Diodes DMG6898LSD User Manual

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.072 grams (approximate)

D1

D1
D2

D2

Top View Top View

Internal Schematic

DMG6898LSD

G1

S1
G2
S2

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG6898LSD-13 Commercial SO-8 2500 / Tape & Reel

DMG6898LSDQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

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G6898LD

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WW

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Part no.

Xth week: 01 ~ 53
Y ear: “08” = 2008
“09” = 2009

March 2012

© Diodes Incorporated

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g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4)

Steady

State

= 25°C

A

= 85°C

T

A

Pulsed Drain Current (Note 5)

Thermal Characteristics

Characteristic Symbol Value Unit

NEW PRODUCT

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Operating and Storage Temperature Range

DMG6898LSD

V

DSS

V

GSS

I

D

I

DM

P

D

θJA

, T

T

J

STG

20 V

±12 V

9.5

7.1

A

30 A

1.28 W

99.3 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

20 - - V

- - 1.0 μA

- - ±10 μA

VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V

VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 1.0 1.5 V

-

|

- 17 - S

- 0.7 1.2 V

11
17

16
23

VDS = VGS, ID = 250μA

V

= 4.5V, ID = 9.4A

mΩ

GS

VGS = 2.5V, ID = 8.3A

VDS = 5V, ID = 9.4A

VGS = 0V, IS = 1.3A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

DMG6898LSD

Document number: DS31947 Rev. 4 - 2

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t

D(on

t

t

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-

1.51

-

11.6

-

-

-

-

-

-

-

-

26

2.7

3.4

11.67

12.49

35.89

12.33

- pF

- pF

- pF

- Ω

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

- nC

- nC

- nC

V

GS

I

D

- nC

- ns

- ns

- ns

V

DD

R

GEN

- ns

= 10V, VGS = 0V,

= 4.5V, VDS = 10V,

= 9.4A

= 10V, VGS = 4.5V,

= 6Ω, ID = 1A

© Diodes Incorporated

March 2012