Diodes DMG5802LFX User Manual

DMG5802LFX

Product Summary

I

V

R

(BR)DSS

24V

15m @ V

20m @ VGS = 2.5V

DS(ON)

GS

= 4.5V

D

TA = +25°C

6.5A

5.6A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters
 Power management functions

ESD PROTECTED TO 3kV

Top View

W-DFN5020-6

Features

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected up to 3kV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: W-DFN5020-6
 Case Material: Molded Plastic, “Green” Molding Compound. UL

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram Below
 Weight: 0.03 grams (approximate)

Bottom View

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Flammability Classification Rating 94V-0

S1S1G1

D1/D2

S2S2G2

Top View

Pin-Out

G1

D1

G2

S1

Equivalent Circuit

D2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMG5802LFX-7 W-DFN5020-6 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ME

YM

DMG5802LFX

Document number: DS35009 Rev. 5 - 2

ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

)

g

g

g

)

r

)

DMG5802LFX

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 2.5V

Steady

State

Steady

State

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V Qg
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

= +25°C, unless otherwise specified.)

A

BV

V

DSS

I

GSS

GS(th

DSS

24 — — V
— — 1.0 A
— — ±10 A

0.6 0.9 1.5 V
— 11 15

R

DS (ON)

— 12 17
— 13 18
— 14 20

|Y

fs

V

SD

C

iss

C

oss

C

rss

R

— 17 — S

|

— 0.6 0.9 V

— 1066.4 —
— 132.0 —
— 127.1 —
— 1.47 — 
— 14.5 —
— 31.3 —

Q
Q

t

D(on

t

D(off

s

d

t

t

f

— 2.0 —
— 3.1 —
— 3.69 — ns
— 13.43 — ns
— 32.18 — ns
— 22.45 — ns

V

DSS

V

GSS

I

D

I

D

I

DM

P

D

JA

T

, T

J

STG

24 V

±12 V

6.5

5.2

5.6

4.5

A

A

70 A

0.98 W

126.5 °C/W

-55 to +150 °C

VGS = 0V, ID = 250A
VDS = 24V, VGS = 0V
VGS = ±12V, VDS = 0V

VDS = VGS, ID = 250A

= 4.5V, ID = 6.5A

V

GS

V

= 4V, ID = 5.6A

m

GS

V

= 3.1V, ID = 5.6A

GS

V

= 2.5V, ID = 5.6A

GS

VDS = 5V, ID = 6.5A
VGS = 0V, IS = 1A

= 15V, VGS = 0V,

V

DS

pF

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 5.8A

nC

= 10V, VDS = 15V,

V

GS

= 5.8A

I

D

= 10V, VDS = 15V,

V

GS

R

= 2.1, RG = 3

L

DMG5802LFX

Document number: DS35009 Rev. 5 - 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated