Diodes DMG4435SSS User Manual

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Product Summary

(BR)DSS

-30V

16m @ V 20m @ VGS = -10V

DS(on) max

= -20V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power management functions

 Backlighting

NEW PRODUCT

SO-8

Top View

-7.3A

-6.0A

Internal Schematic

DMG4435SSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Top View

Equivalent circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMG4435SSS-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

8 5

G4435SS

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

G4435SS

1 4

= Manufacturer’s Marking G4435SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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September 2013

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -20

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @TA = +25°C

NEW PRODUCT

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C

Steady State

t < 10s

= +70°C

= +25°C

= +70°C

= +25°C

= +70°C

Steady state

t < 10s 55 °C/W

= +25°C, unless otherwise specified.)

DMG4435SSS

DSS

GSS

θJA

, T

STG

-30 V

±25 V

-7.3

-5.7

-10

-7.5

-80 A

2.5 W

1.5 W

96.5 °C/W

-55 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

DSS

GSS

DSS

-30

— — -1.0 µA

— —

—

— V

±100 nA

VGS = 0V, ID = -1mA

VDS = -30V, VGS = 0V

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

GS(th)

DS (ON)

-1.0 -1.7 -2.5 V

13 16

—

15 20

21 29

— 22 — S

—

-0.74 -1.0 V

VDS = VGS, ID = -250μA

= -20V, ID = -11A

mΩ

= -10V, ID = -10A

= -5V, ID = -5A

VDS = -5V, ID = -10A

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge at 10V

Total Gate Charge at 5V

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the user’s specific board design.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

D(on)

D(off)

iss

oss

rss

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

— 1614 — pF

—

— 35.4 — nC

—

— 5.7 — nC

—

— 44.9 — ns

—

226

214

6.8

18.9

4.6

8.6

12.7

22.8

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= -15V, VGS = 0V,

—

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

VGS = -10V, VDS = -15V, ID = -10A

—

= -5V, VDS = -15V,

= -10A

= -15V, VGS = -10V,

= 1.5Ω, R

GEN

= 3Ω,

September 2013

CUR

RENT

CUR

RENT

OUR

CE ON-R

TANC

RAIN-SOUR

CE O

N-R

TAN

OUR

NEW PRODUCT

V = -10V

(A)

AIN

-I , D

V = -4.5V

V = -4.0V

V = -3.5V

V = -3.0V

V = -2.2V

0 0.5 1 1.5 2

-V , DRAIN-SOURCE VOLTAGE (V)

V = -2.5V

Fig. 1 Typical Output Characteristic

0.05



E ( )

0.04

V = -5V

(A)

AIN

-I , D

T = 150°C

T = 125°C

0 0.5 1 1.5 2 2.5 3 3.5 4

-V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristic

0.06



E ( )

0.05

V = -4.5V

DMG4435SSS

T = 85°C

T = 25°C

T = -55°C

ESIS

0.03

V = -4.5V

0.02

AIN-S

0.01

, D

DS(ON)

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

V = -10V

vs. Drain Current and Gate Voltage

1.6

1.4

V = -4.5V

I = -10A

1.2

V = -10V

I = -20A

1.0

DSON

R , DRAIN-SOURCE

0.8

ON-RESISTANCE (NORMALIZED)

ESIS

0.04

0.03

0.02

, D

0.01

DS(ON)

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0.04

0.03

V = -4.5V

I = -10A

0.02

AIN-S

, D

DSON

0.01

V = -10V

I = -20A

ON-RESISTANCE (NORMALIZED)

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0.6

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

OUR

CUR

GE CUR

RENT

NEW PRODUCT

DMG4435SSS

3.0

2.5

(A)

2.0

I = -1mA

1.5

I = -250µA

1.0

0.5

GS(TH)

-V , GATE THRESHOLD VOLTAGE (V) 0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

10,000

1,000

iss

oss

rss

f = 1MHz

T = 25°C

-I , S 5

0 0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

10,000

T = 150°C

1,000

(µA)

100

T = 125°C

T = 85°C

100

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Total Capacitance

DSS

-I , LEAKA

0.1 0102030

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

T = 25°C

GS(TH)

V , GATE-THRESHOLD VOLTAGE (V)

0 5 10 15 20 25 30 35 40

Q , TOTAL GATE CHARGE (nC)

Fig. 11 Gate Threshold Voltage vs. Total Gate Charge

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

T T

HER

TANC

DMG4435SSS

D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

MAL

0.01

ANSIEN

r(t),

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Sin gle Pulse

D = 0.9

R (t) = r(t) *



R = 98°C/W

P(pk)

T - T = P * R (t)

JA JA12

Duty Cycle, D = t /t

JA

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

Fig. 12 Transient Thermal Response

NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Dim Min Max

Detail ‘A’

0.254 Gauge Plane

Seating Plane

7°~9

Detail ‘A’

SO-8

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ h - 0.35 L 0.62 0.82

0 8



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

Dimensions Value (in mm)

X 0.60 Y 1.55

C1 5.4 C2 1.27

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

NEW PRODUCT

final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMG4435SSS

Document number: DS32041 Rev. 5 - 2

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September 2013

Diodes DMG4435SSS User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual