Diodes DMG4710SSS User Manual

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Product Summary

I

max

V

R

(BR)DSS

30V

DS(on)

12.5mΩ @ V

GS

= 10V

14.8mΩ @ VGS= 4.5V

D

TA = 25°C (Note 5)

11.7A

10.8A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

Top View

DMG4710SSS

Features

• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

• Low V

• Low Q

- minimizes conduction losses

DS(ON)

- reducing the losses due to body diode conduction

SD

- lower Qrr of the integrated Schottky reduces body

rr

diode switching losses

• Low gate capacitance (Q

) ratio – reduces risk of shoot-

g/Qgs

through or cross conduction currents at high frequencies

• Avalanche rugged – I

and EAR rated

AR

• Lead Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.072 grams (approximate)

S

S
S
G

Top View

Internal Schematic

D

D
D
D

Ordering Information (Note 3)

Part Number Case Packaging

DMG4710SSS-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG4710SSS

Document number: DS32055 Rev. 6 - 2

8 5

G4710SS

YY

WW

1 4

www.diodes.com

1 of 6

Logo
Part no.

Xth week: 01 ~ 53
Y ear: “09” = 2009
Y ear: “10” = 2010

November 2010

© Diodes Incorporated

)

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwi se specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V

Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range

= 25°C (Note 4) R

A

= 25°C (Note 5) R

A

Steady

State

t ≤ 10 sec
t ≤ 10 sec

A = 25°C

T

A = 85°C

T

A = 25°C

T
T

A = 85°C
A = 25°C

T
T

A = 85°C

DMG4710SSS

V

DSS

V

GSS

I

D

I

D

I

D

I

DM

IAR

E

AR

P

D

θJA

P

D

θJA

T

, T

J

STG

30 V

±12 V

8.8

6.3

11.7

8.5

10.8

7.8

A
A
A

90 A
13 A

25.4 mJ

1.54 W
81 °C/W

2.8 W
45 °C/W

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 0.1 mA

- - ±100 nA

VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V

VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current

V

GS(th

R

DS (ON)

|Y
V

fs

SD

I

S

1.0 - 2.3 V

- 9.5 12.5

- 11.5 14.8

|

- 22 - S

- 0.38 0.6 V

- - 5 A -

VDS = VGS, ID = 250μA

= 10V, ID = 11.7A

V

mΩ

GS

V

= 4.5V, ID = 10.8A

GS

VDS = 5V, ID = 11.7A

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge VGS = 4.5V Qg
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t ≤ 10 sec.

6. Repetitive rating, pulse width limited by junction temperature.
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

7. I

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

Q
Q

t

D(on

t

D(off

s
d

t

t

f

- 1849 - pF

- 158 - pF

- 123 - pF

0.54 2.68 4.82

- 18.5 - nC

- 43 - nC

- 4.7 - nC

- 4.0 - nC

- 6.62 - ns

- 8.73 - ns

- 36.41 - ns

- 4.69 - ns

V

=15V, VGS = 0V,

DS

f = 1.0MHz

Ω

VDS =0V, VGS = 0V, f = 1MHz

V

= 15V, VGS = 10V,

DS

= 11.7A

I

D

V

= 10V, VDS = 10V,

GS

= 3Ω, RL = 1.2Ω

R

G

DMG4710SSS

Document number: DS32055 Rev. 6 - 2

2 of 6

www.diodes.com

November 2010

© Diodes Incorporated