Page 1
2
Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temp.
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
• 100% UIS and R
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Diodes Schottky Integrated MOSFET
Tested
g
Top View
DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.072 grams (approximate)
Q1 Q
D2
D2
G1
S1
Internal Schematic
Top View
G2
S2/D1
S2/D1
S2/D1
D
1
G
1
S
1
N-Channel MOSFET N-Channel MOSFET
G
2
D
2
S
2
Maximum Ratings – Q1 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
Steady
State
T
= 25°C
A
T
= 85°C
A
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AR
30 V
±12 V
9.5
7.2
A
40 A
13 A
25.4 mJ
Maximum Ratings – Q2 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
Steady
State
T
= 25°C
A
= 85°C
T
A
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AR
30 V
±25 V
9.5
7.5
A
40 A
13 A
25.4 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
= 25°C (Note 3) R
A
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
1 of 9
www.diodes.com
P
D
θJA
, T
T
J
STG
1.19 W
107 °C/W
-55 to +150 °C
August 2010
© Diodes Incorporated
Page 2
)
g
g
g
g
g
r
R
C
URRENT
R
CUR
R
T
Electrical Characteristics – Q1 @T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
NEW PRODUCT
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
30
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
30 - - V
BV
I
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
R
Q
Q
Q
Q
t
D(on)
t
D(off)
I
oss
t
t
DSS
fs
SD
S
iss
rss
s
d
f
|
- - 0.1 mA
- - ±100 nA
1.0 - 2.4 V
-
- 14 - S
- 0.4 0.6 V
- - 5 A -
- 1932 -
- 154 -
- 121 -
- 2.68 -
- 18.1 -
- 42.0 -
- 4.5 -
- 4.0 -
- 6.16 -
- 7.22 -
- 36.76 -
- 5.38 -
30
10
12
15
18
DMG4932LSD
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
= 10V, ID = 9A
V
mΩ
GS
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A
pF
pF
= 15V, VGS = 0V, f = 1.0MHz
V
DS
pF
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
V
= 15V, VGS = 10V, ID = 9A
DS
nC
nC
ns
ns
V
= 10V, VDS = 15V,
GS
ns
= 3Ω, RL = 1.7Ω
R
G
ns
25
(A)
20
EN
15
AIN
10
D
I, D
(A)
AIN
D
I, D
25
20
15
10
V = 4.5V
V = 4.0V
GS
V = 3.5V
GS
V = 3.0V
GS
GS
V = 2.5V
GS
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0VGSV = 2.2V
GS
Fig. 1 Typical Output Characteristic
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
2 of 9
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V = 5V
DS
V = 150°C
GS
V = 125°C
GS
V = 85°C
5
0
00.511.522.53
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
GS
V = 25°C
GS
V = -55°C
GS
August 2010
© Diodes Incorporated
Page 3
R
RAIN-SOUR
CE O
N
R
TAN
C
OUR
C
CUR
R
T
NEW PRODUCT
Ω
0.020
0.015
0.04
Ω
E ( )
V = 4.5V
GS
0.03
DMG4932LSD
ESIS
-
V = 4.5V
0.010
GS
V = 10V
GS
0.005
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0102015 25 30
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Ty pical On-Resistance
vs. Drain Current and Gate Voltage
1.6
V = 4.5V
GS
I = 5A
1.4
D
1.2
V = 10V
GS
I = 10A
D
0.02
0.01
, D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.03
Ω
0.02
V = 4.5V
GS
I = 5A
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1.0
DSON
R , DRAIN-SOURCE
0.8
ON-RESIST ANCE (NORMA LIZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT T EMPERA T URE (°C)
A
Fig. 5 On-R esistance Variation with Temperature
3.0
2.5
0.01
DSON
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 6 On-Resistance Variation with Temperature
30
25
V = 10V
GS
I = 10A
D
(A)
2.0
I = 100mA
D
1.5
1.0
0.5
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
20
EN
15
E
T = 25°C
A
10
S
I, S
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Dio de Forward Voltage vs . Cur r ent
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
3 of 9
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August 2010
© Diodes Incorporated
Page 4
GE CUR
RENT
GAT
OUR
C
OLTAG
C, CAPACITANC
F
NEW PRODUCT
100,000
10,000
(µA)
1,000
DSS
I, LEAKA
T = 100°C
A
T = 85°C
A
100
10
T = 25°C
A
1
0102030
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Leakage Curren t
10
8
E (V)
V = 15V
6
E V
4
E-S
2
GS
V,
0
0 5 10 15 20 25 30 35 40 45 50
DS
I = 9A
D
Q , TOT AL GATE CHARGE (nC)
g
Fig. 10 Gate-Charge Characteristics
vs. Drain-S ource Volta ge
10,000
f = 1MHz
DMG4932LSD
)
C
iss
1,000
E (p
C
oss
100
10
0 5 10 15 20 25 30
C
rss
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 Typical Total Capacitance
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
4 of 9
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August 2010
© Diodes Incorporated
Page 5
)
g
g
g
g
g
r
R
CUR
RENT
R
C
URRENT
Electrical Characteristics – Q2 @T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
NEW PRODUCT
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
25
(A)
20
15
Characteristic Symbol Min Typ Max Unit Test Condition
V = 4.5V
GS
V = 4.0V
GS
V = 3.5V
GS
V = 3.0V
GS
= 25°C unless otherwise specified
A
30 - - V
BV
I
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
R
Q
Q
Q
Q
t
D(on)
t
