Diodes DMG6301UDW User Manual
DMG6301UDW
25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
R
(BR)DSS
25V
4 @ V
5 @ VGS = 2.7V
DS(ON)
GS
= 4.5V
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
) and yet maintain superior switching
DS(ON)
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
NEW PRODUCT
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
ESD HBM >6kV
SOT363
Top View
I
D
TA = +25°C
0.24A
0.22A
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate (>6kV Human Body Model)
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
D
2
S
2
S
G
1
1
D
G
1
2
Top View
Internal Schematic
G1
Gate Protect ion
Diode
D1
G2
S1
Equivalent circuit
Gate Protec tion
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMG6301UDW-7 Standard SOT363 3,000/Tape & Reel
DMG6301UDW-13 Standard SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5W= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
1 of 6
www.diodes.com
D2
Diode
© Diodes Incorporated
S2
February 2014
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
4.5V (Note 6)
GS =
2.7V (Note 6)
GS =
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics
NEW PRODUCT
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
DMG6301UDW
Characteristic Symbol Value Units
V
DSS
V
GSS
T
= +25°C
A
= +70°C
T
A
T
= +25°C
A
= +70°C
T
A
I
D
I
D
I
DM
Characteristic Symbol Value Units
(Note 5)
(Note 6) 0.37
(Note 5)
(Note 6) 334
(Note 6)
P
R
R
T
J, TSTG
JA
JC
D
25 V
8 V
0.24
0.19
0.22
0.17
A
A
1.5 A
0.3
W
409
°C/W
137
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
DSS
25
— —
— —
—
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
R
DS(ON)
|Y
V
GS(th)
0.65 0.85 1.5 V
— 3.8
— 3.1
| ⎯
fs
SD
— 0.76 1.2 V
1
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
C
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
gs
r
f
— 27.9
— 6.1 —
— 2 —
— 0.36 —
— 0.06 —
— 0.04 —
— 2.9 —
— 1.8 —
— 6.6 —
— 2.3 —
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
2 of 6
www.diodes.com
— V
1 µA
100 nA
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
VDS = VGS, ID = 250A
4
5
⎯
V
V
S
V
VDS = VGS, ID = 0.25A
—
V
pF
f = 1MHz
V
nC
I
V
nS
I
= 4.5V, ID = 0.4A
GS
= 2.7V, ID = 0.2A
GS
= 5V, ID =0.4A
DS
= 10V, VGS = 0V,
DS
= 4.5V, VDS = 5V,
GS
= 0.2A
D
= 4.5V, VDS = 6V
GS
= 0.5A, R
D
= 50
G
February 2014
© Diodes Incorporated
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