Diodes DMG8880LK3 User Manual
D
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
TO252-3L
Top View
Mechanical Data
• Case: TO252-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.33 grams (approximate)
D
GS
PIN OUT -TOP VIEW
DMG8880LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
UL Flammability Classification Rating 94V-0
D
G
S
Equivalent Circuit
Ordering Information (Note 3)
Part Number Case Packaging
DMG8880LK3-13 TO252-3L 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMG8880LK3
Document number: DS32052 Rev. 4 - 2
G8880L
YYWW
G8880L = Product Type Marking Code
= Manufacturer’s Marking
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 ~ 53)
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December 2010
© Diodes Incorporated
)
g
g
g
g
)
r
)
r
r
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
T
Steady
State
Steady
State
= 25°C (Note 4) R
A
= 25°C (Note 5) R
A
= 25°C
A
T
= 85°C
A
T
= 25°C
A
= 85°C
T
A
DMG8880LK3
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
θJA
P
D
θJA
, T
T
J
STG
30 V
±20 V
11
8
16.5
12
A
A
48 A
1.68 W
74.3 °C/W
4.1 W
30.8 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
30 - - V
- - 1.0
- - ±100 nA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
1.2 1.5 2.3 V
-
|
- 22 - S
- 0.7 1.0 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature and current limited by package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
t
t
C
oss
rss
R
Q
Q
Q
Q
D(on
t
D(off
t
t
Q
iss
g
s
d
f
r
r
- 1289 - pF
- 187 - pF
- 162 - pF
- 0.97 -
- 27.6 - nC
- 14.4 - nC
- 3.6 - nC
- 4.9 - nC
- 7.04 - ns
- 17.52 - ns
- 36.13 - ns
- 19.67 - ns
- 17.6 - ns
- 65.9 - nC
VGS = 0V, ID = 250μA
μA
= 30V, VGS = 0V
V
DS
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
= 10V, ID = 11.6A
5
8
7.5
12
V
mΩ
GS
VGS = 4.5V, ID = 10.7A
VDS = 15V, ID = 15A
VGS = 0V, ISD = 2.1A
V
= 15V, VGS = 0V,
DS
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
V
= 10V, VDS = 15V,
GS
I
= 11.6A, Ig = 1.0mA
D
V
= 5V, VDS = 15V,
GS
I
= 11.6A
D
= 15V, VGS = 10V,
V
DD
= 11Ω, ID = 11.6A,
R
G
R
= 1.3Ω
L
IF = 20A, dl/dt = 500A/μs
IF = 20A, dl/dt = 500A/μs
DMG8880LK3
Document number: DS32052 Rev. 4 - 2
2 of 6
www.diodes.com
December 2010
© Diodes Incorporated
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