D(off)
DSS
fs
SD
iss
oss
rss
t
t
f
|
s
d
- - 1 μA
- - +100
- - -800
1.0 - 2.3 V
-
- 8 - S
- 0.65 1.0 V
- 675 -
- 98 -
- 90 -
- 1.6 -
- 7.8 -
- 16.0 -
- 1.9 -
- 2.6 -
- 5.05 -
- 9.21 -
- 20.76 -
- 4.94 -
30
25
(A)
20
15
12
16
15.8
23
V = 5V
DS
DMG4932LSD
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
V
= +25V, VDS = 0V
GS
nA
mΩ
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
= -25V, VDS = 0V
V
GS
VDS = VGS, ID = 250μA
= 10V, ID = 9A
V
GS
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A
= 15V, VGS = 0V,
V
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 15V, VGS = 10V, ID = 9A
DS
V
= 10V, VDS = 15V,
GS
= 3Ω, RL = 1.7Ω
R
G
AIN
D
I, D
10
V = 2.5V
GS
5
V = 2.2V
GS
V = 2.0V
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Fig. 12 Typical Output Characteristic
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
5 of 9
www.diodes.com
AIN
10
D
I, D
5
V = 150°C
GS
V = 125°C
GS
V = 85°C
GS
V = 25°C
GS
V = -55°C
GS
0
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 13 T ypical Transfer Characteristic
August 2010
© Diodes Incorporated
Page 6
R
R
OUR
CE O
R
TANC
R
R
OUR
C
R
RAIN-SOUR
CE O
N-R
TAN
C
GAT
THRESH
O
OLT
G
O
U
R
C
C
U
R
R
N
T
NEW PRODUCT
Ω
0.020
0.015
V = 4.5V
GS
0.04
Ω
E ( )
V = 4.5V
GS
0.03
ESIS
N-
V = 10V
0.010
0.005
GS
0.02
AIN-S
0.01
DMG4932LSD
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
, D
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0102015 25 30
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 14 Typica l O n-Resistance
vs. Drain Current and Gate Voltage
1.6
V = 4.5V
GS
I = 5A
D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain C urrent an d Temperatu r e
0.03
Ω
E ( )
1.4
E
1.2
V = 10V
GS
I = 10A
D
ESIS
0.02
V = 4.5V
GS
I = 5A
D
AIN-S
1.0
, D
DSON
0.01
V = 10V
GS
I = 10A
D
0.8
ON-RESISTA NC E (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA T URE (°C)
A
Fig. 16 On-Resistance Variation with Temperature
3.0
E (V)
2.5
, D
DSON
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 17 On-Resistance Variation with Temperature
30
25
A
(A)
2.0
LD V
1.5
I = 1mA
D
E
1.0
I = 250µA
D
0.5
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 18 Gat e Threshold Varia t ion vs. Ambient Temperature
20
E
15
E
T = 25°C
A
10
S
I, S
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 19 Diode Forward Voltage vs. Current
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
6 of 9
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August 2010
© Diodes Incorporated
Page 7
GE CUR
R
N
T
GAT
OUR
C
OLTAG
C, CAPACITANC
F
R
OWER
T
R
T
T
HER
R
TANC
NEW PRODUCT
100,000
10,000
(nA)
E
1,000
DSS
I, LEAKA
T = 150°C
A
T = 125°C
A
T = 85°C
100
10
A
T = 25°C
A
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 20 Typical Leakage Current
10
8
E (V)
V = 15V
6
E V
4
E-S
2
GS
V,
0
0 5 10 15 20
DS
I = 9A
D
Q , TOT AL GATE CHARGE (nC)
g
Fig. 21 Gate-Charge Characteristics
vs. Drain-Source Voltage
10,000
)
1,000
E (p
100
10
0 5 10 15 20 25 30
C
iss
C
oss
C
rss
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 22 Typical Total Capacitance
f = 1MHz
10
9
(W)
8
7
6
5
ANSIENT P
4
3
2
(PK)
P , PEAK T
1. DUT Mounted on 1 x MRP FR-4 Board
1
2. T = 150°C, P = 1.12W(DC)
JD
0
0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 23 Single Pulse Maximum Power Dissipation
DMG4932LSD
Single Pulse
R = 113°C/W
θ
JA
R (t) = r(t) *
θ
JA
T - T = P * R (t)
JA JA
R
θ
JA
θ
1
E
D = 0.7
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
ANSIEN
r(t),
0.01
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
θ
JA
R = 113°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
0.001
0.00001 0.0001
0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Fig. 24 Transient Thermal Response
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
7 of 9
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August 2010
© Diodes Incorporated
Page 8
Ordering Information (Note 8)
Part Number Case Packaging
DMG4932LSD-13 SO-8 2500 / Tape & Reel
Notes: 8. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NEW PRODUCT
(Top View)
8 5
G4932LD
YY
WW
1 4
Package Outline Dimensions
E1
E
A1
Detail ‘A’
L
0.254
Gaug e Plane
Seating Plane
7°~9
°
A3
h
°
45
e
b
D
A2
A
Suggested Pad Layout
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
X
C1
C2
Y
8 of 9
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Logo
Part no.
Xth week: 01 ~ 53
Year: “10” = 2010
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
Detail ‘A’
Dimensions Value (in mm)
X 0.60
Y 1.55
C1 5.4
C2 1.27
h - 0.35
L 0.62 0.82
θ
All Dimensions in mm
SO-8
0° 8°
DMG4932LSD
August 2010
© Diodes Incorporated
Page 9
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
NEW PRODUCT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMG4932LSD
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
9 of 9
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© Diodes Incorporated
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