Diodes DMG6968UDM User Manual
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Features
• Low Gate Charge
• Low R
• 24mΩ @V
• 28mΩ @V
• 34mΩ @V
• Low Input/Output Leakage
• ESD Protected up to 2kV HBM
• Lead Free By Design/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4)
NEW PRODUCT
ESD PROTECTED TO 2kV
DS(ON)
:
= 4.5V
GS
= 2.5V
GS
= 1.8V
GS
TOP VIEW
DMG6968UDM
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT-26
• Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.0008 grams (approximate)
SOT-26
S
1
D/1D
2
S
2
TOP VIEW
Pin Configuration
G
D/1D
G
1
2
2
G1
N-Channel N-Channel
DD
G2
S1 S2
Equivalent Circuit
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous TA = 25°C
T
Pulsed Drain Current (Note 2)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range
Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMG6968UDM
Document number: DS31758 Rev. 4 - 2
= 70°C
A
www.diodes.com
1 of 6
V
DSS
V
GSS
I
D
I
DM
P
D
R
JA
, T
T
J
STG
20 V
±12
6.5
5.2
V
A
30 A
0.85 W
147
-55 to +150
°C /W
°C
July 2009
© Diodes Incorporated
)
g
g
g
)
r
)
R
C
U
R
R
T
RAIN CUR
REN
T
Electrical Characteristics @T
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NEW PRODUCT
Gate Resisitance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
30
25
(A)
20
EN
Characteristic Symbol Min Typ Max Unit Test Condition
V = 8.0V
GS
V = 4.5V
GS
V = 3.0V
V = 2.5V
GS
V = 2.0V
GS
GS
= 25°C unless otherwise specified
A
20
BV
DSS
I
DSS
I
GSS
BV
SGS
V
GS(th
R
DS (ON)
|Y
FS
V
SD
C
iss
C
oss
C
rss
R
G
Q
⎯
Q
s
Q
d
t
D(on
t
⎯
t
D(off
t
⎯
f
⎯ ⎯
⎯ ⎯
±12 - - V
0.5
⎯
⎯
|
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
1
V
μA
±10 μA
⎯
17
20
26
8
0.9 V
24
28
mΩ
34
⎯
S
0.7 1.0 V
143
74
29
202
8.8
1.4
3.0
53
78
562
234
⎯
⎯
⎯
⎯ Ω
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
20
16
V = 5V
DS
(A)
12
DMG6968UDM
ID = 250μA, VGS = 0V
V
= 20V, VGS = 0V
DS
V
= 0V, VGS = ±10V
DS
VDS = 0V, IG = ±250μA
V
= VGS, ID = 250μA
DS
V
= 4.5V, ID = 6.5A
GS
V
= 2.5V, ID = 5.5A
GS
= 1.8V, ID = 3.5A
V
GS
V
= 10V, ID = 5A
DS
IS = 2.25A, V
= 10V, VGS = 0V
V
DS
f = 1.0MHz
VGS = 0V, V
= 4.5V, V
V
GS
= 10V, V
V
DD
= 10Ω, RG = 6Ω
R
L
= 0V
GS
= 0V, f = 1MHz
DS
= 10V, ID = 6.5A
DS
= 4.5V,
GS
15
AIN
10
D
I, D
V = 1.5V
GS
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Ch ar acterist ic s
8
T = 150°C
A
D
I, D
4
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.5 1 1.5 2
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
DMG6968UDM
Document number: DS31758 Rev. 4 - 2
2 of 6
www.diodes.com
July 2009
© Diodes Incorporated
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