Diodes DMG4511SK4 User Manual

Product Summary

I

V

R

(BR)DSS

35V 35m @ VGS = 10V 13A

-35V 45m @ VGS = -10V -12A

DS(ON)

D

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

Top View

Bottom View

DMG4511SK4

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-4L

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.328 grams (approximate)

D

2

G

2

S

2

N-Channel MOSFE T P-Channel MOSF ET

G

1

D

1

S

1

Ordering Information (Note 3)

Part Number Case Packaging

DMG4511SK4-7 TO252-4L 3000 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

G4511S

YYWW

= Manufacturer’s Marking
G4511S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 – 53)

1 of 9

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July 2011

© Diodes Incorporated

Maximum Ratings – N-CHANNEL, Q1 @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

Steady

State

t  10s

Steady

State

t  10s

Pulsed Drain Current (Note 6)

Maximum Ratings – P-CHANNEL, Q2 @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = -10V

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)

Steady

State

Steady

State

t  10s

Steady

State

t  10s

= 25°C unless otherwise specified

A

V
V

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

= 25°C unless otherwise specified

A

V
V

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

= 70°C

T

A

DSS
GSS

I

I

I

I

I

I

DM

DSS
GSS

I

I

I

I

I

I

DM

DMG4511SK4

D

D

D

D

D

D

D

D

D

D

35 V

±20 V

5.3

4.2

8.6

6.8
13

11

6.3

5.0

9.3

7.4

A

A

A

A

A

50 A

-35 V

±20 V

-5.0

-3.8

-7.8

-6.2

-12

-10

-6.5

-5.2

-9.6

-7.7

A

A

A

A

A

-50 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R
Power Dissipation (Note 5) t  10s
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t  10s R
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

2 of 9

www.diodes.com

P

D

JA

P

D

JA

P

D

JA

, T

T

J

STG

1.54 W

81.3

°C/W

4.1 W

30.8

°C/W

8.9 W
14

°C/W

-55 to +150 °C

July 2011

© Diodes Incorporated

)

g

g

g

r

)

g

g

g

)

r

)

Electrical Characteristics – N-CHANNEL, Q1 @T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

= 25°C unless otherwise specified

A

35 - - V

- - 1.0

μA

- - ±100 nA

1.0 - 3.0 V

-

25
50

35
65

mΩ

- 4.5 - S

- - 1.2 V

- 850 - pF

- 64.7 - pF

- 51.9 - pF

- 1.6 -

Ω

- 18.7 -

- 8.8 -

- 2.6 -

nC

- 2.1 -

- 5.4 - ns

- 2.8 - ns

- 33.2 - ns

- 35.6 - ns

DMG4511SK4

VGS = 0V, ID = 250A
VDS = 35V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 8A

V

GS

VGS = 4.5V, ID = 6A
VDS = 10V, ID = 8A
VGS = 0V, IS = 8A

V

= 25V, VGS = 0V,

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

VGS = 10V, VDS = 28V, ID = 8A
V

= 4.5V, VDS = 28V,

GS

I

= 8A

D

= 18V, VGS = 10V,

V

DS

R

= 18, RG = 3.3,

L

= 1A

I

D

Electrical Characteristics – P-CHANNEL, Q2 @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-35 - - V

- - -1.0

- - ±100 nA

VGS = 0V, ID = -250A

μA

VDS = -35V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.0 - -3.0 V

-

|

- 8 - S

30
40

- -1.2 V

45
65

VDS = VGS, ID = -250A

= -10V, ID = -6A

V

mΩ

GS

VGS = -4.5V, ID = -4A

VDS = -10V, ID = -6A

VGS = 0V, IS = -6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -10V) Qg
Total Gate Charge (VGS = -4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 985.2 - pF

- 90.6 - pF

- 75.3 - pF

- 7.0 -

- 19.2 -

- 9.5 -

- 2.0 -

- 3.5 -

- 5.2 - ns

- 4.8 - ns

- 45.8 - ns

- 29.5 - ns

3 of 9

= -25V, VGS = 0V,

V

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
VGS = -10V, VDS = -28V, ID = -6A

nC

V

= -4.5V, VDS = -28V,

GS

I

= -6A

D

= -18V, VGS = -10V,

V

DS

= 18, RG = 3.3,

R

L

I

= -1A

D

© Diodes Incorporated

July 2011

R

CUR

RENT

R

C

URRENT

R

R

OUR

CE ON-R

TANC

R

R

OUR

CE ON-R

TANC

DMG4511SK4

N-CHANNEL, Q1

30

V = 8.0V

V = 4.5V

GS

V = 4.0V

GS

GS

V = 3.5V

GS

(A)

25

20

15

AIN

10

D

I, D

5

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 3.2V

GS

V = 3.0V

GS

V = 2.8V

GS

Fig. 1 Typica l O ut put Chara ct er istic

0.05

Ω

E ( )

0.04

ESIS

0.03

V = 4.5V

GS

V = 8.0V

GS

0.02

AIN-S

0.01

, D

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G at e Vol t age

1.7

V = 10V

1.5

GS

I = 10A

D

30

V = 5V

DS

25

(A)

20

15

AIN

10

D

I, D

5

0

012345

V , GATE- SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

0.08

Ω

E ( )

0.07

V = 4.5V

GS

0.06

ESIS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

0.05

T = 125°C

A

AIN-S

0.04

0.03

0.02

T = 85°C

A

T = 25°C

A

T = -55°C

A

, D

0.01

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C urrent and Temperature

0.06

Ω

0.05

1.3

1.1

0.9

DSON

R , DRAIN-SOURCE

0.7

ON-RESISTANCE (NORMALIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance V ariation with Temperature

