Diodes DMG4N65CTI User Manual

Y

Product Summary

Package

ITO220-3 4.0 A

V

(BR)DSS

650V

R

3.0Ω@V

DS(ON)

GS

= 10V

Description

This new generation complementary MOSFET features low on­resistance and fast switching, making it ideal for high efficiency power
management applications.

Applications

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

ADVANCE INFORMATIO

ITO-220AB

Bottom View Top View

I

D

TC = 25°C

DMG4N65CTI

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Input Capacitance

• High BVDss rating for power application

• Low Input/Output Leakage

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: ITO220-AB

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish-Matte Tin annealed over Copper Leadframe

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram Below

• Weight: 0.008 grams (approximate)

D

G

S

Equivalent Circuit

Top View

Pin Out Configuration

Ordering Information (Note 4)

Part Number Case Packaging

DMG4N65CTI ITO220-AB 50 pieces/tube

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

4N65CTI

YWW

DMG4N65CTI

Document number: DS36122 Rev. 1 - 2

4N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 12 = 2012)
WW = Week (01 - 53)

1 of 6

www.diodes.com

November 2012

© Diodes Incorporated

)

)

g

g

g

)

r

)

r

r

r

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note
5,6) V

= 10V

GS

Steady

State

T

= +25°C

C

= +70°C

T

C

Pulsed Drain Current (Note 7)
Avalanche Current (Note 8 ) VDD = 100V, VGS = 10V, L = 60mH IAS
Repetitive avalanche energy (Note 7)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Thermal Resistance, Junction to Case @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

ADVANCE INFORMATIO

DMG4N65CTI

V

DSS

V

GSS

I

D

I

DM

E

AS

P

D

θJA

θJC

T

, T

J

STG

650 V
±30 V

4.0

3.0

A

6 A

3.9 A

456 mJ

8.35 W

12.36 °C/W

10.69 °C/W

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

650 - - V

- - 1.0

- - ±100 nA

VGS = 0V, ID = 250μA

μA

VDS = 650V, VGS = 0V

VGS = ±30V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

R

DS (ON

|Y
V

GS(th

fs

SD

|

3 - 5 V

- 2.1 3.0

- 3.7 - S

- 0.7 1.0 V

VDS = VGS, ID = 250μA

Ω

VGS = 10V, ID = 2A

VDS = 40V, ID = 2A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance

C

C

oss

C

rss

R
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time

Q
Q

t

D(on

t

D(off

t

t

t

Q

Notes: 5. Device mounted on an infinite heatsink

6. Drain current limited by maximum junction temperature.

7. Repetitive rating, pulse width limited by junction temperature.

8. I

and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

AS

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

iss

s

d

f

r

- 900 -

-

-

-

13.5

-

-

-

15.1

-

13.8

-

-

­515

-

2330

-

50

1.1

2.4

2.7

3.8

40
16

V

-

pF

-

-

Ω

-

-

nC

-

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

GS

I

D

- ns

- ns

- ns

V

GS

R

G

- ns

- ns

- nC

dI/dt = 100A/μs, V
I

= 4A Body Diode Reverse Recovery Charge

F

= 25V, VGS = 0V,

= 10V, VDS = 520V,

= 4A

= 10V, VDS = 325V,

= 25Ω, ID = 4A

DS

= 100V,

DMG4N65CTI

Document number: DS36122 Rev. 1 - 2

2 of 6

www.diodes.com

November 2012

© Diodes Incorporated