Diodes DMG4435SSS User Manual
Product Summary
V
R
(BR)DSS
-30V
16m @ V
20m @ VGS = -10V
DS(on) max
= -20V
GS
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
DC-DC Converters
Power management functions
Backlighting
NEW PRODUCT
SO-8
S
S
G
Top View
I
D
-7.3A
-6.0A
Internal Schematic
DMG4435SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
e3
D
DS
D
D
G
D
S
Top View
Equivalent circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMG4435SSS-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
8 5
G4435SS
WW
YY
1 4
Chengdu A/T Site Shanghai A/T Site
8 5
G4435SS
YY
WW
1 4
= Manufacturer’s Marking
G4435SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
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September 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -20
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C
NEW PRODUCT
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C
T
Steady State
t < 10s
A
= +70°C
T
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
Steady state
t < 10s 55 °C/W
= +25°C, unless otherwise specified.)
A
DMG4435SSS
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
R
θJA
T
, T
J
STG
-30 V
±25 V
-7.3
-5.7
-10
-7.5
A
A
-80 A
2.5 W
1.5 W
96.5 °C/W
-55 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-30
— — -1.0 µA
— —
—
— V
±100 nA
VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
R
DS (ON)
|Y
V
fs
SD
-1.0 -1.7 -2.5 V
13 16
—
15 20
21 29
— 22 — S
|
—
-0.74 -1.0 V
VDS = VGS, ID = -250μA
V
= -20V, ID = -11A
GS
mΩ
V
= -10V, ID = -10A
GS
V
= -5V, ID = -5A
GS
VDS = -5V, ID = -10A
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and the testing is based on the t<10s. The value in any given application depends on the
user’s specific board design.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
C
R
Q
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
g
g
gs
r
f
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
— 1614 — pF
—
—
—
— 35.4 — nC
—
—
— 5.7 — nC
—
—
— 44.9 — ns
—
226
214
6.8
18.9
4.6
8.6
12.7
22.8
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V
= -15V, VGS = 0V,
—
—
pF
pF
—
DS
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -10V, VDS = -15V, ID = -10A
—
—
—
—
—
nC
nC
ns
ns
ns
V
= -5V, VDS = -15V,
GS
= -10A
I
D
= -15V, VGS = -10V,
V
DS
= 1.5Ω, R
R
L
GEN
= 3Ω,
September 2013
© Diodes Incorporated
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