V = 4.5V

GS

I = 5A

D

0.04

V = 4.5V

GS

I = 5A

D

0.03

V = 10V

0.02

GS

I = 10A

D

0.01

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

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© Diodes Incorporated

OUR

CE CUR

REN

T

C, CAPACITANC

F

GE CUR

RENT

T

R

T T

HER

R

TANC

DMG4511SK4

3.0

2.7

2.4

2.1

1.8

1.5

I = 250µA

D

1.2

0.9

0.6

GS(TH)

0.3

V , GATE THRESHOLD VOLT AGE (V)

0

-50 -25 0 25 50 75 100 125 150

Fig. 7 Gat e Threshold V ariation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

A

1,400

1,200

)

1,000

E (p

800

C

iss

f = 1MHz

20
18
16

14

(A)

T = 25°C

A

12
10

8
6

S

I, S

4
2

0

0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

10,000

(nA )

1,000

T = 150°C

A

T = 125°C

A

100

600

T = 85°C

A

400

200

C

oss

C

rss

0

0 5 10 15 20 25 30 35

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typica l Total Capacitance

10

DSS

I , LEAKA

1

5101520253035

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Leakage Current

vs. Drain-S ource Voltage

T = 25°C

A

1

E

D = 0.7

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001

0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

D = 0.9

R (t) = r(t) *

θ

JA

R = 80°C/W

P(pk)

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

1

R

JA

t

θθJA

1

t

2

Fig. 11 Transient Thermal Response

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

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July 2011

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R

CUR

RENT

RAIN CUR

REN

T

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN

O

U

R

CE O

N

R

T

N

C

DMG4511SK4

P-CHANNEL, Q2

30

V = -8.0V

GS

25

(A)

20

15

AIN

10

D

-I , D
5

V = -2.8V

0

0 0.5 1 1.5 2

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 Typical Output Characteristic

0.08

Ω

E ( )

0.07

GS

0.06

ESIS

0.05

V = -4.5V

0.04

0.03

GS

V = -8.0V

GS

0.02

, D

0.01

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 14 Typical On-Resistance

vs. Drain C urrent and G ate V ol tage

1.7

1.5

1.3

1.1

V = -10V

GS

I = -10A

D

0.9

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.7

0.5

V = -4.5V

GS

I = -5A

D

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 16 On-Resistance Variation with Temperature

V = -4.5V

GS

V = -4.0V

GS

V = -3.5V

GS

V = -3.2V

GS

V = -3.0V

GS

30

25

(A)

20

15

10

D

-I , D
5

0

012345

0.10

Ω

T = 150°C

A

T = 125°C

A

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 13 Typical Transfer Characteristic

T = 85°C

A

T = 25°C

A

T = -55°C

A

E ( )

0.08

ESIS

0.06

0.04

0.02

, D

DS(ON)

0

0 5 10 15 20 25 30

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

-I , DRAIN CURRENT (A)

D

Fig. 15 Typical On-Resistan ce

vs. Drain C urrent and Temperature

0.10

Ω

0.09

E ( )

0.08

A

0.07

ESIS

-

0.06

V = -4.5V

0.05

GS

I = -5A

D

0.04

-S

0.03

0.02

, D

0.01

DSON

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

Fig. 17 On-Resistance V ariation with Temperature

A

V = -10V

GS

I = -10A

D

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

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July 2011

© Diodes Incorporated

OUR

CE CUR

RENT

C, TOT

CAPACITANC

F

GE CUR

RENT

T

R

T

T

HER

R

TANC

DMG4511SK4

3.0

2.7

2.4

2.1

1.8

1.5

I = -250µA

D

1.2

0.9

0.6

GS(TH)

0.3

-V , GATE THRESHOLD VOLTAGE (V)
0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 18 Gat e Threshold Varia t ion vs. Ambien t Temperatur e

1,400

20
18
16

(A)

14
12

T = 25°C

A

10

8
6

S

-I , S
4

2
0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 19 Diode Forward Voltage vs. Current

10,000

f = 1MHz

(nA)

1,000

T = 150°C

A

T = 125°C

A

)

E (p

1,200

1,000

800

C

iss

100

600

AL

400

T

C

200

0

oss

C

rss

0 5 10 15 20 25 30 35

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 20 Typical Total Capacitance

10

DSS

-I , LEAKA

1

5101520253035

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 21 Typical Leakage Current vs. Drain-Source Voltage

T = 85°C

A

T = 25°C

A

1

E

D = 0.7

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)

1

D = 0.9

R (t) = r(t) *

θ

JA

R = 80°C/W

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA

Duty Cycle, D = t /t

R

θ

JA

θ

12

Fig. 22 T ransient Thermal Response

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

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© Diodes Incorporated

Package Outline Dimensions

4X b2

E

b3

L3

D

L4

e

5X b

Suggested Pad Layout

Y1

X1

c1

X (4x)

DMG4511SK4

TO252-4L

Dim Min Max Typ

A

c2

A2

H

A1

L

a

Y2

Y3

Y

c

E1

Dimensions Value (in mm)

c 1.27

c1 2.54

X 1.00

X1 5.73

Y 2.00
Y1 6.17
Y2 1.64
Y3 2.66

A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07

b 0.51 0.71 0.583
b2 0.61 0.79 0.70
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531

D 6.00 6.20 6.10

D1 5.21

e

E 6.45 6.70 6.58

E1 4.32

H 9.40 10.41 9.91

L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83

a 0° 10°

All Dimensions in mm

− −

− −

1.27

− −

−

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

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July 2011

© Diodes Incorporated

IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.

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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
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noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

DMG4511SK4

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

9 of 9

www.diodes.com

July 2011

© Diodes Incorporated