Diodes DMG6601LVT User Manual

Product Summary

Device V

Q1 30V

Q2 -30V

R

(BR)DSS

55m @ V

65m @ VGS = 4.5V TSOT26 3.6A

110m @ V

142m @ VGS = -4.5V TSOT26 -2.1A

max Package

DS(ON)

= 10V TSOT26 3.8A

GS

= -10V TSOT26 -2.5A

GS

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

ADVANCE INFORMTION

 Backlighting
 Power Management Functions
 DC-DC Converters

TSOT26

Top View

G1

S2

G2

1

2

3

max

I

D

TA = +25°C

Top View

DMG6601LVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

 Complementary MOSFET
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TSOT26
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  NiPdAu over Copper Leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

D1

Q1

6

D1

5

S1

G1

4

D2

S1

N-Channel P-Channel

Device Schematic

e4

D2

Q2

G2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMG6601LVT-7 TSOT26 3K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

66G

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

66G = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 9

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August 2013

© Diodes Incorporated



)

g

g

g

)

r

)

Maximum Ratings - Q1 and Q2 (@T

Characteristic Symbol Q1 Q2 Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMTION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

T

Steady

State

t<10s

= +25°C, unless otherwise specified.)

A

T

A

A

T

A

T

A

T

A

= +25°C

= +25°C
= +70°C
= +25°C
= +70°C

TA = +70°C
Steady state
t<10s 103

= +25°C

T

A

TA = +70°C
Steady state
t<10s 67

V

DSS

V

GSS

I

I

I

I

DM

P

R

P

R

R

T

J, TSTG

DMG6601LVT

D

D

S

D

JA



D

JA



JC

30 -30 V

±12 ±12 V

3.8

3.0

4.5

3.4

-2.5

-2

-3

-2.3

A

A

1.5 -1.5 A
20 -15 A

0.85

0.54
147

1.3

0.83

W

°C/W

W

96

°C/W

36

-55 to +150 °C

Electrical Characteristics - Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 1 1.5 V

- 34 55

- 38 65
49 85

|

- 6 - S

- 0.75 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 3.4A

V

m

GS

V

= 4.5V, ID = 3A

GS

V

= 2.5V, ID = 2A

GS

VDS = 5V, ID = 3.4A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 422 - pF

- 41 - pF

- 39 - pF

1.26 - 

- 5.4 - nC

12.3 - nC

- 0.8 - nC

- 1.2 - nC

- 1.6 - ns

- 7.4 - ns

- 31.2 - ns

- 15.6 - ns

2 of 9

= 15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 10V, VDS = 15V,

GS

I

= 3.1A

D

V

= 15V, VGS = 10V,

DS

= 4.7, RG =3,

R

L

August 2013

© Diodes Incorporated

)

g

g

g

)

r

)

RAIN

CUR

R

N

T

R

C

U

R

R

DMG6601LVT

Electrical Characteristics - Q2 (@T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = -4.5V) Qg

ADVANCE INFORMTION

Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

BV

V

DSS

DSS

I

GSS

GS(th

-30 - - V

- - -1 A

- - ±100 nA

-0.4 -0.8 -1.2 V

- 70 110

R

DS (ON)

- 81 142
105 190

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R

- 5.3 - S

- -0.8 -1.0 V

- 541 - pF

- 46 - pF

- 43 - pF

- 16.9 - 

- 6.5 - nC

13.8 - nC

Q
Q

t

D(on

t

D(off

s

d

t

t

f

- 1.0 - nC

- 1.6 - nC

- 1.7 - ns

- 4.6 - ns

- 18.3 - ns

- 2.2 - ns

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V
VGS = ±12V, VDS = 0V

VDS = VGS, ID = -250A
V

= -10V, ID = -2.3A

m

GS

V

= -4.5V, ID = -2A

GS

V

= -2.5V, ID = -1A

GS

VDS = -5V, ID = -2.3A
VGS = 0V, IS = -1A

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= -10V, VDS = -15V,

V

GS

= -2.3A

I

D

= -15V, VGS = -10V,

V

DS

= 6, RG = 3,

R

L

N Channel - Q1

20

16

V= 10V

GS

V= 5.0V

GS

V= 4.5V

GS

(A)

E

12

8

D

I, D

4

0

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Character istic

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

V= 4.0V

V= 3.5V

GS

V= 2.5V

GS

GS

V= 3.0V

GS

20

V = 5.0VDS

15

ENT (A)

10

AIN

V= 2.0V

GS

D

I, D

5

0

01 234

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T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transf er Characteristics

© Diodes Incorporated

August 2013