Diodes DMG6968U User Manual

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DMG6968U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 25mΩ @ V

 29mΩ @ V

 36mΩ @ V

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected Up To 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

= 4.5V

GS

= 2.5V

GS

= 1.8V

GS

ESD PROTECTED TO 2kV

Top View

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

Drain

Gate

Gate
Protection
Diode

Internal Schematic To

Source

D

G

View

e3

S

Ordering Information (Note 5)

Part Number Compliance Case Packaging

DMG6968U-7 Standard SOT23 3000/Tape & Reel

DMG6968UQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

2N4

Chengdu A/T Site

YM

DMG6968U

Document number: DS31738 Rev. 6 - 2

2N4

Shanghai A/T Site

YM

www.diodes.com

2N4 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

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October 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6)

Pulsed Drain Current

Steady

State

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

DM

20 V

±12 V

6.5

5.2

30 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient @ TA = +25°C R

Operating and Storage Temperature Range

T

P

D

θJA

J, TSTG

1.3 W

157 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

Gate-Source Breakdown Voltage

BV

BV

DSS

I

GSS

DSS

SGS

20

 

 

±12 — — V

 

1.0 µA

±10 µA

V

VGS = 0V, ID = 250µA

VDS = 20V, VGS = 0V

VGS = 10V, VDS = 0V

VDS = 0V, IG = 250µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

V

R

DS(ON)

|Y

GS(th)

fs

0.5



| 



0.9 V

21 25

23 29

28 36

8



VDS = VGS, ID = 250µA

V

GS

mΩ

V

GS

V

GS

S

VDS = 10V, ID = 5A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG6968U

Document number: DS31738 Rev. 6 - 2

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g

Q

gs

Q

gd

t

D(on)

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D(off)

t

f

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151

91

32

8.5

1.6

2.8

54

66

613

205

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pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

V

DS

f = 1.0MHz

V

GS

V

DD

R

L

DMG6968U

A

= 4.5V, ID = 6.5A

= 2.5V, ID = 5.5A

= 1.8V, ID = 3.5A

= 10V, VGS = 0V

= 4.5V, V

= 10V, V

= 10, RG = 6, ID = 1A

= 10V, ID = 6.5A

DS

= 4.5V,

GS

October 2013

© Diodes Incorporated