Diodes DMG6968UTS User Manual
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• ESD Protected Up To 2KV
• Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED TO 2kV
Top View Internal Schematic
Bottom View
DMG6968UTS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: TSSOP-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.039 grams (approximate)
DD
1
D
S1
2
S1
3
G1
4
D
S2
S2
G2
G1
8
7
6
5
N-Channel N-Channel
Top View
G2
S1 S2
Ordering Information (Note 3)
Part Number Case Packaging
DMG6968UTS-13 TSSOP-8 2500 / 13” Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
N6968U
Part no
YY WW
1
Top Vi ew
4
Xth week: 01~52
Year: “0 9” = 20 09
DMG6968UTS
Document number: DS31793 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
© Diodes Incorporated
)
g
g
g
g
r
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 4)
Steady
State
= 25°C
A
= 70°C
T
A
Pulsed Drain Current
Thermal Characteristics
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C R
Operating and Storage Temperature Range
Characteristic Symbol Value Unit
T
DMG6968UTS
V
DSS
V
GSS
I
D
I
DM
P
D
JA
, T
J
STG
20 V
±12 V
5.2
3.5
A
30 A
1.0 W
125 °C/W
-55 to +150 °C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
BV
BV
I
DSS
I
GSS
DSS
SGS
20 - - V
- - 1.0
- - 10
±12 - - V
VGS = 0V, ID = 250A
μA
μA
= 20V, VGS = 0V
V
DS
= ±10V, VDS = 0V
V
GS
VDS = 0V, IG = ±250μA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.35 - 0.95 V
-
-
-
|
- 13 - S
- 0.7 1.0 V
18
21
26
23
27
34
VDS = VGS, ID = 250A
V
= 4.5V, ID = 6.5A
m
GS
VGS = 2.5V, ID = 5.5A
VGS = 1.8V, ID = 3.5A
VDS = 5V, ID = 5A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
-
-
-
s
d
f
- 202 -
-
-
-
-
-
-
-
74
29
8.8
1.4
3.0
53
78
562
234
- pF
- pF
V
DS
- pF
V
- nC
- nC
- nC
DS
V
GS
= 6.5A
I
D
- ns
- ns
- ns
V
DD
R
L
- ns
=10V, VGS = 0V f = 1.0MHz
=0V, VGS = 0V, f = 1MHz
= 4.5V, VDS = 10V,
= 10V, VGS = 4.5V,
= 10, RG = 6
143
DMG6968UTS
Document number: DS31793 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
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