Diodes DMG8601UFG User Manual

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

Top View

U-DFN3030-8

Bottom View

DMG8601UFG

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: U-DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper lead frame. Solderable

per MIL-STD-202, Method 208

• Polarity: See Diagram

• Weight: 0.0172 grams (approximate)

5678

D1/D2

S1G1S2G2

4321

Bottom View

Pin Configuration

e4

Top View

Equivalent Circuit

5678

4321

Ordering Information (Note 4)

Part Number Case Packaging

DMG8601UFG-7 U-DFN3030-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

YYWW

2N4

www.diodes.com

2N4 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)

1 of 6

September 2012

© Diodes Incorporated

)

g

g

g

g

r

DMG8601UFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V

Continuous Drain Current (Note 5)

Steady

State

A = +25°C

T
T

A = +70°C

I

D

6.1

5.2

A

Pulsed Drain Current IDM 27 A

Thermal Characteristics

Power Dissipation (Note 5) PD 0.92 W
Thermal Resistance, Junction to Ambient @TA = +25°C RθJA 136 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

NEW PRODUCT

Characteristic Symbol Value Unit

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
Gate-Source Breakdown Voltage

BV

BV

DSS

I

GSS

DSS

SGS

20 - - V

- - 1.0

- - ±10

±12 - - V

VGS = 0V, ID = 250μA

μA
μA

= 20V, VGS = 0V

V

DS

= ±10V, VDS = 0V

V

GS

VDS = 0V, IG = ±250μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.35 - 1.05 V

-

-

-

|

- 10 - S

- 0.7 1.0 V

17
20
25

23
27
34

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 6.5A

mΩ

GS

VGS = 2.5V, ID = 5.5A

VGS = 1.8V, ID = 3.5A

VDS = 10V, ID = 5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Short duration pulse test used to minimize self-heating effect.

C

C

oss

C

rss

R

Q
Q
Q

t

D(on)

t

t

D(off)

t

iss

s
d

f

-

-

-

74
29

- 202 -

8.8

-

1.4

-

3.0

-

-

-

-

-

53

78
562
234

- pF

- pF

- pF

- nC

- nC

- nC

V

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
V

GS

= 6.5A

I

D

- ns

- ns

- ns

V

DD

R

= 10Ω, RG = 6Ω

L

- ns

= 10V, VGS = 0V,

= 4.5V, VDS = 10V,

= 10V, VGS = 4.5V,

143

DMG8601UFG

Document number: DS31788 Rev. 5 - 2

2 of 6

www.diodes.com

September 2012

© Diodes Incorporated