Diodes DMG7702SFG User Manual
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
I
D
TA = +25°C
12 A
9.5A
V
R
(BR)DSS
30V
10m @ V
15m @ VGS = 4.5V
Package
DS(ON)
= 10V
GS
POWERDI3333-8
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
Top View
D
D
D
D
Bottom View
S
S
DMG7702SFG
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low R
Low V
Low Q
diode switching losses
Low gate capacitance (Q
through or cross conduction currents at high frequencies
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
– minimize conduction losses
DS(ON)
– reducing the losses due to body diode conduction
SD
– lower Qrr of the integrated Schottky reduces body
rr
) ratio – reduces risk of shoot-
g/Qgs
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate
Pin 1
S
G
8765
234
1
Top View
Pin Configuration
Gate
Internal Schematic
POWERDI
Drain
Source
®
Ordering Information (Note 4)
Part Number Case Packaging
DMG7702SFG-7 POWERDI3333-8 2000/Tape & Reel
DMG7702SFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com.
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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© Diodes Incorporated
July 2012
θ
Marking Information
Maximum Ratings (@T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
YYWW
G72
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Steady
State
t<10s
Steady
State
t<10s
G72 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
V
DSS
V
GSS
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
I
D
I
D
I
D
I
D
I
DM
I
S
I
AR
E
AR
DMG7702SFG
30 V
±20 V
12
9.5
16.0
12.7
9.5
7.5
13.0
10.3
90 A
3.5 A
17 A
43 mJ
A
A
A
A
Thermal Characteristics
Characteristic Symbol Value Units
T
= +25°C
2 of 8
A
TA = +70°C
Steady state
t<10s 74
T
= +25°C
A
TA = +70°C
Steady state
t<10s 31
P
R
P
R
R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
AR
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0.89
0.55
145
2.2
1.3
W
°C/W
W
58
°C/W
11
-55 to +150 °C
July 2012
© Diodes Incorporated
RAIN
C
URREN
T
P, P
T
R
T P
O
R
T
R
T T
HER
R
TANC
100
R
DS(on)
Limited
P = 10sWµ
100
90
(W)
80
10
(A)
DC
P = 10s
W
1
D
0.1
-I , D
0.01
0.1 1 10
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
J(max)
T = 25°C
A
Single Pulse
-V , DRAIN-SOURCE VOLT AGE (V)
DS
Fig. 1 SOA, Safe Oper at ion Area
1
D = 0.9
D = 0.7
E
D = 0.5
D = 0.3
100
70
IWE
60
50
ANSIEN
40
30
EAK
20
(PK)
10
0
0.001 0.01 0.1 1 10 100 1,000
0.0001
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DMG7702SFG
Single Pulse
°
R = 61C/W
θ
JA
R = r * R
θθ
JA(t) (t) JA
T - T = P * R
JA JA(t)
θ
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R = r * R
θ
JA(t) (t)
R = 61C/W
JA
Duty Cycle, D = t1/t2
θθJA
°
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Therm al Resist ance
DMG7702SFG
Document number: DS35248 Rev. 6 - 2
3 of 8
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July 2012
© Diodes Incorporated
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