Diodes DMG4932LSD User Manual
2
Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temp.
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
• 100% UIS and R
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Diodes Schottky Integrated MOSFET
Tested
g
Top View
DMG4932LSD
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.072 grams (approximate)
Q1 Q
D2
D2
G1
S1
Internal Schematic
Top View
G2
S2/D1
S2/D1
S2/D1
D
1
G
1
S
1
N-Channel MOSFET N-Channel MOSFET
G
2
D
2
S
2
Maximum Ratings – Q1 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
Steady
State
T
= 25°C
A
T
= 85°C
A
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AR
30 V
±12 V
9.5
7.2
A
40 A
13 A
25.4 mJ
Maximum Ratings – Q2 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH
Steady
State
T
= 25°C
A
= 85°C
T
A
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AR
30 V
±25 V
9.5
7.5
A
40 A
13 A
25.4 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
= 25°C (Note 3) R
A
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
1 of 9
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P
D
θJA
, T
T
J
STG
1.19 W
107 °C/W
-55 to +150 °C
August 2010
© Diodes Incorporated
)
g
g
g
g
g
r
R
C
URRENT
R
CUR
R
T
Electrical Characteristics – Q1 @T
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (4.5V)
NEW PRODUCT
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
30
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
30 - - V
BV
I
DSS
I
GSS
V
GS(th
R
DS (ON)
|Y
V
C
C
C
R
Q
Q
Q
Q
t
D(on)
t
D(off)
I
oss
t
t
DSS
fs
SD
S
iss
rss
s
d
f
|
- - 0.1 mA
- - ±100 nA
1.0 - 2.4 V
-
- 14 - S
- 0.4 0.6 V
- - 5 A -
- 1932 -
- 154 -
- 121 -
- 2.68 -
- 18.1 -
- 42.0 -
- 4.5 -
- 4.0 -
- 6.16 -
- 7.22 -
- 36.76 -
- 5.38 -
30
10
12
15
18
DMG4932LSD
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
= 10V, ID = 9A
V
mΩ
GS
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A
pF
pF
= 15V, VGS = 0V, f = 1.0MHz
V
DS
pF
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
V
= 15V, VGS = 10V, ID = 9A
DS
nC
nC
ns
ns
V
= 10V, VDS = 15V,
GS
ns
= 3Ω, RL = 1.7Ω
R
G
ns
25
(A)
20
EN
15
AIN
10
D
I, D
(A)
AIN
D
I, D
25
20
15
10
V = 4.5V
V = 4.0V
GS
V = 3.5V
GS
V = 3.0V
GS
GS
V = 2.5V
GS
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0VGSV = 2.2V
GS
Fig. 1 Typical Output Characteristic
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
2 of 9
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V = 5V
DS
V = 150°C
GS
V = 125°C
GS
V = 85°C
5
0
00.511.522.53
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
GS
V = 25°C
GS
V = -55°C
GS
August 2010
© Diodes Incorporated
R
RAIN-SOUR
CE O
N
R
TAN
C
OUR
C
CUR
R
T
NEW PRODUCT
Ω
0.020
0.015
0.04
Ω
E ( )
V = 4.5V
GS
0.03
DMG4932LSD
ESIS
-
V = 4.5V
0.010
GS
V = 10V
GS
0.005
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
0102015 25 30
5
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Ty pical On-Resistance
vs. Drain Current and Gate Voltage
1.6
V = 4.5V
GS
I = 5A
1.4
D
1.2
V = 10V
GS
I = 10A
D
0.02
0.01
, D
DS(ON)
0
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.03
Ω
0.02
V = 4.5V
GS
I = 5A
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1.0
DSON
R , DRAIN-SOURCE
0.8
ON-RESIST ANCE (NORMA LIZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT T EMPERA T URE (°C)
A
Fig. 5 On-R esistance Variation with Temperature
3.0
2.5
0.01
DSON
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
Fig. 6 On-Resistance Variation with Temperature
30
25
V = 10V
GS
I = 10A
D
(A)
2.0
I = 100mA
D
1.5
1.0
0.5
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
20
EN
15
E
T = 25°C
A
10
S
I, S
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Dio de Forward Voltage vs . Cur r ent
DMG4932LSD
Document number: DS32119 Rev. 4 - 2
3 of 9
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August 2010
© Diodes Incorporated
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