(A)

T = 25°C

I = 250µA

0.6

0.4

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150

Fig. 7 Gate Thr eshold Variation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

0.1

I, S

0.01

0.4 0.5 0.6 0.7 0.8 0.9 1 V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

10,000

)

1,000

E (p

100

f = 1MHz

iss

oss

rss

10,000

(nA)

1,000

E LEAKA

AIN-S

100

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

DSS

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Capacitance

I, D

0.1 0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

D = 0.7

D = 0.5

D = 0.1

ESIS

0.1

D = 0.05

MAL E

0.01

ANSIEN

r(t),

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *



R = 99°C/W

P(pk)

T - T = P * R (t)

JA JA12

Duty Cycle, D = t /t

JA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

Fig. 11 Transient Thermal Response

DMG9926USD

Document number: DS31757 Rev. 5 - 2

4 of 6

www.diodes.com

February 2014

Page 5

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

NEW PRODUCT

Detail ‘A’

0.254

7°~9

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dim Min Max

A - 1.75

Gauge Plan e Seating Plane

Detail ‘A’

Dimensions Value (in mm)

X 0.60

Y 1.55 C1 5.4 C2 1.27

A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5 D 4.85 4.95 E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ h - 0.35 L 0.62 0.82

All Dimensions in mm



DMG9926USD

SOP-8L

0 8

DMG9926USD

Document number: DS31757 Rev. 5 - 2

5 of 6

www.diodes.com

February 2014

Page 6

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

NEW PRODUCT

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG9926USD

Document number: DS31757 Rev. 5 - 2

6 of 6

www.diodes.com

February 2014