Diodes DMG6602SVT User Manual

Product Summary

Device

V

Q1 30V

Q2 -30V

(BR)DSS

R

DS(on)

60mΩ @ V

100mΩ @ VGS = 4.5V

95mΩ @ V

140mΩ @ VGS = -4.5V

= 10V

GS

= -10V

GS

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

) and yet maintain superior switching

DS(on)

TSOT26

Top View

TA = 25°C

1

G1

2

S2

3

G2

I

D

3.4A

2.7A

-2.8A

-2.3A

Top View

DMG6602SVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free Finish; RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.013 grams (approximate)

Q1

D1

6

D1

5

S1

4

D2

G1

G2

S1

N-Channel

Q2

D2

S2

P-Channel

Ordering Information (Note 3)

Part Number Case Packaging

DMG6602SVT-7 TSOT26 3000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

66C

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG6602SVT

Document number: DS35106 Rev. 6 - 2

66C = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

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θ

DMG6602SVT

Maximum Ratings – Q1 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

Steady

State

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

30 V

±20 V

3.4

2.7

2.7

2.2

A

A

Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A
Pulsed Drain Current (Note 5)

I

DM

25 A

Maximum Ratings – Q2 @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

ADVANCE INFORMATION

Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A

Steady

State

Steady

State

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

Pulsed Drain Current (Note 5)

V

DSS

V

GSS

I

D

I

D

I

D

-30 V

±20 V

-2.8

-2.4

-2.3

-2.1

A

A

-20 A

Thermal Characteristics

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

A

TA = 70°C

Steady state

t<10s 109

T

= 25°C

A

TA = 70°C

Steady state

t<10s 71

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

DMG6602SVT

Document number: DS35106 Rev. 6 - 2

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0.84

0.52
155

1.27

0.8

W

°C/W

W

102

°C/W

34

-55 to +150 °C

May 2012

© Diodes Incorporated

)

g

g

g

r

R

CUR

RENT

R

A

C

R

R

A

Electrical Characteristics – Q1 NMOS@ T

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time

ADVANCE INFORMATION

Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

Characteristic Symbol Min Typ Max Unit Test Condition

10.0

8.0

(A)

6.0

4.0

AIN

D

I, D

2.0

= 25°C unless otherwise stated

A

30 - - V

BV

I
I

V

GS(th

R

DS (ON)

|Y
V

C
C
C

DSS
DSS
GSS

fs

SD

iss

oss

rss

R

|

- - 1.0 µA

- - ±100 nA

1.0 - 2.3 V

-

38
55

- 4 - S

- 0.8 1 V

- 290 400

- 40 80

- 40 80

- 1.4 -

- 4 6

- 9 13
Q
Q

t

D(on)

t

D(off)

s
d

t

t

f

- 1.2 -

- 1.5 -

- 3 -

- 5 -

- 13 -

- 3 -

10

)

ENT (
U

IN

D

I, D

8

6

4

2

60

100

V = 5.0V

DS

DMG6602SVT

VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA
V

= 10V, ID = 3.1A

mΩ

GS

VGS = 4.5V, ID = 2A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 1A

V

= 15V, VGS = 0V,

DS

pF

f = 1.2MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 3.1A

nC

ns

= 15V, VGS = 10V, ID = 3A

V

DS

= 10V, VDS = 15V,

V

GS

= 3Ω, RL = 4.7Ω

R

G

0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

0

012345

V , GATE SOURCE VOLTAGE(V)

GS

Fig. 2 Typical Transfer Characteristics

DMG6602SVT

Document number: DS35106 Rev. 6 - 2

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