Diodes DMG6402LVT User Manual

DMG6402LVT

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

R

(BR)DSS

30V

30m @ V

42m @ VGS = 4.5V

DS(on) max

GS

= 10V

D

TA = +25°C

6A

5A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters

 Power Management Functions

ADVANCE INFORMATION

 Backlighting

NEW PRODUCT

TSOT26

Top View

D

1

D

2

3

G

Top View

Pin Configuration

Features and Benefits

 Low Input Capacitance

 Low On-Resistance

 Fast Switching Speed

 Totally Lead-Free Finish; RoHS compliant (Note 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TSOT26

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Tin Finish annealed over Copper leadframe.

Body
Diode

e3

Solderable per MIL-STD-202, Method 208

 Weight: 0.013 grams (approximate)

Drain

D

6

D

5

4

S

Gate

Source

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMG6402LVT-7 TSOT26 3,000/Tape & Reel

DMG6402LVT-13 TSOT26 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

6402

YM

6402 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMG6402LVT

Document number: DS35831 Rev. 3 - 2

 HYPERLINK "http://www.diodes.com"

1 of 6

May 2013

© Diodes Incorporated



)

g

g

g

)

r

)

DMG6402LVT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Steady

State

t<10s

Steady

State

t<10s

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

30 V

±20 V

6.0

4.8

7.5

5.9

5.0

4.0

6

4.8

A

A

A

A

2 A

31 A

Thermal Characteristics (@T

ADVANCE INFORMATION

NEW PRODUCT

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

A

TA = +70°C

Steady state

t<10s 50

P

R

R

T

J, TSTG

D

JA



JC

1.75

1.1

W

72

°C/W

23

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

30

 
 
 

1

100

V

VGS = 0V, ID = 250μA

μA

V

= 30V, VGS = 0V

nA

DS

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS(ON)

|Y

V

fs

SD

| 

1 1.5 2 V






22 30

32 42

10



0.75 1.0 V

VDS = VGS, ID = 250μA
V

= 10V, ID = 7A

m

GS

VGS = 4.5V, ID = 5.6A

S

V

= 5V, ID = 7A

DS

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C



iss

C



oss

C



rss

R



G

Q



Q

s

Q

d

t

D(on

t

t

D(off

t

f








498

52

45

2.4

11.4

1.4
2

3.4

6.2

13.9

2.8





pF

= 15V, VGS = 0V

V

DS

f = 1.0MHz

  VDS = 0V, VGS = 0V, f = 1.0MHz



nC

= 10V, VDS = 15V, ID = 5.8A

V

GS






nS

V

= 15V, VGS = 10V,

DD

= 2.6Ω, RG = 3Ω

R

L



DMG6402LVT

Document number: DS35831 Rev. 3 - 2

2 of 6

www.diodes.com

May 2013

© Diodes Incorporated