Product Summary
Device
V
Q1 30V
Q2 -30V
(BR)DSS
R
DS(on)
60mΩ @ V
100mΩ @ VGS = 4.5V
95mΩ @ V
140mΩ @ VGS = -4.5V
= 10V
GS
= -10V
GS
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
ADVANCE INFORMATION
) and yet maintain superior switching
DS(on)
TSOT26
Top View
TA = 25°C
1
G1
2
S2
3
G2
I
D
3.4A
2.7A
-2.8A
-2.3A
Top View
DMG6602SVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free Finish; RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
Q1
D1
6
D1
5
S1
4
D2
G1
G2
S1
N-Channel
Q2
D2
S2
P-Channel
Ordering Information (Note 3)
Part Number Case Packaging
DMG6602SVT-7 TSOT26 3000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
66C
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
66C = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
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θ
DMG6602SVT
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Steady
State
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
V
DSS
V
GSS
I
D
I
D
30 V
±20 V
3.4
2.7
2.7
2.2
A
A
Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A
Pulsed Drain Current (Note 5)
I
DM
25 A
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -4.5V
ADVANCE INFORMATION
Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A
Steady
State
Steady
State
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
Pulsed Drain Current (Note 5)
V
DSS
V
GSS
I
D
I
D
I
D
-30 V
±20 V
-2.8
-2.4
-2.3
-2.1
A
A
-20 A
Thermal Characteristics
Characteristic Symbol Value Units
T
= 25°C
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
A
TA = 70°C
Steady state
t<10s 109
T
= 25°C
A
TA = 70°C
Steady state
t<10s 71
P
R
P
R
R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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0.84
0.52
155
1.27
0.8
W
°C/W
W
102
°C/W
34
-55 to +150 °C
May 2012
© Diodes Incorporated
)
g
g
g
r
R
CUR
RENT
R
A
C
R
R
A
Electrical Characteristics – Q1 NMOS@ T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
ADVANCE INFORMATION
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Characteristic Symbol Min Typ Max Unit Test Condition
10.0
8.0
(A)
6.0
4.0
AIN
D
I, D
2.0
= 25°C unless otherwise stated
A
30 - - V
BV
I
I
V
GS(th
R
DS (ON)
|Y
V
C
C
C
DSS
DSS
GSS
fs
SD
iss
oss
rss
R
|
- - 1.0 µA
- - ±100 nA
1.0 - 2.3 V
-
38
55
- 4 - S
- 0.8 1 V
- 290 400
- 40 80
- 40 80
- 1.4 -
- 4 6
- 9 13
Q
Q
t
D(on)
t
D(off)
s
d
t
t
f
- 1.2 -
- 1.5 -
- 3 -
- 5 -
- 13 -
- 3 -
10
)
ENT (
U
IN
D
I, D
8
6
4
2
60
100
V = 5.0V
DS
DMG6602SVT
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
V
= 10V, ID = 3.1A
mΩ
GS
VGS = 4.5V, ID = 2A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 1A
V
= 15V, VGS = 0V,
DS
pF
f = 1.2MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 3.1A
nC
ns
= 15V, VGS = 10V, ID = 3A
V
DS
= 10V, VDS = 15V,
V
GS
= 3Ω, RL = 4.7Ω
R
G
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN -SOURCE VOLTAGE(V)
DS
Fig. 1 Typical Output Characteristics
0
012345
V , GATE SOURCE VOLTAGE(V)
GS
Fig. 2 Typical Transfer Characteristics
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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R,DR
O
R
ON-R
R
R
OUR
ON-R
G
TE THR
H
O
O
T
G
DMG6602SVT
1
Ω
ESISTANCE( )
0.1
CE
R ( ) Ave @ V =4.5V
Ω
DS(ON) G
U
R ( ) Ave @ V =10V
AIN-S
Ω
DS(ON) G
Ω
ESISTANCE( )
CE
AIN-S
0.16
0.12
0.08
0.04
V= 4.5V
GS
Ave R ( ) @ 125°C
DS(ON)
Ave R ( ) @ 150°C
Ω
Ave R ( ) @ 85°C
Ave R ( ) @ 25°C
DS(ON)
DS(ON)
DS(ON)
Ω
Ω
Ω
, D
Ave R() @ -55°C
DS(ON)
0.01
04 8121620
I , DRAIN SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Curr ent and G at e Voltage
1.6
ADVANCE INFORMATION
1.4
DS(ON)
0
02 4 6810
I , DRAIN SOURCE CURRENT (A)
D
Fig. 4 Typical On-Resistance vs.
