Diodes DMG4800LFG User Manual

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Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

TOP VIEW

BOTTOM VIEW

DMG4800LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper lead frame. Solderable

per MIL-STD-202, Method 208

• Polarity: See Diagram

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0172 grams (approximate)

876

234

1

TOP VIEW

Internal Schematic

5

5678

D

GSSS 4321

BOTTOM VIEW

Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Steady

State Pulsed Drain Current (Note 4)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

T

= 25°C

A

T

= 85°C

A

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V V

I

P

R

T

J, TSTG

DSS GSS

I

D

DM

D JA

30 V

±25

7.44

4.82

V A

40 A

0.94 W 133 °C/W

-55 to +150 °C

November 2009

)

g

r

R

CUR

RENT

RAIN CUR

REN

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance

NEW PRODUCT

Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

30

V = 10V

GS

25

V = 4.5V

GS

BV

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y V

C

R

Q Q Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

f

DMG4800LFG

30 - - V

- - 1.0

- - ±100 nA

0.8 - 1.5 V

-

|

s d

- 8 - S

- 0.7 1.0 V

- 798 -

- 128 -

- 122 -

- 1.37 -

- 9.47 -

- 1.87 -

- 5.60 -

- 5.03 -

- 4.50 -

- 26.33 -

- 8.55 -

11 15

17 24

30

V = 5V

25

DS

VGS = 0V, ID = 250A

μA

VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A V

= 10V, ID = 9A

m

GS

VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A

pF pF pF

Ω nC nC nC

= 10V, VGS = 0V,

V

DS

f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz V

= 5V, VDS = 15V,

GS

= 9A

I

D

ns

V

= 15V, V

DD

ns

= 15, RG = 6, ID = 1A

R

L

ns

GEN

= 10V,

(A)

20

V = 3.0V

GS

15

(A)

20

15

AIN

10

D

I, D

V = 2.5V

GS

5

V = 2.0V

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

10

D

I, D

5

0

T = 150°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

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November 2009

R

OUR

CE ON-R

TANC

R

OUR

C

OUR

CE C

U

R

RENT

NEW PRODUCT

DMG4800LFG

0.08

Ω

0.07

0.06

0.05

V = 2.5V

GS

0.04

0.03

0.02

V = 4.5V

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESIST ANCE ( )

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

GS

vs. Drain C urrent and Gate Voltag e

1.8

0.03

Ω

E ( )

ESIS

0.02

V = 4.5V

GS

0.01

AIN-S , D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C urrent an d Temperatu r e

0.03

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Ω

1.6

0.025

E

1.4

0.02

1.2

AIN-S , D

1.0

DSON

V = 4.5V

GS

I = 10A

D

ON-RESISTA NCE (NORMALIZED)

0.8

V = 10V

GS

I = 11.6A

0.6

D

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

1.6

1.2

I = 250µA

D

I = 1mA

D

0.8

0.4

V = 4.5V

GS

I = 10A

0.015

0.01

D

V = 10V

GS

I = 11.6A

D

0.005

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-R esista nce Variatio n w it h Temperat ur e

20

T = 25°C

A

16

(A)

12

8

S

I, S

4

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gat e Threshold V ariation vs. Ambient Temperature

0

0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

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November 2009

C, CAPACITAN

C

F

GAT

OUR

C

OLTAG

GE CUR

REN

T

R

OWER

T

R

T

H

R

TANC

NEW PRODUCT

DMG4800LFG

10,000

)

E (p

10,000

(nA )

1,000

C

iss

C

100

10

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

oss

C

rss

Fig. 9 Typical Total Capacitance

T = 150°C

A

1,000

T = 125°C

A

10

8

E (V)

6

E V

I = 11.6A

D

I = 9A

D

4

E-S

2

GS

V,

0

02 4 6810121416

Q , TOTAL GATE CHARGE (nC)

G

Fig. 10 T otal Gate Charge

100

90

(W)

80 70

Single Pulse

R = 131°C/W

θθJA

R (t) = r(t) *

θ

JA

T - T = P * R (t)

JA JA

R

θ

JA

60

100

50

ANSIENT P

40

T = 85°C

A

10

DSS

I, LEAKA

T = 25°C

1

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 11 Typical Leakag e C ur r ent vs. Dra in - S our ce Voltag e

A

T = -55°C

A

30 20

(pk)

P , PEAK T

10

0

0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

1

Fig. 12 Single Pulse Maximum Power Dissipation

1

E

D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

MAL E

0.01

ANSIEN

r(t),

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

R (t) = r(t) *

θ

JA

R = 131°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001

0.00001 0.001 0.01 0.1 1 10 100 1,000

0.0001 t , PULSE DURATION TIME (s)

1

Fig. 13 Transient Thermal Response

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

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November 2009

Ordering Information (Note 7)

Part Number Case Packaging

DMG4800LFG-7 DFN3030-8 3000/Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

NEW PRODUCT

YYWW

N48

N48 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code 01 to 52

Package Outline Dimensions

A

A1

e

b

E

E2

D2

D

SEATING PLANE

A3

0

2

.

0

R

L

Suggested Pad Layout

X2

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

Z

X1

G

YC

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DFN3030-8

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.02 A3

⎯ ⎯

b 0.29 0.39 0.34 D 2.90 3.10 3.00

D2 2.19 2.39 2.29

e

⎯ ⎯

E 2.90 3.10 3.00

E2 1.64 1.84 1.74

L 0.30 0.60 0.45

All Dimensions in mm

Dimensions Value (in mm)

Z 2.59

G 0.11 X1 2.49 X2 0.65

Y 0.39

C 0.65

0.15

0.65

DMG4800LFG

November 2009

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

NEW PRODUCT

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

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November 2009

Diodes DMG4800LFG User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual