Diodes DMG6601LVT User Manual

Product Summary

Device V

Q1 30V

Q2 -30V

R

(BR)DSS

55m @ V

65m @ VGS = 4.5V TSOT26 3.6A

110m @ V

142m @ VGS = -4.5V TSOT26 -2.1A

max Package

DS(ON)

= 10V TSOT26 3.8A

GS

= -10V TSOT26 -2.5A

GS

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(ON)

ideal for high efficiency power management applications.

Applications

ADVANCE INFORMTION

 Backlighting
 Power Management Functions
 DC-DC Converters

TSOT26

Top View

G1

S2

G2

1

2

3

max

I

D

TA = +25°C

Top View

DMG6601LVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

 Complementary MOSFET
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TSOT26
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  NiPdAu over Copper Leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

D1

Q1

6

D1

5

S1

G1

4

D2

S1

N-Channel P-Channel

Device Schematic

e4

D2

Q2

G2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMG6601LVT-7 TSOT26 3K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

66G

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

66G = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 9

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August 2013

© Diodes Incorporated



)

g

g

g

)

r

)

Maximum Ratings - Q1 and Q2 (@T

Characteristic Symbol Q1 Q2 Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMTION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

T

Steady

State

t<10s

= +25°C, unless otherwise specified.)

A

T

A

A

T

A

T

A

T

A

= +25°C

= +25°C
= +70°C
= +25°C
= +70°C

TA = +70°C
Steady state
t<10s 103

= +25°C

T

A

TA = +70°C
Steady state
t<10s 67

V

DSS

V

GSS

I

I

I

I

DM

P

R

P

R

R

T

J, TSTG

DMG6601LVT

D

D

S

D

JA



D

JA



JC

30 -30 V

±12 ±12 V

3.8

3.0

4.5

3.4

-2.5

-2

-3

-2.3

A

A

1.5 -1.5 A
20 -15 A

0.85

0.54
147

1.3

0.83

W

°C/W

W

96

°C/W

36

-55 to +150 °C

Electrical Characteristics - Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 1 1.5 V

- 34 55

- 38 65
49 85

|

- 6 - S

- 0.75 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 3.4A

V

m

GS

V

= 4.5V, ID = 3A

GS

V

= 2.5V, ID = 2A

GS

VDS = 5V, ID = 3.4A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 422 - pF

- 41 - pF

- 39 - pF

1.26 - 

- 5.4 - nC

12.3 - nC

- 0.8 - nC

- 1.2 - nC

- 1.6 - ns

- 7.4 - ns

- 31.2 - ns

- 15.6 - ns

2 of 9

= 15V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 10V, VDS = 15V,

GS

I

= 3.1A

D

V

= 15V, VGS = 10V,

DS

= 4.7, RG =3,

R

L

August 2013

© Diodes Incorporated

)

g

g

g

)

r

)

RAIN

CUR

R

N

T

R

C

U

R

R

DMG6601LVT

Electrical Characteristics - Q2 (@T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = -4.5V) Qg

ADVANCE INFORMTION

Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

BV

V

DSS

DSS

I

GSS

GS(th

-30 - - V

- - -1 A

- - ±100 nA

-0.4 -0.8 -1.2 V

- 70 110

R

DS (ON)

- 81 142
105 190

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R

- 5.3 - S

- -0.8 -1.0 V

- 541 - pF

- 46 - pF

- 43 - pF

- 16.9 - 

- 6.5 - nC

13.8 - nC

Q
Q

t

D(on

t

D(off

s

d

t

t

f

- 1.0 - nC

- 1.6 - nC

- 1.7 - ns

- 4.6 - ns

- 18.3 - ns

- 2.2 - ns

VGS = 0V, ID = -250A
VDS = -30V, VGS = 0V
VGS = ±12V, VDS = 0V

VDS = VGS, ID = -250A
V

= -10V, ID = -2.3A

m

GS

V

= -4.5V, ID = -2A

GS

V

= -2.5V, ID = -1A

GS

VDS = -5V, ID = -2.3A
VGS = 0V, IS = -1A

V

= -15V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= -10V, VDS = -15V,

V

GS

= -2.3A

I

D

= -15V, VGS = -10V,

V

DS

= 6, RG = 3,

R

L

N Channel - Q1

20

16

V= 10V

GS

V= 5.0V

GS

V= 4.5V

GS

(A)

