Diodes DMG7401SFG User Manual

D

NEW PRODUCT

Product Summary

I

max

D

-9.8A

-7.0A

V

(BR)DSS

-30V

R

13m @ V

25m @ VGS = -4.5V

DS(ON)

max

= -10V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Backlighting
 Power Management Functions
 DC-DC Converters

ESD PROTECTE

Top View

POWERDI3333

DMG7401SFG

P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

Features and Benefits

 Low R
 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0174 grams (approximate)

Drain

Pin 1

S

S

S

G

Gate

D

D

D

D

Bottom View

Gate
Protection
Diode

Equivalent Circuit

Source

®

Ordering Information (Note 4)

Part Number Case Packaging

DMG7401SFG-7 POWERDI3333 2000/Tape & Reel

DMG7401SFG-13 POWERDI3333 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/packages.html

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMG7401SFG

Document number: DS35623 Rev. 10 - 2

G75 = Product marking code

YYWW

G75

www.diodes.com

YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)

1 of 6

© Diodes Incorporated

June 2013

)

g

g

g

)

r

)

r

r

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = -10V

State
t<10s

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 1mH

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

DMG7401SFG

V

DSS

V

GSS

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

TA = +70°C

Steady State

t<10s 82 °C/W

T

= +25°C

A

TA = +70°C

Steady State

t<10s 36 °C/W

I

D

I

D

I

S

I

DM

I

AR

E

AR

T

J, TSTG

P

D

R

JA

P

D

R

JA

R

JC

-30 V

±25 V

-9.8

-7.7

-13.5

-10.8

A

A

-3.0 A

-80 A
14 A

104 mJ

0.94

0.6

W

137 °C/W

2.2

1.3

W

60 °C/W

3.0 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

DSS

-30
—
—

—
—
—

— V

-1 A

±10 A

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

V

GS(th

R

DS (ON)

|Y

fs

-1.7 — -3.0 V
—
—
—

|

—

9 11
10 13
17 25
21 — S

VDS = VGS, ID = -250A

= -20V, ID = -12A

V

m

GS

= -10V, ID = -9A

V

GS

= -4.5V, ID = -5A

V

GS

= -5V, ID = -10A

V

DS

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

t

t

Q
Q

D(on

t

D(off

t

iss

s
d

f

—

2246 2987 pF
—
—
—
—
—
—
—
—
—
—
—

352 468 pF
294 391 pF

5.1 8.5 

20.5 30 nC
41 58 nC

7.6 - nC

8.0 - nC

11.3 23 ns

15.4 31 ns

38.0 61 ns

22.0 38 ns

= -15V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -15V, ID = -12A

DS

= -15V, VGS = -10V,

V

DD

R

= 1.25, RG = 3,

L

BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

POWERDI is a registered trademark of Diodes Incorporated

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

8. Short duration pulse test used to minimize self-heating effect

9. Guaranteed by design. Not subject to product testing

DMG7401SFG

Document number: DS35623 Rev. 10 - 2

V

SD

t

r

Q

r

www.diodes.com

2 of 6

—
—
—

-0.7 -1.0 V
20 31 ns

9.5 18 nC

VGS = 0V, IS = -1A
I

= -9.5A, dI/dt = 100A/s

S

© Diodes Incorporated

June 2013