Diodes DMG4466SSSL User Manual
DMG4466SSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
I
max
D
V
(BR)DSS
30V
R
23m @ V
33m @ VGS = 4.5V
DS(ON)
max
= 10V
GS
TA = +25°C
10A
8A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
SO-8
Top View
S
S
G
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Low Gate Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Weight: 0.074 grams (approximate)
Top View
Internal Schematic
UL Flammability Classification Rating 94V-0
Solderable per MIL-STD-202, Method 208
DS
D
D
G
D
Equivalent circuit
e3
D
S
Ordering Information (Note 4)
Part Number Case Packaging
DMG4466SSSL-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8 5
G4466SS
WW
YY
1 4
Chengdu A/T Site Shanghai A/T Site
8 5
G4466SS
YY
WW
1 4
= Manufacturer’s Marking
G4466SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMG4466SSSL
Document number: DS32244 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Pulsed Drain Current (Note 5)
Avalanche Current (Notes 6)
Repetitive Avalanche Energy (Notes 6) L = 0.1mH
T
= +25°C
A
= +85°C
T
A
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AR
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30
— —
— —
—
±100 nA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
R
DS (ON)
|Y
V
SD
1.0 1.45 2.4 V
—
15
25
—
|
fs
—
2.5 — S
0.69 1 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Q
Q
t
D(on)
t
D(off)
gs
gd
t
r
t
f
—
—
—
—
—
—
—
—
—
—
—
478.9
96.7
61.4
5.0 8
10.5 17
1.8
1.6
2.9
7.9
14.6
3.1
0.4 1.1 1.6
g
DMG4466SSSL
Document number: DS32244 Rev. 3 - 2
2 of 6
www.diodes.com
30 V
±20 V
10
6
60 A
16 A
12.8 mJ
1.42 W
88.4 °C/W
-55 to +150 °C
— V
1 A
VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250A
23
33
V
m
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
—
—
—
pF
VDS = 15V, VGS = 0V,
pF
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
—
—
—
—
—
—
nC
nC
ns
ns
ns
ns
V
V
R
DMG4466SSSL
A
= 10V, ID = 10A
GS
= 15V, VGS = 10V, ID = 10A
DS
= 10V, VDS = 15V,
GS
= 3, RL = 1.5
G
September 2013
© Diodes Incorporated
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