Diodes DMG4800LK3 User Manual
D
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
TO252
Top View
Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate)
D
GS
Top View
Pin-Out
DMG4800LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMG4800LK3-13 TO252 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
N4800L
YYWW
= Manufacturer’s Marking
N4800L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
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November 2012
© Diodes Incorporated
)
g
g
g
g
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 5)
Steady
State
= +25°C
A
T
= +85°C
A
Pulsed Drain Current (Note 6)
Thermal Characteristics
NEW PRODUCT
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C R
Operating and Storage Temperature Range
Characteristic Symbol Value Unit
DMG4800LK3
V
DSS
V
GSS
I
D
I
DM
P
D
θJA
, T
T
J
STG
30 V
±25 V
10.0
6.5
A
48 A
1.71 W
72.9 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
30 - - V
- - 1.0 μA
- - ±100 nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.8 - 1.6 V
-
|
- 10 - S
- 0.7 1.0 V
12
16
17
24
VDS = VGS, ID = 250μA
V
= 10V, ID = 9A
mΩ
GS
VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
C
iss
C
oss
C
rss
R
Q
Q
s
Q
d
t
D(on)
t
t
D(off)
t
f
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-
798
-
128
-
122
-
1.37
-
8.7
-
1.7
-
2.4
-
5.03
-
4.50
-
26.33
-
8.55
-
-
-
-
-
-
-
-
-
-
-
pF
V
= 10V, VGS = 0V,
pF
pF
Ω
nC
nC
nC
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 5V, VDS = 15V,
GS
I
= 9A
D
ns
ns
V
= 15V, VGS = 10V,
ns
DD
= 15Ω, RG = 6Ω, ID = 1A
R
L
ns
November 2012
© Diodes Incorporated
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