Drain Curr ent and Temperatur e
0.1
0.08
DS(ON)
Ω
1.2
1
(Normalized)
0.8
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
2.4
2.0
E (V)
A
L
LD V
ES
1.6
1.2
I= 250A
μ
D
I= 1mA
D
°
0.06
0.04
0.02
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0
-50 -25 0 25 50 75 100 125 150
10
8
6
4
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
V(V) @ V=0V T= 25C
SD DS A
°
°
0.8
A
0.4
GS(th)
V,
0
-25 0 25 50 75 100 125 150
-50
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 7 Gat e Threshold Variation vs. Ambient Temperature
S
I , SOURCE CURRENT (A)
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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C
UNC
TIO
N CAPACITAN
C
F
GAT
T
H
R
H
O
OLTAG
R
CUR
RENT
DMG6602SVT
1000
)
E (p
CAve (pF)
OSS
f = 1MHz
CAve (pF)
ISS
10
8
E (V)
V = 10V
DS
I= 3.0A
D
6
LD V
100
ES
4
E
CAve (pF)
, J
T
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
RSS
Fig. 9 Typical Junction Capac itance
100
ADVANCE INFORMATION
R
DS(on)
Limited
P = 100µs
W
2
GS
V
0
0246810
Q(nC)
, TOTAL GATE CHARGE
g
Fig. 10 Gate Charge
10
(A)
1
AIN
D
I, D
0.1
0.01
0.1 1 10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P= 10ms
W
T = 150°C
J(max)
T = 25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
V , DRAIN-SOURCE VOLTAGE (V)
DS
P = 1ms
W
Fig. 11 SOA, Safe Operation Area
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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)
g
g
g
r
RAIN
C
URR
N
Electrical Characteristics – Q2 PMOS@ T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
ADVANCE INFORMATION
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
8.0
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise stated
A
BV
I
I
V
GS(th
R
DS (ON)
|Y
V
C
C
C
DSS
DSS
GSS
fs
SD
iss
oss
rss
R
-30 - - V
- - -1.0 µA
|
- - ±100 nA
-1.0 - -2.3 V
-
73
99
- 6 - S
- -0.8 -1.0 V
- 350 420
- 50 100
- 45 80
- 17.1 -
- 4 6
- 7 9
Q
Q
t
D(on)
t
D(off)
s
d
t
t
f
- 0.9 -
- 1.2 -
- 4.8 -
- 7.3 -
- 20 -
- 13 -
8
95
140
DMG6602SVT
VGS = 0V, ID = -250μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250μA
V
= -10V, ID = -2.7A
GS
mΩ
VGS = -4.5V, ID = -2A
VDS = -5V, ID = -2.7A
VGS = 0V, IS = -1A
= -15V, VGS = 0V,
V
DS
pF
f = 1.2MHz
Ω
nC
ns
= 0V, VGS = 0V, f = 1MHz
V
DS
VDS = -15V, VGS = -4.5V, ID = -3A
= -15V, VGS = -10V, ID = -3A
V
DS
= -10V, VDS = -15V,
V
GS
R
= 6Ω, RL = 15Ω
G
6.0
6
T (A)
E
4.0
D
I , DRAIN CURRENT
2.0
0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN -SOURCE VOLTAGE(V)
DS
Fig. 12 Typical Output Characteristics
4
D
I, D
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , GATE SOURCE VOL TAGE(V)
GS
Fig. 13 Typical T r ansfer Cha ra cteristics
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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O
O
DMG6602SVT
0.4
Ω
0.35
0.3
0.25
0.2
0.15
0.1
0.05
DS(ON)
R ,DRAIN-SOURCE ON- RESISTANCE( )
0
02
Fig. 14 Typical On-Resistance vs.
