Diodes DMG4496SSS User Manual

DMG4496SSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

30V

max

R

DS(ON)

21.5m @ V

29m @ VGS = 4.5V

= 10V

GS

I

TA = +25°C

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Backlighting

NEW PRODUCT

 Power Management Functions

 DC-DC Converters

SO-8

Top View

D

10A

S

S

G

max

8A

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

 Weight: 0.074 grams (approximate)

Top View

Internal Schematic

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

DS

D

D

G

D

Equivalent circuit

e3

D

S

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMG4496SSS-13 Standard SO-8 2500 / Tape & Reel

DMG4496SSSQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMG4496SSS

Document number: DS32048 Rev. 5 - 2

8 5

G4496SS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

G4496SS

YY

WW

1 4

= Manufacturer’s Marking
G4496SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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September 2013

© Diodes Incorporated

DMG4496SSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6)

Steady

State

Pulsed Drain Current (Note 7)

Avalanche Current (Notes 7 & 8)

Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH

T

= +25°C

A

= +85°C

T

A

V

DSS

V

GSS

I

D

I

DM

I

AR

E

AR

30 V

±25 V

10

6

60 A

8 A

3.2 mJ

Thermal Characteristics

NEW PRODUCT

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient @T

Operating and Storage Temperature Range

= +25°C (Note 6) R

A

P

D

JA

T

, T

J

STG

1.42 W

88.49 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30

— —

— —

—

±100 nA

— V

1 A

VGS = 0V, ID = 250A

VDS = 30V, VGS = 0V

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

R

DS(ON)

|Y

V

GS(th)

SD

0.8 1.2 2.0 V

—

—

|

fs

—

16
22

11.7 — S

0.70 1 V

21.5
29

VDS = VGS, ID = 250A

= 10V, ID = 10A

V

m

GS

VGS = 4.5V, ID = 7.5A

VDS = 5V, ID = 10A

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 6. Device mounted on 1 in.2 FR-4 board with 2oz. Copper, in a still air environment @ TA = +25°C. The value in any given application depends on the
user's specific board design.

7. Repetitive rating, pulse width limited by junction temperature.

8. I

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

AR

t

t

Q

gs

Q

gd

D(on)

t

r

D(off)

t

f

—

—

—

—

—

—

—

—

—

—

—

—

493.5

94.5

50.4

2.86

4.7

10.2

1.4

1.7

4.76

3.64

19.5

4.9

g

—

—

—

—

—

—

—

—

—

—

—

—

pF

VDS =15V, VGS = 0V,

pF

f = 1.0MHz

pF



VDS =0V, VGS = 0V, f = 1MHz

VDS = 15V, VGS = 4.5V, ID =10A

nC

nC

V

= 15V, VGS = 10V, ID =10A

DS

nC

ns

ns

ns

= 10V, VDs = 15V,

V

GS

= 6, RL = 15,

R

G

ns

DMG4496SSS

Document number: DS32048 Rev. 5 - 2

2 of 6

www.diodes.com

A

September 2013

© Diodes Incorporated