Diodes DMG6898LSD User Manual

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.072 grams (approximate)

D1

D1
D2

D2

Top View Top View

Internal Schematic

DMG6898LSD

G1

S1
G2
S2

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG6898LSD-13 Commercial SO-8 2500 / Tape & Reel

DMG6898LSDQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

8 5

G6898LD

YY

WW

1 4

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Logo
Part no.

Xth week: 01 ~ 53
Y ear: “08” = 2008
“09” = 2009

March 2012

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4)

Steady

State

= 25°C

A

= 85°C

T

A

Pulsed Drain Current (Note 5)

Thermal Characteristics

Characteristic Symbol Value Unit

NEW PRODUCT

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Operating and Storage Temperature Range

DMG6898LSD

V

DSS

V

GSS

I

D

I

DM

P

D

θJA

, T

T

J

STG

20 V

±12 V

9.5

7.1

A

30 A

1.28 W

99.3 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

20 - - V

- - 1.0 μA

- - ±10 μA

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 1.0 1.5 V

-

|

- 17 - S

- 0.7 1.2 V

11
17

16
23

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 9.4A

mΩ

GS

VGS = 2.5V, ID = 8.3A

VDS = 5V, ID = 9.4A

VGS = 0V, IS = 1.3A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

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1149

­157

­142

-

1.51

-

11.6

-

-

-

-

-

-

-

-

26

2.7

3.4

11.67

12.49

35.89

12.33

- pF

- pF

- pF

- Ω

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

- nC

- nC

- nC

V

GS

I

D

- nC

- ns

- ns

- ns

V

DD

R

GEN

- ns

= 10V, VGS = 0V,

= 4.5V, VDS = 10V,

= 9.4A

= 10V, VGS = 4.5V,

= 6Ω, ID = 1A

© Diodes Incorporated

March 2012

RAIN CUR

REN

T

R

R

OUR

CE ON-R

TANC

R

R

OUR

CE ON-R

TANC

NEW PRODUCT

20

V = 8.0V

GS

V = 4.5V

GS

15

V = 3.0V

GS

V = 2.5V

GS

V = 2.0V

GS

10

D

I , DRAIN CURRENT (A)

5

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 1.8V

GS

V = 1.5V

GS

Fig. 1 Typical Output Ch ar acteristic

0.06

Ω

20

V = 10V

15

DS

(A)

10

D

I, D

5

T = 150°C

A

T = 125°C

A

0

0 0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

0.04

Ω

DMG6898LSD

T = 85°C

A

T = 25°C

A

T = -55°C

A

E ( )

0.05

V = 4.5V

0.04

V = 1.8V

GS

0.03

ESIS

GS

0.03

0.02

V = 2.5V

GS

V = 4.5V

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 2 4 6 8101214161820

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

GS

vs. Drain Current and Gate Voltage

1.6

1.4

1.2

V = 4.5V

GS

1.0

I = 500mA

D

0.8

DSON

R , DRAIN-SOURCE

0.6

ON-RESISTANCE (NORMALIZED)

V = 2.5V

GS

I = 150mA

D

T = 150°C

0.02

AIN-S

0.01

, D

DS(ON)

0

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0246 8101214161820

I , DRAIN CURRENT (A)

D

0.04

Ω

Fig. 4 Typical On-Resistance

vs. Drain C urrent an d Tempera tu r e

E ( )

0.03

ESIS

V = 4.5V

0.02

AIN-S

0.01

GS

I = 500mA

D

V = 2.5V

GS

I = 150mA

D

, D

DSON

0.4

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

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March 2012

© Diodes Incorporated

OUR

CE CUR

REN

T

C, CAPACITAN

C

F

GE CUR

RENT

NEW PRODUCT

DMG6898LSD

1.8

20

1.6

1.4

15

(A)

T = 25°C

A

1.2

I = 1mA

1.0

D

10

0.8

I = 250µA

D

0.6

S

5

0.4

GS(TH)

0.2

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

1,800

I, S

0

0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10,000

1,600

T = 150°C

1,400

)

1,200

E (p

1,000

(nA)

1,000

C

iss

A

T = 125°C

A

100

800

600

400

C

200

0

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

oss

C

rss

Fig. 9 Typical Total Capacitance

10

V = 10V

8

DS

I = 9.4A

D

6

4

G

2

GS

V , ATE-SOURCE VOLTAGE (V)

0

04 81216202428

Q , OTAL GATE CHARGE (nC)

T

g

Fig. 11 Gat e- Source Voltage vs. Total Gate Char ge

T = 85°C

10

DSS

I , LEAKA

A

T = 25°C

A

T = -55°C

A

1

0 2 4 6 8 101214161820

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Leakage Current

vs. Drain-S ource Volta ge

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

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T

R

T T

HER

R

TANC

1

E

D = 0.7

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

NEW PRODUCT

r(t),

0.001

D = Single P ulse

0.0001

Package Outline Dimensions

e

D

Suggested Pad Layout

D = 0.9

R (t) = r(t) *

θ

JA

R = 205°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURA TION TIME (s)

1

Fig. 12 Transient Thermal Response

SO-8

Dim Min Max

A - 1.75

E1

E

A1

Detail ‘A’

L

0.254

Gaug e Plan e
Seating Plane

A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5
D 4.85 4.95
E 5.90 6.10

7°~9

h

°

45

A2

A3

A

b

X

°

Detail ‘A’

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

0° 8°

θ

All Dimensions in mm

Dimensions Value (in mm)

X 0.60

C1

Y 1.55

C1 5.4

C2

Y

C2 1.27

DMG6898LSD

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

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© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and

NEW PRODUCT

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG6898LSD

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

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