Diodes DMG7430LFG User Manual

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Green

DMG7430LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Product Summary

max

10.5A

9.2A

(BR)DSS

30V

11m @ V

15m @ VGS = 4.5V

DS(ON)

max

= 10V

TA = 25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Backlighting

ADVANCE INFORMATION

• Power Management Functions

• DC-DC Converters

Pin 1

POWERDI

3333-8

Top View Bottom View

Features and Benefits

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• " Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: POWERDI®3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

1 2 3 4

Top View

Internal Schematic

8 7 6 5

Ordering Information (Note 2)

Part Number Case Packaging

DMG7430LFG-7

DMG7430LFG-13

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied.

2. For packaging details, go to our website at http://www.diodes.com.

POWERDI POWERDI

3333-8

2000/Tape & Reel 3000/Tape & Reel

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMG7430LFG

Document number: DS35497 Rev. 5 - 2

G73 = Product Type Marking Code

YYWW

G73

YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53)

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P, P

RAIN

CUR

DMG7430LFG

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Steady

Continuous Drain Current (Note 4) VGS = 10V

State t<10s

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 4) Avalanche Current (Note 5) L = 0.1mH Repetitive Avalanche Energy (Note 5) L = 0.1mH

= 25°C

= 70°C

= 25°C

= 70°C

DSS

GSS

30 V

±20 V

10.5

8.5 14

90 A

3.0 A 22 A 24 mJ

Thermal Characteristics @T

ADVANCE INFORMATION

Total Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient (Note 3)

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Case (Note 4)

Operating and Storage Temperature Range

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Steady state

t<10s 1.5

Steady state

t<10s 78

Steady state

t<10s 3.5

Steady state

t<10s 33

R R

J, TSTG

0.9

142

2.2

°C/W

-55 to +150 °C

100

(A) E

I, D

0.1

P = 10sWµ

DS(on)

Limited

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

(W)

IWE

ANSIEN

EAK

100

90 80 70 60

50 40 30

Single Pulse

R = 140C/W

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

(PK)

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

0.01

0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

Fig. 2 SOA, Safe Operation Area

POWERDI is a registered trademark of Diodes Incorporated

DMG7430LFG

Document number: DS35497 Rev. 5 - 2

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February 2012

T T

HER

TANC

)

DMG7430LFG

D = 0.9 D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R = r * R

JA(t) (t)

R = 140C/W

Duty Cycle, D = t1/t2

θθJA

t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Thermal Resistance

ADVANCE INFORMATION

Electrical Characteristics T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS DSS GSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

GS(th

DS (ON)

|Y V

1.4 - 2.5 V

- 7 11

- 11 15

- 74 - S

- 0.75 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 20A

mΩ

= 4.5V, ID = 20A

VDS = 5V, ID = 20A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance

Gate resistance

iss

oss

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge

Notes: 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

5. I

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Q Q

D(on

D(off

s d

f r

- 1281 - pF

- 145 - pF

- 125 - pF

- 1.2 -

- 12.5 - nC

- 26.7 - nC

- 3.6 - nC

- 4.4 - nC

- 5.2 - ns

- 21.2 - ns

- 22.3 - ns

- 5.1 - ns

- 8.5 - ns

- 7.0 - nC

= 15V, VGS = 0V,

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= 15V, ID = 12A

= 15V, VGS = 10V,

= 1.25, RG = 3,

IF = 12A, di/dt = 500A/s IF = 12A, di/dt = 500A/s

POWERDI is a registered trademark of Diodes Incorporated

DMG7430LFG

Document number: DS35497 Rev. 5 - 2

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February 2012

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