Diodes DMG4511SK4 User Manual

Product Summary

I

V

R

(BR)DSS

35V 35m @ VGS = 10V 13A

-35V 45m @ VGS = -10V -12A

DS(ON)

D

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

Top View

Bottom View

DMG4511SK4

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-4L

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.328 grams (approximate)

D

2

G

2

S

2

N-Channel MOSFE T P-Channel MOSF ET

G

1

D

1

S

1

Ordering Information (Note 3)

Part Number Case Packaging

DMG4511SK4-7 TO252-4L 3000 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

G4511S

YYWW

= Manufacturer’s Marking
G4511S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 – 53)

1 of 9

www.diodes.com

July 2011

© Diodes Incorporated

Maximum Ratings – N-CHANNEL, Q1 @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

Steady

State

t  10s

Steady

State

t  10s

Pulsed Drain Current (Note 6)

Maximum Ratings – P-CHANNEL, Q2 @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = -10V

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -10V

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)

Steady

State

Steady

State

t  10s

Steady

State

t  10s

= 25°C unless otherwise specified

A

V
V

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

T

= 70°C

A

= 25°C unless otherwise specified

A

V
V

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

= 25°C

T

A

= 70°C

T

A

DSS
GSS

I

I

I

I

I

I

DM

DSS
GSS

I

I

I

I

I

I

DM

DMG4511SK4

D

D

D

D

D

D

D

D

D

D

35 V

±20 V

5.3

4.2

8.6

6.8
13

11

6.3

5.0

9.3

7.4

A

A

A

A

A

50 A

-35 V

±20 V

-5.0

-3.8

-7.8

-6.2

-12

-10

-6.5

-5.2

-9.6

-7.7

A

A

A

A

A

-50 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R
Power Dissipation (Note 5) t  10s
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t  10s R
Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

2 of 9

www.diodes.com

P

D

JA

P

D

JA

P

D

JA

, T

T

J

STG

1.54 W

81.3

°C/W

4.1 W

30.8

°C/W

8.9 W
14

°C/W

-55 to +150 °C

July 2011

© Diodes Incorporated

)

g

g

g

r

)

g

g

g

)

r

)

Electrical Characteristics – N-CHANNEL, Q1 @T

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Characteristic Symbol Min Typ Max Unit Test Condition

BV

DSS

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R

Q

s

Q

d

t

D(on)

t

t

D(off)

t

f

= 25°C unless otherwise specified

A

35 - - V

- - 1.0

μA

- - ±100 nA

1.0 - 3.0 V

-

25
50

35
65

mΩ

- 4.5 - S

- - 1.2 V

- 850 - pF

- 64.7 - pF

- 51.9 - pF

- 1.6 -

Ω

- 18.7 -

- 8.8 -

- 2.6 -

nC

- 2.1 -

- 5.4 - ns

- 2.8 - ns

- 33.2 - ns

- 35.6 - ns

DMG4511SK4

VGS = 0V, ID = 250A
VDS = 35V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 8A

V

GS

VGS = 4.5V, ID = 6A
VDS = 10V, ID = 8A
VGS = 0V, IS = 8A

V

= 25V, VGS = 0V,

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

VGS = 10V, VDS = 28V, ID = 8A
V

= 4.5V, VDS = 28V,

GS

I

= 8A

D

= 18V, VGS = 10V,

V

DS

R

= 18, RG = 3.3,

L

= 1A

I

D

Electrical Characteristics – P-CHANNEL, Q2 @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-35 - - V

- - -1.0

- - ±100 nA

VGS = 0V, ID = -250A

μA

VDS = -35V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.0 - -3.0 V

-

|

- 8 - S

30
40

- -1.2 V

45
65

VDS = VGS, ID = -250A

= -10V, ID = -6A

V

mΩ

GS

VGS = -4.5V, ID = -4A

VDS = -10V, ID = -6A

VGS = 0V, IS = -6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -10V) Qg
Total Gate Charge (VGS = -4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMG4511SK4

Document number: DS32042 Rev. 4 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 985.2 - pF

- 90.6 - pF

- 75.3 - pF

- 7.0 -

- 19.2 -

- 9.5 -

- 2.0 -

- 3.5 -

- 5.2 - ns

- 4.8 - ns

- 45.8 - ns

- 29.5 - ns

3 of 9

= -25V, VGS = 0V,

V

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz
VGS = -10V, VDS = -28V, ID = -6A

nC

V

= -4.5V, VDS = -28V,

GS

I

= -6A

D

= -18V, VGS = -10V,

V

DS

= 18, RG = 3.3,

R

L

I

= -1A

D

© Diodes Incorporated

July 2011