E

12

8

D

I, D

4

0

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Character istic

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

V= 4.0V

V= 3.5V

GS

V= 2.5V

GS

GS

V= 3.0V

GS

20

V = 5.0VDS

15

ENT (A)

10

AIN

V= 2.0V

GS

D

I, D

5

0

01 234

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T = 150°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transf er Characteristics

© Diodes Incorporated

August 2013

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

O

O

R

RAIN-SOUR

C

R

R

OUR

CE ON-R

TANC

G

H

R

H

O

O

G

0.08



0.07

0.06

ESISTANCE ( )

0.05

0.04

CE

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

0 5 10 15 20

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance vs.

ADVANCE INFORMTION

0.10



0.09

Drain Current and Gate Voltage

V = 4.5VGS

0.08

0.07

N-RESISTANCE ( )

0.06

0.05

URCE

0.04

0.03

0.02

0.01

DS(ON)

R , DRAIN-S

0

0 2 4 6 8 101214161820

I , DRAIN CURRENT (A)

D

Fig. 5 Typical On-Resistance vs.

Drain Current and Temperature

0.10



0.09

E ( )

0.08

0.07

ESIS

0.06

V= V

0.05

GS

I= 5A

0.04

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 7 On-Resistance Variation with Temperature

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

D

4.5

V = 2.5VGS

V = 4.5VGS

T = 150°C

V=V

10

GS

I= 10A

D

V = 10VGS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

DMG6601LVT

0.08



E ( )

0.07

0.06

ESIS

0.05

0.04

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

2345 678910

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Drain-Source On- Resistance

vs. Gate-Source Voltage

1.8

1.6

E

1.4

1.2

, D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

1.6

1.4

E (V)

1.2

LTA

1.0

LD V

0.8

ES

0.6

ATE T

0.4

0.2

GS(th)

V,

0



-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

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I= 2AD

I = 250µA

D

V=V

GS

I = 10A

D

I= 1mA

D

10

V = 4.5V

GS

I= 5A

D





© Diodes Incorporated

August 2013

OUR

CE C

URR

C

UNC

T

ON CAPACIT

C

F

GATE THRESH

O

OLTAG

T

R

T

T

HER

R

TANC

20

18

16

14

ENT (A)

12

10

T = 150°C

8

A

T = 125°C

A

6

S

I, S

4

2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forward Voltage vs. Current

ADVANCE INFORMTION

10

E (V)

8

6

LD V

V= 15V

DS

I= A

3.1

D

T = 85°C

A

T = 25°C

A

T = -55°C

A

DMG6601LVT

1,000

)

C

E (p

AN

100

I

, J

T

f = 1MHz

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

iss

C

oss

C

rss

4

2

GS

V

0

02 468101214

Q(nC)

, TOTAL GATE CHARGE

g

Fig. 11 Gate Charge

1

D = 0.9
D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R



JA JA

R = 143°C/W



JA

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Fig. 12 Transient Thermal Resistance

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

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RAIN CUR

REN

T

RAIN CUR

R

N

R

R

OUR

CE ON-R

TANC

R

RAIN-SOUR

CE O

N-R

TAN

C

O

O

R

RAIN-SOUR

C

10

8

(A)

6

V= -10V

GS

V= -5.0V

GS

V= -4.5V

GS

V= -3.0V

GS

V= -2.5V

GS

4

D

-I , D
2

0

0 0.5 1.0 1.5 2.0

-V , DRAIN -SOURCE VOLTAGE (V)

ADVANCE INFORMTION

0.20



0.18

E ( )

DS

Fig. 13 Typical Output Characteristics

0.16

0.14

ESIS

0.12

0.10

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0

02 46 810

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 15 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.20