1.6
R ( ) Ave @ V =2.5V
Ω
DS(ON) G
R() Ave @ V=4.5V
Ω
DS(ON) G
R() Ave @ V=10V
Ω
DS(ON) G
486
I , DRAIN SOURCE CURRENT
D
Drain Cur r ent and G at e Voltage
0.2
Ω
N-RESISTANCE( )
URCE
R , DRAIN-S
V = 4.5V
GS
0.16
Ave R ( ) @ 150°C
DS(ON)
Ω
Ave R ( ) @ 125°C
DS(ON)
Ω
0.12
Ave R ( ) @ 85°C
0.08
0.04
DS(ON)
0
02468
I , DRAIN SOURCE CURRENT (A)
D
Ω
DS(ON)
Ave R ( ) @ 25°C
Ave R() @ -55°C
DS(ON)
DS(ON)
Ω
Ω
Fig. 15 Typical On - Resistance vs.
Drain Curre nt and Temperature
0.2
Ω
ADVANCE INFORMATION
1.4
0.16
1.2
1
(Normalized)
0.8
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 16 On-Resistance Variation with Temperature
2
1.6
1.2
0.8
0.4
0.12
0.08
0.04
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
°
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 17 On-Resistance Variation with Temperature
8
6
4
S
2
I , SOURCE CURRENT (V)
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 18 Gat e Threshold Var ia t ion vs. Ambien t Temperature
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V , SOURCE -DRAI N VOLTAGE (V)
SD
Fig. 19 Diode Forward Voltage vs. Current
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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C
UNC
TIO
N C
CIT
N
C
F
GATE THRESH
O
O
T
G
R
CUR
RENT
DMG6602SVT
1000
)
C Ave(pF)
ISS
f = 1MHz
E (p
A
APA
100
C Ave(pF)
OSS
C Ave(pF)
, J
T
10
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
DS
RSS
Fig. 20 Typical Junction Capacitance
100
R
ADVANCE INFORMATION
DS(on)
Limited
P = 100µs
W
10
E (V)
8
A
L
6
LD V
V= -15
DS
I=-3A
D
4
2
GS
-V
0
0246810
Q(nC)
, TOTAL GATE CHARGE
g
Fig. 21 Gate Charge
10
(A)
1
AIN
D
-I , D
0.1
0.01
0.1 1 10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
T = 150°C
J(max)
T = 25°C
A
V = -10V
GS
Single Pulse
DUT on 1 * MRP Board
-V , DRAIN-SOURCE VOLTAGE (V)
DS
W
P = 1ms
W
Fig. 22 SOA, Safe Operation Area
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
r(t), TRANSIENT THERMAL RESISTANCE
0.001
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
D = 0.9
R (t) = r(t) * R
θθ
JA JA
R = 164C/W
θ
JA
Duty Cycle, D = t1/ t2
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 23 Transi ent Ther m al Resistance
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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θ
DMG6602SVT
Package Outline Dimensions
ADVANCE INFORMATION
E1
A2
A
A1
D
e1
E
L2
c
L
4x 1
e
6x b
θ
TSOT26
Dim Min Max Typ
A
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b 0.30 0.45
c 0.12 0.20
e
e1
L 0.30 0.50
L2
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
1.00
−
− −
− −
− −
− −
− −
− −
−
−
−
2.90
2.80
1.60
−
−
0.95
1.90
0.25
−
Suggested Pad Layout
Y1
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
C C
X (6x)
Y (6x)
Dimensions Value (in mm)
C 0.950
X 0.700
Y 1.000
Y1 3.199
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
ADVANCE INFORMATION
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMG6602SVT
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
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