Diodes DMG7410SFG User Manual

Product Summary

V

R

(BR)DSS

30V

20m @ V

27m @ VGS = 4.5V

DS(ON)

GS

= 10V

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• Backlighting

• DC-DC Converters

NEW PRODUCT

• Power management functions

Top View

POWERDI3333-8

I

D

TA = 25°C

8.0 A

6.5 A

D

D

D

Green

Features

• Low R

• Small form factor thermally efficient package enables higher

• Occupies just 33% of the board area occupied by SO-8 enabling

• 100% UIS (Avalanche) rated

• 100% Rg tested

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

• Weight: 0.072 grams (approximate)

D

Bottom View

N-CHANNEL ENHANCEMENT MODE MOSFET

– ensures on state losses are minimized

DS(ON)

density end products

smaller end product

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

Pin 1

S

S

S

G

1
2
3
4

Top View

Internal Schematic

DMG7410SFG

POWERDI

8
7
6
5

®

Ordering Information (Note 4)

Part Number Case Packaging

DMG7410SFG-7 POWERDI3333-8 2000 / Tape & Reel

DMG7410SFG-13 POWERDI3333-8 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

YYWW

G74

G74 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

DMG7410SFG

Document number: DS35108 Rev. 7 - 2

www.diodes.com

1 of 7

N39

YYWW

N39 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

October 2012

© Diodes Incorporated

R

N

C

U

R

REN

T

P, P

T

R

T

P

O

R

θ

DMG7410SFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (Note 7)

Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH

Steady

State

Steady

State
t ≤ 10s
Steady

State
t ≤ 10s

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

V
V

I

I

E

DSS
GSS

I

D

I

D

I

D

I

D

I

D

DM
AR

AR

30 V

±25 V

5.3

4.2

8.0

6.3

9.5

7.7

6.5

4.9

7.8

6.2

A

A

A

A

A

70 A
18 A
16 mJ

NEW PRODUCT

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R
Power Dissipation (Note 6) t ≤ 10s
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t ≤ 10s R
Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

7. Repetitive rating, pulse width limited by junction temperature.
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.

8. I

AR

P

D

JA

P

D

JA

P

D

JA

T

, T

J

STG

100

R

DS(on)

Limited

P = 10sWµ

400

350

(W)

10

(A)

DC

P = 10s

1

AI

D

0.1

I, D

0.01

0.1 1 10

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

T = 150°C

J(max)

T = 25°C

A

Single Pulse

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 SOA, Safe Operation Area

P = 100µs

W

100

300

IWE

250

200

ANSIEN

150

EAK

100

(PK)

50

0

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

POWERDI is a registered trademark of Diodes Incorporated.

DMG7410SFG

Document number: DS35108 Rev. 7 - 2

2 of 7

www.diodes.com

1.0 W

130.6 °C/W

2.07 W

62.5 °C/W

3.0 W

43.8 °C/W

-55 to +150 °C

Single Pulse

°

R = 60C/W

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

October 2012

© Diodes Incorporated

NEW PRODUCT

T

R

T T

HER

R

T

C

)

g

g

g

)

r

)

DMG7410SFG

1

D = 0.9
D = 0.7

E

D = 0.5

AN

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R = r * R

θ

JA(t) (t)

R = 60C/W

JA

Duty Cycle, D = t1/t2

θθJA

°

t1, PULSE DURATION TIME (sec)

Fig. 3 Transi ent Thermal Resis t ance

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

30 - - V

- - 0.1

- - ±100 nA

VGS = 0V, ID = 250μA

μA

= 30V, VGS = 0V

V

DS

VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.8 1.2 2.0 V

- 13.5 20

- 22 27

|

- 13.0 - S

- 0.7 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 10A

V

mΩ

GS

= 4.5V, ID = 7.5A

V

GS

VDS = 5V, ID = 10A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance

C
C

oss

C

R
Total Gate Charge VGS = 4.5V Qg
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to prod uction testing.

Q

Q

t

D(on

t

D(off

t

t

iss

rss

s
d

f

- 580 -

- 110 -

- 70 -

- 2.0 3.0

- 5.3 -

- 11.3 -

- 1.9 -

- 1.9 -

- 4.4 - ns

- 4.6 - ns

- 19.5 - ns

- 5.8 - ns

V

= 15V, VGS = 0V,

pF

Ω

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

VGS = 4.5V, VDS = 15V, ID = 10A

nC

V

= 10V, VDS = 15V,

GS

= 10A

I

D

= 10V, VDS = 15V,

V

GS

R

= 15, RG = 6

L

POWERDI is a registered trademark of Diodes Incorporated.

DMG7410SFG

Document number: DS35108 Rev. 7 - 2

3 of 7

www.diodes.com

October 2012

© Diodes Incorporated