Diodes DMG8601UFG User Manual

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

Top View

U-DFN3030-8

Bottom View

DMG8601UFG

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: U-DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper lead frame. Solderable

per MIL-STD-202, Method 208

• Polarity: See Diagram

• Weight: 0.0172 grams (approximate)

5678

D1/D2

S1G1S2G2

4321

Bottom View

Pin Configuration

e4

Top View

Equivalent Circuit

5678

4321

Ordering Information (Note 4)

Part Number Case Packaging

DMG8601UFG-7 U-DFN3030-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

YYWW

2N4

www.diodes.com

2N4 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)

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September 2012

© Diodes Incorporated

)

g

g

g

g

r

DMG8601UFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V

Continuous Drain Current (Note 5)

Steady

State

A = +25°C

T
T

A = +70°C

I

D

6.1

5.2

A

Pulsed Drain Current IDM 27 A

Thermal Characteristics

Power Dissipation (Note 5) PD 0.92 W
Thermal Resistance, Junction to Ambient @TA = +25°C RθJA 136 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

NEW PRODUCT

Characteristic Symbol Value Unit

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
Gate-Source Breakdown Voltage

BV

BV

DSS

I

GSS

DSS

SGS

20 - - V

- - 1.0

- - ±10

±12 - - V

VGS = 0V, ID = 250μA

μA
μA

= 20V, VGS = 0V

V

DS

= ±10V, VDS = 0V

V

GS

VDS = 0V, IG = ±250μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.35 - 1.05 V

-

-

-

|

- 10 - S

- 0.7 1.0 V

17
20
25

23
27
34

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 6.5A

mΩ

GS

VGS = 2.5V, ID = 5.5A

VGS = 1.8V, ID = 3.5A

VDS = 10V, ID = 5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

C

C

oss

C

rss

R

Q
Q
Q

t

D(on)

t

t

D(off)

t

iss

s
d

f

-

-

-

74
29

- 202 -

8.8

-

1.4

-

3.0

-

-

-

-

-

53

78
562
234

- pF

- pF

- pF

- nC

- nC

- nC

V

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
V

GS

= 6.5A

I

D

- ns

- ns

- ns

V

DD

R

= 10Ω, RG = 6Ω

L

- ns

= 10V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

143

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

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R

CUR

RENT

R

CUR

RENT

R

RAIN-SOUR

CE O

N-R

TAN

C

5

R

R

OUR

CE ON-R

TANC

R

RAIN

OUR

C

O

N-R

TAN

C

NEW PRODUCT

DMG8601UFG

40

V = 8.0V

GS

36
32
28

(A)

V = 4.5V

GS

V = 3.0V

GS

V = 2.5V

GS

30

V = 5V

25

(A)

20

DS

24
20

16

AIN

12

D

I, D

8

V = 2.0V

GS

4
0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acteristic

0.05

Ω

E ( )

0.04

15

AIN

10

D

I, D

T = 150°C

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

T = 85°C

A

0.0

Ω

E ( )

0.04

V = 4.5V

GS

ESIS

0.03

V = 1.8V

GS

0.02

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

V = 2.5V

GS

V = 4.5V

GS

vs. Drain Current and Gate Voltage

1.7

1.5

V = 2.5V

GS

I = 5.5A

1.3

D

1.1

0.9

DSON

R , DRAIN-SOURCE

0.7

ON-RESISTA NCE (NORMA LIZED)

V = 5.0V

GS

I = 10A

D

ESIS

0.03

0.02

AIN-S

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C urrent and Tempera tu r e

0.05

Ω

E ( )

0.04

ESIS

0.03

V = 2.5V

GS

I = 5.5A

D

E

0.02

-S

0.01

, D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V = 5.0V

GS

I = 10A

D

DSON

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

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OUR

CE CUR

REN

T

GE CUR

REN

T

GE CUR

RENT

GE C

U

R

R

N

T

NEW PRODUCT

DMG8601UFG

1.6

1.2

20

16

T = 25°C

A

(A)

12

I = 1mA

I = 250µA

D

D

8

S

I, S

4

0

0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10,000

0.8

0.4

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

100,000

10,000

(nA)

1,000

DSS

I , LEAKA

100

10

T = 85°C

T = 25°C

A

T = 150°C

A

T = 125°C

A

A

1

04 8121620

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 9 Typical Leakag e C ur r ent vs. Dra in - Source Volt age

10,000

T = 150°C

(nA)

1,000

T = 125°C

A

A

E

100

T = 85°C

A

T = 150°C

1,000

(nA )

T = 125°C

A

100

10

GSS

I, LEAKA

1

12345678

V , GATE-SO URCE VOLTAGE (V)

GS

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 10 Gat e-Source Leakage Current vs . Voltage

T = 25°C

A

10

GSS

I , LEAKA

1

12345678

-V , GATE-SO URCE VOLTAGE (V)

GS

T = -55°C

A

Fig. 11 Gat e- Source Leakage Cur r ent vs. V oltag e

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

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T

R

T T

HER

R

TANC

DMG8601UFG

1

E

D = 0.7

D = 0.5
D = 0.3

ESIS

0.1

MAL

ANSIEN

r(t),

0.01

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 136°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Fig. 12 Transient Thermal Response

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

A1

e

b

SEATING PLANE

A3

0

0

2

.

0

R

E

E2

D2

D

L

U-DFN3030-8

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.02
A3

⎯ ⎯

0.15

b 0.29 0.39 0.34
D 2.90 3.10 3.00

D2 2.19 2.39 2.29

e

⎯ ⎯

0.65

E 2.90 3.10 3.00

E2 1.64 1.84 1.74

L 0.30 0.60 0.45

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X2

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

Z

X1

G

YC

Dimensions Value (in mm)

Z 2.59

G 0.11
X1 2.49
X2 0.65

Y 0.39

C 0.65

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG8601UFG

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

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