Diodes DMG4800LFG User Manual

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Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

TOP VIEW

BOTTOM VIEW

DMG4800LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper lead frame. Solderable

per MIL-STD-202, Method 208

• Polarity: See Diagram

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0172 grams (approximate)

876

234

1

TOP VIEW

Internal Schematic

5

5678

D

GSSS
4321

BOTTOM VIEW

Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3) Steady

State
Pulsed Drain Current (Note 4)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

T

= 25°C

A

T

= 85°C

A

1 of 6

www.diodes.com

V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

DM

D
JA

30 V

±25

7.44

4.82

V
A

40 A

0.94 W
133 °C/W

-55 to +150 °C

November 2009

© Diodes Incorporated

)

g

g

g

g

r

R

CUR

RENT

RAIN CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance

NEW PRODUCT

Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

30

V = 10V

GS

25

V = 4.5V

GS

BV

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C

C

C

R

Q
Q
Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

t

f

DMG4800LFG

30 - - V

- - 1.0

- - ±100 nA

0.8 - 1.5 V

-

|

s
d

- 8 - S

- 0.7 1.0 V

- 798 -

- 128 -

- 122 -

- 1.37 -

- 9.47 -

- 1.87 -

- 5.60 -

- 5.03 -

- 4.50 -

- 26.33 -

- 8.55 -

11
15

17
24

30

V = 5V

25

DS

VGS = 0V, ID = 250A

μA

VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A
V

= 10V, ID = 9A

m

GS

VGS = 4.5V, ID = 7A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A

pF
pF
pF

Ω
nC
nC
nC

= 10V, VGS = 0V,

V

DS

f = 1.0MHz
VDS =0V, VGS = 0V, f = 1MHz
V

= 5V, VDS = 15V,

GS

= 9A

I

D

ns

ns

V

= 15V, V

DD

ns

= 15, RG = 6, ID = 1A

R

L

ns

GEN

= 10V,

(A)

20

V = 3.0V

GS

15

(A)

20

15

AIN

10

D

I, D

V = 2.5V

GS

5

V = 2.0V

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

10

D

I, D

5

0

T = 150°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

2 of 6

www.diodes.com

November 2009

© Diodes Incorporated