Diodes DMG9926USD User Manual

4

8

5

Y

W

485

Y

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

V

R

(BR)DSS

24mΩ @ V

20V

29mΩ @ VGS = 2.5V

37mΩ @ VGS = 1.8V

DS(ON)

max

= 4.5V

GS

Description

This MOSFET has been designed to minimize the on-state
resistance (R
performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

Applications

 Power Management Functions
 DC-DC Converters


) and yet maintain superior switching

DS(on)

TOP VIEW

I

max

D

TA = +25°C

8A

5.5A

4.8A

S1

G1

S2

G2

Internal Schematic

TOP VIEW

DMG9926USD

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D
 Terminals Connections: See Diagram
 Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

 Weight: 0.072g (approximate)

D2

S2

D1

D1

D2

D2

D1

G1

S1

N-Channel MOSFET

G2

N-Channel MOSFET

Ordering Information (Note 4)

Part Number Case Packaging

DMG9926USD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N9926UD

Y WW

1

Chengdu A/T Site

N9926UD

Y W

1

Shanghai A/T Site

= Manufacturer’s Marking
N9926UD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

DMG9926USD

Document number: DS31757 Rev. 5 - 2

1 of 6

www.diodes.com

February 2014

© Diodes Incorporated

)

g



g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) Steady
State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient

NEW PRODUCT

Operating and Storage Temperature Range

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by function temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

= +25°C, unless otherwise specified.)

A

T

= +25°C

A

= +70°C

T

A

BV

DSS

I

 

DSS

I

 

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C



iss

C



oss

C



rss

R



G

Q



Q



s

Q



d

t



d(on

t



t



d(off

t



f

20

0.5





0.5

V

DSS

V

GSS

I

D

I

DM

P

D

R

θJA

T

J, TSTG

 

100



19
23
29

7



867

85
81

1.29

8.8

1.2
3

13.2

12.6

64.8

21.7

20 V
8

8

6.7

30 A

1.3 W
96 °C/W

-55 to +150 °C

V

V

1 μA

0.9 V

24
29
37



0.9 V















V

nA

VGS = 8V, VDS = 0V

V
V

mΩ

V
V

S

V
VGS = 0V, IS = 1A

pF

V

pF

f = 1MHz

pF

Ω

VGS = 0V, VDS = 0V, f = 1MHz

nC
nC

V
nC
ns
ns

V
ns

R
ns

DMG9926USD

V

A

= 0V, ID = 250μA

GS

= 20V, VGS = 0V

DS

= VGS, ID = 250μA

DS

= 4.5V, ID = 8.2A

GS

= 2.5V, ID = 3.3A

GS

= 1.8V, ID = 2A

GS

= 10V, ID = 4A

DS

= 15V, VGS = 0V

DS

= 4.5V, VDS = 10V, ID = 8.2A

GS

= 10V, V

DD

= 10, RG = 6Ω

L

GS

= 4.5V,

DMG9926USD

Document number: DS31757 Rev. 5 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated