Diodes DMG7408SFG User Manual

DMG7408SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

Product Summary

I

max

D

7.0A

6.0A

V

(BR)DSS

30V

R

23m @ V

33m @ VGS = 4.5V

DS(ON)

max

GS

TA = 25°C

= 10V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

ADVANCE INFORMATION

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

Top View

POWERDI3333-8

D

D

D

D

Bottom View

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) test in production

• Low R

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Pin 1

S

S

S

G

1
2
3
4

Top View

Internal Schematic

8
7
6
5

Ordering Information (Note 4)

Part Number Case Packaging

DMG7408SFG-7 POWERDI3333-8 2000/Tape & Reel

DMG7408SFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

G78

YYWW

DMG7408SFG

Document number: DS35620 Rev. 5 - 2

G78 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

www.diodes.com

1 of 6

N34

YYWW

N34 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

© Diodes Incorporated

June 2012

θ

)

g

g

g

)

r

)

DMG7408SFG

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = 10V

State

t<10s

Steady

Continuous Drain Current (Note 6) VGS = 4.5V

State

t<10s

Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)

= 25°C

T

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

I

AS

E

AS

30 V

±20 V

7.0

5.5

9.5

7.5

6.0

5.7

8.0

6.3

A

A

A

A

66 A

3.0 A
9 A

12 mJ

ADVANCE INFORMATION

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

P

Steady state

t<10s 72 °C/W

Steady state

t<10s 35 °C/W

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1 W

131 °C/W

2.1 W
63 °C/W

7.1 °C/W

-55 to +150 °C

Electrical Characteristics T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

1.0 1.45 2.4 V

-

|

- 11 - S

- 0.72 1 V

15
25

23
33

VDS = VGS, ID = 250A

= 10V, ID = 10A

V

mΩ

GS

VGS = 4.5V, ID = 7.5A

VDS = 5V, ID = 10A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. R

POWERDI is a registered trademark of Diodes Incorporated

is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R

θJA

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L = 0.3mH, TJ = 25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMG7408SFG

Document number: DS35620 Rev. 5 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 478.9 - pF

- 96.7 - pF

- 61.4 - pF

0.4 1.1 1.6

- 5.0 8

- 10.5 17

- 1.8 - nC

- 1.6 - nC

- 2.9 - ns

- 7.9 - ns

- 14.6 - ns

- 3.1 - ns

2 of 6

= 15V, VGS = 0V,

V

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

nC

= 15V,ID = 10A

V

DS

V

= 10V, VDS = 15V,

GS

= 3, RL = 1.5

R

G

June 2012

© Diodes Incorporated