Diodes DMG6968UDM User Manual

θ

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Features

• Low Gate Charge

• Low R

• 24mΩ @V

• 28mΩ @V

• 34mΩ @V

• Low Input/Output Leakage

• ESD Protected up to 2kV HBM

• Lead Free By Design/RoHS Compliant (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• "Green" Device (Note 4)

NEW PRODUCT

ESD PROTECTED TO 2kV

DS(ON)

:

= 4.5V

GS

= 2.5V

GS

= 1.8V

GS

TOP VIEW

DMG6968UDM

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT-26

• Case Material - Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.0008 grams (approximate)

SOT-26

S

1

D/1D

2

S

2

TOP VIEW

Pin Configuration

G

D/1D

G

1

2

2

G1

N-Channel N-Channel

DD

G2

S1 S2

Equivalent Circuit

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous TA = 25°C
T
Pulsed Drain Current (Note 2)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range

Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

2. Repetitive Rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

= 70°C

A

www.diodes.com

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V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

, T

T

J

STG

20 V

±12

6.5

5.2

V
A

30 A

0.85 W
147

-55 to +150

°C /W

°C

July 2009

© Diodes Incorporated

)

g

g

g

)

r

)

R

C

U

R

R

T

RAIN CUR

REN

T

Electrical Characteristics @T

STATIC CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 5)

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

NEW PRODUCT

Gate Resisitance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Test pulse width t = 300ms.

6. Guaranteed by design. Not subject to production testing.

30

25

(A)

20

EN

Characteristic Symbol Min Typ Max Unit Test Condition

V = 8.0V

GS

V = 4.5V

GS

V = 3.0V

V = 2.5V

GS

V = 2.0V

GS

GS

= 25°C unless otherwise specified

A

20

BV

DSS

I

DSS

I

GSS

BV

SGS

V

GS(th

R

DS (ON)

|Y

FS

V

SD

C

iss

C

oss

C

rss

R

G

Q

⎯

Q

s

Q

d

t

D(on

t

⎯

t

D(off

t

⎯

f

⎯ ⎯
⎯ ⎯

±12 - - V

0.5

⎯

⎯

|

⎯

⎯

⎯
⎯
⎯

⎯
⎯

⎯

⎯

⎯ ⎯

1

V

μA

±10 μA

⎯

17
20
26

8

0.9 V
24

28

mΩ

34
⎯

S

0.7 1.0 V

143

74
29

202

8.8

1.4

3.0
53
78

562
234

⎯
⎯
⎯
⎯ Ω

⎯
⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

nC
nC
nC

ns
ns
ns
ns

20

16

V = 5V

DS

(A)

12

DMG6968UDM

ID = 250μA, VGS = 0V
V

= 20V, VGS = 0V

DS

V

= 0V, VGS = ±10V

DS

VDS = 0V, IG = ±250μA
V

= VGS, ID = 250μA

DS

V

= 4.5V, ID = 6.5A

GS

V

= 2.5V, ID = 5.5A

GS

= 1.8V, ID = 3.5A

V

GS

V

= 10V, ID = 5A

DS

IS = 2.25A, V

= 10V, VGS = 0V

V

DS

f = 1.0MHz
VGS = 0V, V

= 4.5V, V

V

GS

= 10V, V

V

DD

= 10Ω, RG = 6Ω

R

L

= 0V

GS

= 0V, f = 1MHz

DS

= 10V, ID = 6.5A

DS

= 4.5V,

GS

15

AIN

10

D

I, D

V = 1.5V

GS

5

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acterist ic s

8

T = 150°C

A

D

I, D

4

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0.5 1 1.5 2
V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

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© Diodes Incorporated

R

R

OUR

CE ON-R

TANC

R

R

OUR

C

ON-R

TANC

5

R

RAIN-SOUR

C

OUR

CE C

U

R

R

N

T

NEW PRODUCT

DMG6968UDM

0.05

Ω

E ( )

0.04

ESIS

0.03

V = 1.8V

GS

0.02

AIN-S

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G at e Voltage

1.6

V = 2.5V

GS

V = 4.5V

GS

0.05

Ω

E ( )

0.04

V = 4.5V

GS

ESIS

T = 150°C

0.03

E

0.02

AIN-S

0.01

, D

DS(ON)

0

048121620

I , DRAIN CURRENT (A)

D

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain C urrent an d Tempera t ur e

0.0

1.4

V = 2.5V

GS

I = 5.5A

1.2

D

V = 4.5V

GS

I = 6.5A

D

1.0

DS(ON)

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with Temperature

1.0

0.8

I = 1mA

D

0.6

I = 250µA

D

0.04

E

Ω

V = 2.5V

GS

I = 5.5A

D

V = 4.5V

GS

I = 5.5A

D

, D

0.03

0.02

ON-RESISTANCE ( )

DS(ON)

0.01

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

20

16
(A)
E

12

0.4

0.2

GS(TH)

V , GATE THRESH OLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient T emperature

8

T = 25°C

A

S

I, S

4

0

0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

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C, CAPACITANC

F

T

R

T T

HER

R

TANC

NEW PRODUCT

DMG6968UDM

1,000

f = 1MHz

100,000

10,000

)
E (p

C

iss

1,000

T = 150°C

A

T = 125°C

A

100

C

oss

C

rss

10

0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Capacitance

100

DSS

10

I , LEAKAGE CURRENT (nA)

T = 85°C

T = -55°C

A

A

T = 25°C

A

1

2 4 6 8 10 12 14 16 18 20

V , DRAIN- SOURCE VOLTAG E ( V)

DS

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-S ource Volta ge

1

E

D = 0.7
D = 0.5

D = 0.1

ESIS

0.1

D = 0.05

MAL

0.01

ANSIEN

r(t),

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 176°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number Case Packaging

DMG6968UDM-7 SOT-26 3000/Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

2N4

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

2N4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)

YM

M = Month (ex: 9 = September)

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Package Outline Dimensions

NEW PRODUCT

Suggested Pad Layout

DMG6968UDM

A

Dim Min Max Typ

B C

H

K

J

Z

D

G

Y

X

C2

L

C2

C1

M

Dimensions Value (in mm)

Z 3.20
G 1.60
X 0.55
Y 0.80

C1 2.40
C2 0.95

SOT-26

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

⎯ ⎯

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

α

All Dimensions in mm

0.95

⎯

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

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© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG6968UDM

DMG6968UDM

Document number: DS31758 Rev. 4 - 2

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