V= -4.5V

GS

0.16

0.12

N-RESISTANCE ( )

URCE

0.08

0.04

V= -4.0V

GS

V= -3.5V

GS

V= -2.0V

V = -2.5V

GS

GS

V = -4.5V

GS

V = -10V

GS

T = 150CA

T = 125CA

T = 85CA

T = 25CA

T = -55CA

P Channel - Q2

T (A)
E

-I , D



E ( )

ESIS

, D

DS(ON)

E

, D

DS(ON)

DMG6601LVT

10

V = -5.0V

DS

8

6

4

D

0.16

0.12

0.08

0.04

1.8

1.6

1.4

1.2

1.0

ON-RESISTANCE (NORMALIZED)

0.8

2

0

T = 150CA

T = 125CA

01 2 34

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85CA

T = 25CA

T = -55CA

Fig. 14 Typical Transfer Characteristics

I= -2A

D

0

2345678910

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 16 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

V = -10V

GS

I = -10A

D

V = -4.5V

GS

I = -5A

D

DS(ON)

R , DRAIN-S

0

02 4 6 810

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 17 Typical On-Resistance vs.

Drain Current and Temperature

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

6 of 9

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0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 18 On-Resistance Variation with Temperature

August 2013

© Diodes Incorporated

R

R

O

URCE ON-R

TANC

G

H

RESH

O

O

G

OUR

CE CUR

RENT

C

UNC

TIO

N CAPACITAN

C

F

GAT

OUR

C

OLTAG

0.16



E ( )

0.12

ESIS

0.08

AIN-S

0.04

, D

DS(on)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 19 On-Resistance Variation with Temperature

ADVANCE INFORMTION

10

8

(A)

V=5V

-4.

GS

I= A

-5

D

V= -10V

GS

I= A

D

-10

DMG6601LVT

1.6

1.4

E (V)

1.2

LTA

1.0

LD V

0.8

0.6

ATE T

0.4

0.2

GS(TH)

-V ,
0



-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 20 Gate Threshold Variati on vs. Ambient Temperature

1,000

)

E (p

-I = 1mAD

-I = 250µA

D

f = 1MHz

C

iss

6

4

SD

T= 150CA

T= 125CA

T= 85CA

T= 25CA

T= -55CA

S

-I , S
2

0

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 21 Diode Forward Voltage vs. Current

10

8

E (V)

V = -15V

DS

I= -2.3A

D

E V

6

4

E-S

2

GS

-V ,

100

C

oss

C

, J

T

10

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

DS

rss

Fig. 22 Typical Juncti on Capacitance

0

02 46 8101214

Q , TOTAL GATE CHARGE (nC)

g

Fig. 23 Gate-C harge Charact eristics

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

7 of 9

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T

R

T T

HER

R

TANC

A



ADVANCE INFORMTION

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

E1

A2

A

1

D

e1

e

6x b

Suggested Pad Layout

Y1

E

C C

D = 0.9

t1, PULSE DURATION TIMES (sec)

Fig. 24 Transient Thermal Resistance

c

L2

L

4x 1



Dimensions

C 0.950
X 0.700
Y 1.000

Y1 3.199

Y (6x)

R (t) = r(t) * R



JA JA

R = 143°C/W



JA

Duty Cycle, D = t1/ t2

TSOT26

Dim Min Max Typ

A

A1 0.01 0.10
A2 0.84 0.90

D
E

E1

b 0.30 0.45

c 0.12 0.20
e

e1

L 0.30 0.50

L2

θ 0° 8° 4°

θ1 4° 12°

All Dimensions in mm

1.00



 
 
 

 
 

 

Value

(in mm)





2.90

2.80

1.60




0.95

1.90

0.25



DMG6601LVT

X (6x)

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

8 of 9

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© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMTION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DMG6601LVT

IMPORTANT NOTICE

LIFE SUPPORT

DMG6601LVT

Document number: DS35405 Rev. 4 - 2

9 of 9

www.diodes.com

August 2013

© Diodes Incorporated