Diodes DMG4712SSS User Manual
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temperature
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
• UIS Tested, R
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Tested
G
Diodes Schottky Integrated MOSFET
Top View
DMG4712SSS
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.072 grams (approximate)
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Maximum Ratings @T
= 25°C unless otherwi se specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. L = 0.1mH, VDD = 0V, RG = 0, rated VDS = 30V, and VGS = 10V.
AR
DMG4712SSS
Document number: DS32040 Rev. 6 - 2
= 25°C (Note 3) R
A
Steady
State
A = 25°C
T
T
A = 85°C
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V
DSS
V
GSS
I
D
I
DM
IAR
E
AR
P
D
JA
T
, T
J
STG
30 V
±12 V
11.2
6.6
A
63 A
30 A
45 mJ
1.55 W
81.3 °C/W
-55 to +150 °C
August 2010
© Diodes Incorporated
)
g
g
g
r
R
C
U
R
RENT
R
N
CUR
REN
T
NEW PRODUCT
Electrical Characteristics @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
C
R
Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q
Q
t
D(on)
Turn-On Rise Time
Turn-Off Delay Time
t
D(off)
Turn-Off Fall Time
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
30
V = 4.5V
GS
25
V = 4.0V
GS
V = 3.5V
GS
V = 2.5V
GS
I
oss
t
t
DSS
fs
SD
S
iss
rss
s
d
f
30 - - V
- - 100
- - ±100 nA
1.0 - 2.2 V
-
|
- 23 - S
- 0.37 0.5 V
10
11
14.0
15.4
- - 5 A -
- 2296 -
- 164 -
- 120 -
- 1.3 -
- 45.7 -
- 19.3 -
- 5.0 -
- 2.9 -
- 5.5 -
- 24.4 -
- 33.1 -
- 6.6 -
30
V = 5V
DS
25
DMG4712SSS
VGS = 0V, ID = 1mA
μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250A
V
= 10V, ID = 11.2A
m
GS
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 11.2A
VGS = 0V, IS = 1A
pF
V
= 15V, VGS = 0V,
DS
pF
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
= 15V, VGS = 10V, ID = 11.2A
V
DS
nC
ns
ns
V
= 10V, VDS = 15V,
GS
ns
= 3, RL = 1.2
R
G
ns
(A)
20
V = 3.0V
GS
15
AIN
10
D
I, D
5
0
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.2V
V = 2.0V
Fig. 1 Typical Output Ch ar acteristic
GS
GS
(A)
20
V = 150°C
AI
D
I, D
15
10
GS
V = 125°C
GS
V = 85°C
GS
5
0
0 1 1.5 2 2.5 3
0.5
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
V = 25°C
GS
V = -55°C
GS
DMG4712SSS
Document number: DS32040 Rev. 6 - 2
2 of 6
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August 2010
© Diodes Incorporated
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