Diodes DMG4822SSD User Manual

4

8

5

Y

W

4

8

5

G4822S

Y

NEW PRODUCT

Product Summary

max

I

D

V

R

(BR)DSS

30V 20m @ VGS = 10V 10A

DS(ON)

max

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

 General Purpose Interfacing Switch
 Power Management Functions
 DC-DC Converters
 Analog Switch

S1

G1

S2

G2

TOP VIEW

Internal Schematic

DMG4822SSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Low Input/Output leakage
 Low Gate Resistance
 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.072 grams (approximate)

D2

S2

D1

D1

D2

D2

D1

G1

S1

N-Channel MOSFET

G2

N-Channel MOSFET

Ordering Information (Note 4)

Part Number Case Packaging

DMG4822SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMG4822SSD

Document number: DS35403 Rev. 2 - 2

D

Y WW

1

Chengdu A/T Site

G4822SD

Y W

1

Shanghai A/T Site

= Manufacturer’s Marking
G4822SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 7

www.diodes.com

February 2014

© Diodes Incorporated

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Pulsed Drain Current (Note 6)
Avalanche Current (Note 7 & 8)
Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

Steady

State

= +25°C

T

A

T

= +85°C

A

P

R

T

J, TSTG

JA

DMG4822SSD

V

DSS

V

GSS

I

D

I

DM

I

AR

E

AR

D

-55 to +150 °C

30 V

±25 V

10

6.6

A

60 A

1.68 A

12.8 mJ

1.42 W

88.4 °C/W

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1 - 3 V

- 13.4 20

- 19.5 31

- 20 - mS

- 0.4 1.0 V

VDS = VGS, ID = 250A

V

= 10V, ID = 8.5A

m

GS

V

= 4.5V, ID = 6A

GS

VDS = 5V, ID = 8.5A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%

7. Repetitive rating, pulse width limited by junction temperature.

8. I

and E

AR

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

rating are based on low frequency and duty cycles to keep Tj=+25°C

AR

t

t

Q
Q

D(on

t

D(off

t

s

d

f

- 478.9 - pF

- 96.7 - pF

- 61.4 - pF

1.1 
5 - nC

- 10.5 - nC

- 1.8 - nC

- 1.6 - nC

- 2.9 - ns

- 7.9 - ns

- 14.6 - ns

- 3.1 - ns

= 16V, VGS = 0V,

V

DS

f = 1MHz

VDS = 0V, VGS = 0V,f = 1MHz

= 10V, VDS = 15V,

V

GS

I

=8.5A

D

V

= 15V, VGS = 10V,

DS

R

= 1.8, RG = 3,

L

DMG4822SSD

Document number: DS35403 Rev. 2 - 2

2 of 7

www.diodes.com

February 2014

© Diodes Incorporated

R

R

N-SOUR

CE O

N

R

T

N

C

NEW PRODUCT



30

25

20

15

10

D

I , DRAIN CURRENT (A)

5

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristic

0.05

R ( ) Ave @ V =3.5V



DS(ON) GS

DMG4822SSD

20

V= 5.0V

DS

15

Ave V (V) @ 150°C

GS

10

D

5

I , DRAIN CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE

Fig.2 Typical Transfer Characteristics

0.04



V = 10V

GS

Ave V (V) @ 125°C

Ave V (V) @ 85°C

GS

Ave V (V) @ 25°C

GS

GS

GS

Ave V ( V) @ 5 5°C

GS



DS(ON)



DS(ON)



@ 85°C



DS(ON)



@ -55°C

DS(ON)



GS D



© Diodes Incorporated

@ 150°C

@ 125°C

@ 25°C

February 2014

0.04

Ave R ( )

0.03

0.03

R ( ) Ave @ V =4.5V



DS(ON) GS

0.02

0.02

R ( ) Ave @ V =10V



DS(ON) GS

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT

D

Fig. 3 Typical On- Resistance vs.

Drain Current and Gate Voltage

1.7

R()



DS(ON)

@ V =10V, I =10A

GS D

1.5

1.3

1.1

(NORMALIZED)

0.9

R()

DS(ON)

@ V =4.5V, I =5A

GS D



0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 5 10 15 20 25 30

I , DRAIN CURRENT

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.06



E ( )

0.05

A

ESIS

0.04

-

0.03

0.02

AI

, D

0.7

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.5

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J



Fig. 5 On-Resistance Variation with Temperature

DMG4822SSD

Document number: DS35403 Rev. 2 - 2

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0.01

DS(ON)

0

- 50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

Ave R ( )

Ave R ( )

DS(ON)

Ave R ( )

Ave R ( )

R()



DS(ON)

@ V =4.5V, I =5A

GS D

R()

DS(ON)

@ V =10V, I =10A