Diodes DMG4468LFG User Manual

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Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

TOP VIEW

BOTTOM VIEW

DMG4468LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0172 grams (approximate)

876

234

1

TOP VIEW

Internal Schematic

5

5678

D

GSSS
4321

BOTTOM VIEW

Pin Configuration

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)

Steady

State

T

= 25°C

A

= 85°C

T

A

V
V

DSS
GSS

I

I

DM

D

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

P

D

R

θJA

T

, T

J

STG

30 V

±20 V

7.62

4.83

A

45.9 A

0.99 W

126.7 °C/W

-55 to +150 °C

DMG4468LFG

Document number: DS31857 Rev. 2 - 2

1 of 6

www.diodes.com

October 2009

© Diodes Incorporated

)

g

g

g

g

r

R

N

C

U

R

REN

T

RAIN CUR

R

N

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance

NEW PRODUCT

Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

50

V = 10V

GS

V = 4.5V

40

GS

(A)

30

BV

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y
V

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

DSS

fs

SD

iss

oss

rss

t

t

f

DMG4468LFG

30 - - V

- - 1.0 μA

- - ±100 nA

1.0 - 2.0 V

-

|

s
d

- 8 - S

- 0.7 1.0 V

-

-

-

-

-

-

-

-

-

-

-

10
17

867

85
81

1.39

18.85

2.59

6.15

5.46

14.53

18.84

6.01

15

23.5

-

-

-

-

-

-

-

-

-

-

-

30

25

(A)

20

V = 5V

DS

E

VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 11.6A

V

mΩ

GS

VGS = 4.5V, ID = 10A
VDS = 10V, ID = 9A
VGS = 0V, IS = 1A

pF
pF
pF

Ω
nC
nC
nC
ns
ns
ns
ns

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

= 0V, VGS = 0V, f = 1MHz

V

DS

= 10V, VDS = 15V,

V

GS

I

= 11.6A

D

= 15V, VGS = 10V,

V

DD

= 1.3Ω, RG = 3Ω,

R

L

I

= 1A

D

20

AI

D

I, D

V = 3.0V

GS

10

V = 2.5V

GS

V = 2.2V

0

012345

V , DRAIN-SOURCE VOL TAGE (V )

DS

GS

Fig. 1 Typical Output C har acteristic

15

10

D

I, D

T = 150°C

5

0

01234

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

DMG4468LFG

Document number: DS31857 Rev. 2 - 2

2 of 6

www.diodes.com

October 2009

© Diodes Incorporated