Diodes DMG8822UTS User Manual

Please click here to visit our online spice models database.

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 3)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

TOP VIEW

BOTTOM VIEW

DMG8822UTS

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: TSSOP-8L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram Below

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.039 grams (approximate)

D1 D2

G1

1

D
S1

2

S1

3

G1

4

Top View

Pin Configuration

G2

8

D
S2

7

S2

6
5

S1 S2

G2

Internal Schematic

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 1)

Steady

State

Pulsed Drain Current (Note 2)

Thermal Characteristics

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient @TA = 25°C R
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

2. Repetitive rating, pulse width limited by junction temperature.

3. No purposefully added lead.

DMG8822UTS

Document number: DS31798 Rev. 2 - 2

Characteristic Symbol Value Unit

T

= 25°C

A

= 70°C

T

A

www.diodes.com

1 of 6

V

DSS

V

GSS

I

D

I

DM

P

D

JA

, T

T

J

STG

20 V
±8 V

4.9

3.9

A

31 A

0.87 W
143 °C/W

-55 to +150 °C

June 2009

© Diodes Incorporated

)

g

g

g

g

r

R

C

U

R

RENT

R

N

C

U

R

R

N

T

DMG8822UTS

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

20 - - V

- - 1.0 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diodes Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 0.9 V

-

22
28

19

|

- 7 - S

- 0.7 0.9 V

25
29
37

VDS = VGS, ID = 250A

V

= 4.5V, ID = 8.2A

m

GS

VGS = 2.5V, ID = 3.3A

VGS = 1.8V, ID = 2.0A

VDS = 10V, ID = 4A

Is = 2.25A, VGS = 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance

NEW PRODUCT

Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

- 841 -

- 88 -

- 81 -

- 1.24 -

pF

V

= 10V, VGS = 0V,

pF
pF



DS

f = 1.0MHz

VDS =0V, VGS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effects.

6. Guaranteed by design. Not subject to production testing.

Q
Q
Q

t

D(on)

t

D(off)

s
d

t

t

f

- 9.6 -

- 1.4 -

- 2.1 -

7.8

-

21.1

-

38.6

-

10.1

-

nC

V

nC
nC

GS

I

= 8.2A

D

- ns

- ns

- ns

V

DD

R

L

- ns

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

= 10, RG = 6

20

V = 5V

15

DS

(A)

(A)

30

20

V = 4.5V

GS

V = 3.5V

GS

V = 3.0V

GS

V = 2.8V

GS

V = 2.5V

GS

V = 2.0V

GS

V = 1.8V

GS

E

10

AIN

D

I, D

10

V = 1.5V

GS

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Char acteristics

AI

T = 150°C

D

I, D

5

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0 0.5 1 1.5 2 2.5 3

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMG8822UTS

Document number: DS31798 Rev. 2 - 2

2 of 6

www.diodes.com

June 2009

© Diodes Incorporated

R

R

OUR

CE ON-R

TANC

R

RAIN-SOUR

C

O

N

R

TAN

C

R

RAIN-SOUR

CE O

N-R

TAN

C

G

T

T

H

R

H

O

OLT

G

OUR

CE C

U

R

R

N

T

NEW PRODUCT

DMG8822UTS

0.05

Ω

E ( )

0.04

ESIS

V = 1.8V

0.03

0.02

GS

V= 2.5V

GS

V= 4.5V

GS

AIN-S

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent and G at e Vol t age

1.7

0.05

Ω

E ( )

V = 4.5V

GS

0.04

ESIS

­E

, D

0.03

0.02

0.01

DS(ON)

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0 5 10 15 20

I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain C urrent and Temperature

0.04

Ω

E ( )

1.5

1.3

1.1

V = 2.5V

GS

I = 5A

D

V = 4.5V

GS

I = 10A

D

0.03

ESIS

0.02

V = 2.5V

GS

I = 5A

D

V = 4.5V

GS

I = 10A

D

0.9

DS(ON)

R , DRAIN-SOURCE

0.7

ON-RESISTANCE (NORMALIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with Temperature

1.2

E (V)

1.0

A

0.8

LD V

I = 1mA

0.6

ES

E

0.4

A

0.2

GS(TH)

V,

I = 250µA

D

D

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

0.01

, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature
20
18
16

(A)

14

E

12

T = 25°C

10

A

8
6

S

I, S

4
2

0

0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

DMG8822UTS

Document number: DS31798 Rev. 2 - 2

3 of 6

www.diodes.com

June 2009

© Diodes Incorporated

C, CAPACIT

N

C

F

R

OUR

C

G

CUR

R

T

T

R

T T

HER

R

TANC

NEW PRODUCT

DMG8822UTS

10,000

f = 1MHz

10,000

(nA)

T = 150°C

A

EN

)

1,000

E (p
A

C

iss

E

1,000

T = 125°C

A

100

C

100

oss

C

rss

10

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Capacitance

E LEAKA

10

AIN-S

DSS

1

I, D

2 4 6 8 10 12 14 16 18 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-S ource Voltage

T = 85°C

A

T = 25°C

A

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

0.01

ANSIEN

r(t),

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 141°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number Case Packaging

DMG8822UTS-13 TSSOP-8L 2500 / Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

8

N8822U

YY WW

1

Top View

DMG8822UTS

Document number: DS31798 Rev. 2 - 2

5

Logo

Part no

Xth week: 01~52

Year: “09” = 2009

4

4 of 6

www.diodes.com

June 2009

© Diodes Incorporated

Package Outline Dimensions

e

NEW PRODUCT

A

Suggested Pad Layout

D

E

E1

b

A2

D

Y

C3 C1

C2

A1

X

G

c

See Detail C

Gauge plane

a

L

Detail C

TSSOP-8L

Dim Min Max Typ

a 0.09
A

A1 0.05 0.15

− −

1.20

−

−

−

A2 0.825 1.025 0.925

b 0.19 0.30
c 0.09 0.20

−

−

D 2.90 3.10 3.025
e

− −

E

− −

0.65

6.40

E1 4.30 4.50 4.425

L 0.45 0.75 0.60
All Dimensions in mm

Dimensions Value (in mm)

X 0.45

Y 1.78
C1 7.72
C2 0.65
C3 4.16

G 0.20

DMG8822UTS

DMG8822UTS

Document number: DS31798 Rev. 2 - 2

5 of 6

www.diodes.com

June 2009

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG8822UTS

DMG8822UTS

Document number: DS31798 Rev. 2 - 2

6 of 6

www.diodes.com

June 2009

© Diodes Incorporated