Diodes DMG4800LSD User Manual

Product Summary

I

max

D

9.8A

8.4A

V

(BR)DSS

30V

R

16m @ V

22m @ VGS = 4.5V

DS(on)

max

= 10V

GS

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

SO-8

Top View Pin Configuration

Top View

Internal Schematic

DMG4800LSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 100% avalanche rated part

 Low R

 Low Q

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

- minimizes conduction losses

DS(on)

- minimizes switching losses

g

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.076 grams (approximate)

D

1

G

1

S

1

N-Channel MOSFET N-Channel MOSFET

G

2

e3

D

2

S

2

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMG4800LSD-13 Standard SO-8 2500 / Tape & Reel

DMG4800LSDQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

DMG4800LSD

Document number: DS31858 Rev. 6 - 2

Top View

8 5

G4800LD

YY

WW

1 4

1 of 6

www.diodes.com

Logo

Part no.

Xth week: 01 ~ 53
Year: “10” = 2010
“11” = 2011

March 2013

© Diodes Incorporated

)

g

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current (Note 6) VGS = 10V

State

t<10s

Steady

Continuous Drain Current (Note 6) VGS = 4.5V

State

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7 & 8) L = 0.1mH
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

DMG4800LSD

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

Steady State

t<10s 61

Steady State

t<10s 49

I

D

I

D

I

D

I

D

I

S

I

DM

I

AR

E

AR

T

J, TSTG

P

D

R

JA

P

D

R

JA

R

JC

30 V

±25 V

7.5

6.0

9.8

7.7

6.4

5.0

8.4

6.6

2 A
42 A
17 A
14 mJ

1.17 W
107

1.5 W
83

14.5

-55 to 150 °C

A

A

A

A

°C/W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

30 - - V

- - 1.0 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

R

GS(th

DS(on)

|Y

fs

V

SD

0.8 - 1.6 V

-

|

- 8 - S

- 0.72 0.94 V

12
16

16
22

VDS = VGS, ID = 250A

= 10V, ID = 9A

V

m

GS

VGS = 4.5V, ID = 7A

VDS = 10V, ID = 9A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

8. Applicable to products manufactured with Data Code “1146” (Nov, 2011) and newer.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

DMG4800LSD

Document number: DS31858 Rev. 6 - 2

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 798 - pF

- 128 - pF

- 122 - pF

- 1.37 - 

- 8.56 - nC

- 1.8 - nC

- 2.5 - nC

- 5.03 - ns

- 4.50 - ns

- 26.33 - ns

- 8.55 - ns

2 of 6

V

= 10V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= 5V, VDS = 15V,

V

GS

I

= 9A

D

V

= 15V, V

DD

= 15, RG = 6, ID = 1A

R

L

= 10V,

GEN

March 2013

© Diodes Incorporated