Diodes DMG8822UTS User Manual
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Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
TOP VIEW
BOTTOM VIEW
DMG8822UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: TSSOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram Below
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.039 grams (approximate)
D1 D2
G1
1
D
S1
2
S1
3
G1
4
Top View
Pin Configuration
G2
8
D
S2
7
S2
6
5
S1 S2
G2
Internal Schematic
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 2)
Thermal Characteristics
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C R
Operating and Storage Temperature Range
Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
Characteristic Symbol Value Unit
T
= 25°C
A
= 70°C
T
A
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1 of 6
V
DSS
V
GSS
I
D
I
DM
P
D
JA
, T
T
J
STG
20 V
±8 V
4.9
3.9
A
31 A
0.87 W
143 °C/W
-55 to +150 °C
June 2009
© Diodes Incorporated
)
g
g
g
g
r
R
C
U
R
RENT
R
N
C
U
R
R
N
T
DMG8822UTS
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
20 - - V
- - 1.0 A
- - ±100 nA
VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diodes Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.5 - 0.9 V
-
22
28
19
|
- 7 - S
- 0.7 0.9 V
25
29
37
VDS = VGS, ID = 250A
V
= 4.5V, ID = 8.2A
m
GS
VGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
VDS = 10V, ID = 4A
Is = 2.25A, VGS = 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
NEW PRODUCT
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
- 841 -
- 88 -
- 81 -
- 1.24 -
pF
V
= 10V, VGS = 0V,
pF
pF
DS
f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
Q
Q
Q
t
D(on)
t
D(off)
s
d
t
t
f
- 9.6 -
- 1.4 -
- 2.1 -
7.8
-
21.1
-
38.6
-
10.1
-
nC
V
nC
nC
GS
I
= 8.2A
D
- ns
- ns
- ns
V
DD
R
L
- ns
= 4.5V, VDS = 10V,
= 10V, VGS = 4.5V,
= 10, RG = 6
20
V = 5V
15
DS
(A)
(A)
30
20
V = 4.5V
GS
V = 3.5V
GS
V = 3.0V
GS
V = 2.8V
GS
V = 2.5V
GS
V = 2.0V
GS
V = 1.8V
GS
E
10
AIN
D
I, D
10
V = 1.5V
GS
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Char acteristics
AI
T = 150°C
D
I, D
5
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0 0.5 1 1.5 2 2.5 3
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
2 of 6
www.diodes.com
June 2009
© Diodes Incorporated
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